JP7823022B2 - 撮像素子及び撮像装置 - Google Patents

撮像素子及び撮像装置

Info

Publication number
JP7823022B2
JP7823022B2 JP2023508712A JP2023508712A JP7823022B2 JP 7823022 B2 JP7823022 B2 JP 7823022B2 JP 2023508712 A JP2023508712 A JP 2023508712A JP 2023508712 A JP2023508712 A JP 2023508712A JP 7823022 B2 JP7823022 B2 JP 7823022B2
Authority
JP
Japan
Prior art keywords
photoelectric conversion
unit
conversion units
pixel
units
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023508712A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2022201839A1 (https=
Inventor
哲士 岡崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of JPWO2022201839A1 publication Critical patent/JPWO2022201839A1/ja
Application granted granted Critical
Publication of JP7823022B2 publication Critical patent/JP7823022B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2023508712A 2021-03-24 2022-01-27 撮像素子及び撮像装置 Active JP7823022B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021050710 2021-03-24
JP2021050710 2021-03-24
PCT/JP2022/002999 WO2022201839A1 (ja) 2021-03-24 2022-01-27 撮像素子及び撮像装置

Publications (2)

Publication Number Publication Date
JPWO2022201839A1 JPWO2022201839A1 (https=) 2022-09-29
JP7823022B2 true JP7823022B2 (ja) 2026-03-03

Family

ID=83395354

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023508712A Active JP7823022B2 (ja) 2021-03-24 2022-01-27 撮像素子及び撮像装置

Country Status (5)

Country Link
US (1) US20240113148A1 (https=)
JP (1) JP7823022B2 (https=)
KR (1) KR20230157329A (https=)
DE (1) DE112022001705T5 (https=)
WO (1) WO2022201839A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202512482A (zh) * 2023-09-07 2025-03-16 日商索尼半導體解決方案公司 攝像元件、及攝像裝置及電子機器
US20250318293A1 (en) * 2024-04-09 2025-10-09 Sony Semiconductor Solutions Corporation Imaging sensor and device with gate controlled isolation between shared pixels

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013041890A (ja) 2011-08-11 2013-02-28 Canon Inc 撮像素子及び撮像装置
JP2013161868A (ja) 2012-02-02 2013-08-19 Sony Corp 固体撮像装置、固体撮像装置の製造方法、及び、電子機器
JP2014112580A (ja) 2012-12-05 2014-06-19 Sony Corp 固体撮像素子および駆動方法
JP2014525673A (ja) 2011-08-26 2014-09-29 イー・２・ブイ・セミコンダクターズ ピクセル・グループ化イメージ・センサー
JP2015012127A (ja) 2013-06-28 2015-01-19 ソニー株式会社 固体撮像素子および電子機器
WO2018143306A1 (ja) 2017-01-31 2018-08-09 株式会社ニコン 撮像素子および電子カメラ
JP2020141146A (ja) 2020-05-26 2020-09-03 ソニーセミコンダクタソリューションズ株式会社 撮像装置
WO2020241717A1 (ja) 2019-05-31 2020-12-03 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6369233B2 (ja) 2014-09-01 2018-08-08 ソニー株式会社 固体撮像素子及びその信号処理方法、並びに電子機器

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013041890A (ja) 2011-08-11 2013-02-28 Canon Inc 撮像素子及び撮像装置
JP2014525673A (ja) 2011-08-26 2014-09-29 イー・２・ブイ・セミコンダクターズ ピクセル・グループ化イメージ・センサー
JP2013161868A (ja) 2012-02-02 2013-08-19 Sony Corp 固体撮像装置、固体撮像装置の製造方法、及び、電子機器
JP2014112580A (ja) 2012-12-05 2014-06-19 Sony Corp 固体撮像素子および駆動方法
JP2015012127A (ja) 2013-06-28 2015-01-19 ソニー株式会社 固体撮像素子および電子機器
WO2018143306A1 (ja) 2017-01-31 2018-08-09 株式会社ニコン 撮像素子および電子カメラ
WO2020241717A1 (ja) 2019-05-31 2020-12-03 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
JP2020141146A (ja) 2020-05-26 2020-09-03 ソニーセミコンダクタソリューションズ株式会社 撮像装置

Also Published As

Publication number Publication date
JPWO2022201839A1 (https=) 2022-09-29
KR20230157329A (ko) 2023-11-16
DE112022001705T5 (de) 2024-01-18
WO2022201839A1 (ja) 2022-09-29
US20240113148A1 (en) 2024-04-04

Similar Documents

Publication Publication Date Title
WO2020189534A1 (ja) 撮像素子および半導体素子
JP7558164B2 (ja) 固体撮像素子、固体撮像素子の製造方法
JP7793602B2 (ja) 撮像素子及び撮像装置
JP7813798B2 (ja) 撮像装置及び電子機器
US20240038807A1 (en) Solid-state imaging device
JP2021190433A (ja) 受光素子、固体撮像装置及び電子機器
JP7823022B2 (ja) 撮像素子及び撮像装置
JP7636332B2 (ja) 撮像素子および撮像装置
US20250194283A1 (en) Photodetection device and electronic apparatus
US20250048767A1 (en) Light receiving device and electronic device
WO2024111280A1 (ja) 光検出装置および電子機器
JP7759387B2 (ja) 固体撮像装置およびその製造方法
US20250081643A1 (en) Solid-state imaging device and electronic device
EP4694174A1 (en) Optical detection device and electronic apparatus
US20250048768A1 (en) Semiconductor device, electronic equipment, and wafer
WO2024116928A1 (ja) 半導体装置及び電子機器
WO2024232316A1 (ja) 半導体装置
WO2024166667A1 (ja) 光検出装置及び電子機器
WO2024154666A1 (ja) 半導体装置
WO2024142692A1 (ja) 固体撮像装置
WO2023248925A1 (ja) 撮像素子及び電子機器
WO2023248926A1 (ja) 撮像素子及び電子機器
WO2024203524A1 (ja) 光検出装置及び電子機器
WO2025047167A1 (ja) 光検出装置
WO2026023245A1 (ja) 固体撮像装置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20250110

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250902

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20251024

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20260120

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20260218

R150 Certificate of patent or registration of utility model

Ref document number: 7823022

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150