JP7817156B2 - コンフォーマルな窒化チタン系薄膜及びその形成方法 - Google Patents

コンフォーマルな窒化チタン系薄膜及びその形成方法

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Publication number
JP7817156B2
JP7817156B2 JP2022520984A JP2022520984A JP7817156B2 JP 7817156 B2 JP7817156 B2 JP 7817156B2 JP 2022520984 A JP2022520984 A JP 2022520984A JP 2022520984 A JP2022520984 A JP 2022520984A JP 7817156 B2 JP7817156 B2 JP 7817156B2
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precursor
deposition
semiconductor substrate
exposure
tisin
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JP2022552203A (ja
JP2022552203A5 (https=
JPWO2021071628A5 (https=
Inventor
ムクヘルジー、ニロイ
キム、ハエ、ヤング
マック、ジェリイ
ヘオ、ジャエ、セオク
ジュング、スング－ホーン
ラシ、ソミルクマール、ジェイ．
チューグ、スリシュティ
ナグヒボラシュラフィ、ナリマン
オクヤマ、ヨシカズ
ニエ、ブンセン、ビー．
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ユージェヌス インコーポレイテッド
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/052—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2022520984A 2019-10-08 2020-09-14 コンフォーマルな窒化チタン系薄膜及びその形成方法 Active JP7817156B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/595,916 2019-10-08
US16/595,916 US11361992B2 (en) 2019-10-08 2019-10-08 Conformal titanium nitride-based thin films and methods of forming same
PCT/US2020/050639 WO2021071628A1 (en) 2019-10-08 2020-09-14 Conformal titanium nitride-based thin films and methods of forming same

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2026017703A Division JP2026071335A (ja) 2019-10-08 2026-02-05 コンフォーマルな窒化チタン系薄膜及びその形成方法

Publications (4)

Publication Number Publication Date
JP2022552203A JP2022552203A (ja) 2022-12-15
JP2022552203A5 JP2022552203A5 (https=) 2023-09-20
JPWO2021071628A5 JPWO2021071628A5 (https=) 2023-09-20
JP7817156B2 true JP7817156B2 (ja) 2026-02-18

Family

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JP2022520984A Active JP7817156B2 (ja) 2019-10-08 2020-09-14 コンフォーマルな窒化チタン系薄膜及びその形成方法

Country Status (6)

Country Link
US (2) US11361992B2 (https=)
JP (1) JP7817156B2 (https=)
KR (1) KR20220078671A (https=)
CN (1) CN114746575A (https=)
TW (1) TW202129843A (https=)
WO (1) WO2021071628A1 (https=)

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US11361992B2 (en) 2019-10-08 2022-06-14 Eugenus, Inc. Conformal titanium nitride-based thin films and methods of forming same
US12444648B2 (en) 2019-10-08 2025-10-14 Eugenus, Inc. Conformal titanium silicon nitride-based thin films and methods of forming same
US12431388B2 (en) 2019-10-08 2025-09-30 Eugenus, Inc. Conformal titanium silicon nitride-based thin films and methods of forming same
US20210358919A1 (en) * 2020-05-14 2021-11-18 Micron Technology, Inc. Methods of forming electronic apparatus with titanium nitride conductive structures, and related electronic apparatus and systems
US12112983B2 (en) * 2020-08-26 2024-10-08 Macom Technology Solutions Holdings, Inc. Atomic layer deposition of barrier metal layer for electrode of gallium nitride material device
JP7647185B2 (ja) * 2021-03-09 2025-03-18 東京エレクトロン株式会社 タングステン膜を成膜する方法、及びシステム
US20230032292A1 (en) * 2021-07-28 2023-02-02 Changxin Memory Technologies, Inc. Method for forming thin film by deposition process
CN114628409B (zh) * 2022-03-17 2025-09-19 京东方科技集团股份有限公司 一种显示基板及其制备方法、显示面板
US20230395429A1 (en) * 2022-06-06 2023-12-07 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive structures and methods of forming the same
WO2024064301A1 (en) * 2022-09-23 2024-03-28 Applied Materials, Inc. Middle of line dielectric layer engineering for via void prevention
US20250174456A1 (en) * 2023-11-24 2025-05-29 Applied Materials, Inc. Thermal cvd of titanium silicide methods to form semiconductor structures

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US20100151681A1 (en) 2008-12-11 2010-06-17 Asm International N.V. Titanium silicon nitride deposition
JP2011513983A (ja) 2008-03-07 2011-04-28 東京エレクトロン株式会社 滑らかで凝集しないＣｕシード層を用いた気泡の存在しない凹部のＣｕ充填体
US20180350657A1 (en) 2017-06-02 2018-12-06 Eugenus, Inc. Multi-region diffusion barrier containing titanium, silicon and nitrogen

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JP2001217206A (ja) 1999-12-08 2001-08-10 Samsung Electronics Co Ltd 原子層蒸着法を利用した金属層形成方法およびこれを用いた半導体素子
JP2011513983A (ja) 2008-03-07 2011-04-28 東京エレクトロン株式会社 滑らかで凝集しないＣｕシード層を用いた気泡の存在しない凹部のＣｕ充填体
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US20180350657A1 (en) 2017-06-02 2018-12-06 Eugenus, Inc. Multi-region diffusion barrier containing titanium, silicon and nitrogen

Also Published As

Publication number Publication date
US12165918B2 (en) 2024-12-10
JP2022552203A (ja) 2022-12-15
KR20220078671A (ko) 2022-06-10
TW202129843A (zh) 2021-08-01
US20210104433A1 (en) 2021-04-08
US11361992B2 (en) 2022-06-14
CN114746575A (zh) 2022-07-12
US20220415709A1 (en) 2022-12-29
WO2021071628A1 (en) 2021-04-15

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