JP7848431B2 - イメージセンサー - Google Patents
イメージセンサーInfo
- Publication number
- JP7848431B2 JP7848431B2 JP2022050432A JP2022050432A JP7848431B2 JP 7848431 B2 JP7848431 B2 JP 7848431B2 JP 2022050432 A JP2022050432 A JP 2022050432A JP 2022050432 A JP2022050432 A JP 2022050432A JP 7848431 B2 JP7848431 B2 JP 7848431B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- separation structure
- pattern
- image sensor
- liner pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
- H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/804—Containers or encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/809—Constructional details of image sensors of hybrid image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2021-0039457 | 2021-03-26 | ||
| KR1020210039457A KR102905743B1 (ko) | 2021-03-26 | 2021-03-26 | 이미지 센서 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022151861A JP2022151861A (ja) | 2022-10-07 |
| JP2022151861A5 JP2022151861A5 (https=) | 2025-02-12 |
| JP7848431B2 true JP7848431B2 (ja) | 2026-04-21 |
Family
ID=83363639
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022050432A Active JP7848431B2 (ja) | 2021-03-26 | 2022-03-25 | イメージセンサー |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US12237353B2 (https=) |
| JP (1) | JP7848431B2 (https=) |
| KR (2) | KR102905743B1 (https=) |
| CN (1) | CN115132766A (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20230060051A (ko) * | 2021-10-27 | 2023-05-04 | 삼성전자주식회사 | 이미지 센서 및 이의 제조방법 |
| KR20240145648A (ko) * | 2023-03-28 | 2024-10-07 | 에스케이하이닉스 주식회사 | 이미지 센싱 장치 |
| CN116247069B (zh) * | 2023-05-09 | 2023-07-25 | 合肥新晶集成电路有限公司 | 半导体结构及其制备方法、背照式图像传感器 |
| US12598831B2 (en) | 2023-05-17 | 2026-04-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pixel shielding using air gaps |
| CN117790523B (zh) * | 2024-02-23 | 2024-05-17 | 合肥晶合集成电路股份有限公司 | 一种图像传感器及其制作方法 |
| CN119230576B (zh) * | 2024-12-03 | 2025-03-25 | 合肥晶合集成电路股份有限公司 | 背照式图像传感器及其制备方法、电子设备 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120153127A1 (en) | 2010-12-21 | 2012-06-21 | Stmicroelectronics Sa | Image sensor with reduced crosstalk |
| US20140246707A1 (en) | 2013-03-04 | 2014-09-04 | Samsung Electronics Co., Ltd. | Image Sensors Including Conductive Pixel Separation Structures |
| US20190140006A1 (en) | 2017-11-09 | 2019-05-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor device and method for forming the same |
| US20200219911A1 (en) | 2019-01-09 | 2020-07-09 | Samsung Electronics Co., Ltd. | Image sensors |
| US20200403014A1 (en) | 2015-01-13 | 2020-12-24 | Samsung Electronics Co., Ltd. | Image sensors and methods of forming the same |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100670606B1 (ko) | 2005-08-26 | 2007-01-17 | (주)이엠엘에스아이 | 크로스 토크를 감소시키는 이미지 센서의 소자 분리 구조체및 그 제조방법 |
| JP5794068B2 (ja) | 2011-09-16 | 2015-10-14 | ソニー株式会社 | 固体撮像素子および製造方法、並びに電子機器 |
| US8853811B2 (en) | 2011-11-07 | 2014-10-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Image sensor trench isolation with conformal doping |
| US9054007B2 (en) | 2013-08-15 | 2015-06-09 | Omnivision Technologies, Inc. | Image sensor pixel cell with switched deep trench isolation structure |
| KR102366416B1 (ko) | 2014-08-11 | 2022-02-23 | 삼성전자주식회사 | Cmos 이미지 센서 |
| JP2016187007A (ja) | 2015-03-27 | 2016-10-27 | 株式会社東芝 | 固体撮像装置および固体撮像装置の製造方法 |
| CN107039468B (zh) | 2015-08-06 | 2020-10-23 | 联华电子股份有限公司 | 影像感测器及其制作方法 |
| US9704904B2 (en) | 2015-08-27 | 2017-07-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Deep trench isolation structures and methods of forming same |
| US9761624B2 (en) | 2016-02-09 | 2017-09-12 | Semiconductor Components Industries, Llc | Pixels for high performance image sensor |
| US10700114B2 (en) | 2016-04-25 | 2020-06-30 | Sony Corporation | Solid-state imaging element, method for manufacturing the same, and electronic apparatus |
| US10498947B2 (en) | 2017-10-30 | 2019-12-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor including light shielding layer and patterned dielectric layer |
| US10461109B2 (en) | 2017-11-27 | 2019-10-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multiple deep trench isolation (MDTI) structure for CMOS image sensor |
| JP2019165136A (ja) | 2018-03-20 | 2019-09-26 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置およびその製造方法、並びに電子機器 |
| KR102674895B1 (ko) * | 2018-10-08 | 2024-06-14 | 삼성전자주식회사 | 이미지 센서 및 이의 제조 방법 |
| KR102662233B1 (ko) | 2019-02-28 | 2024-05-02 | 삼성전자주식회사 | 이미지 센서 |
| CN110085613A (zh) | 2019-04-30 | 2019-08-02 | 德淮半导体有限公司 | 图像传感器及其形成方法 |
| US11670661B2 (en) * | 2019-12-20 | 2023-06-06 | Samsung Electronics Co., Ltd. | Image sensor and method of fabricating same |
| US12027554B2 (en) * | 2021-01-08 | 2024-07-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Composite deep trench isolation structure in an image sensor |
| KR102901404B1 (ko) * | 2021-01-22 | 2025-12-18 | 삼성전자주식회사 | 이미지 센서 및 이의 제조 방법 |
-
2021
- 2021-03-26 KR KR1020210039457A patent/KR102905743B1/ko active Active
-
2022
- 2022-02-07 CN CN202210116471.3A patent/CN115132766A/zh active Pending
- 2022-02-09 US US17/667,962 patent/US12237353B2/en active Active
- 2022-03-25 JP JP2022050432A patent/JP7848431B2/ja active Active
- 2022-05-09 US US17/739,682 patent/US12550470B2/en active Active
- 2022-05-20 KR KR1020220062002A patent/KR102905744B1/ko active Active
-
2025
- 2025-11-18 US US19/392,482 patent/US20260075975A1/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120153127A1 (en) | 2010-12-21 | 2012-06-21 | Stmicroelectronics Sa | Image sensor with reduced crosstalk |
| US20140246707A1 (en) | 2013-03-04 | 2014-09-04 | Samsung Electronics Co., Ltd. | Image Sensors Including Conductive Pixel Separation Structures |
| US20200403014A1 (en) | 2015-01-13 | 2020-12-24 | Samsung Electronics Co., Ltd. | Image sensors and methods of forming the same |
| US20190140006A1 (en) | 2017-11-09 | 2019-05-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor device and method for forming the same |
| US20200219911A1 (en) | 2019-01-09 | 2020-07-09 | Samsung Electronics Co., Ltd. | Image sensors |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115132766A (zh) | 2022-09-30 |
| KR102905744B1 (ko) | 2025-12-31 |
| TW202238979A (zh) | 2022-10-01 |
| US12237353B2 (en) | 2025-02-25 |
| US20220310676A1 (en) | 2022-09-29 |
| KR20220134158A (ko) | 2022-10-05 |
| JP2022151861A (ja) | 2022-10-07 |
| KR102905743B1 (ko) | 2025-12-31 |
| KR20220134488A (ko) | 2022-10-05 |
| US20220310675A1 (en) | 2022-09-29 |
| US12550470B2 (en) | 2026-02-10 |
| US20260075975A1 (en) | 2026-03-12 |
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