JP7796318B2 - 画像表示装置の製造方法および画像表示装置 - Google Patents

画像表示装置の製造方法および画像表示装置

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Publication number
JP7796318B2
JP7796318B2 JP2023510835A JP2023510835A JP7796318B2 JP 7796318 B2 JP7796318 B2 JP 7796318B2 JP 2023510835 A JP2023510835 A JP 2023510835A JP 2023510835 A JP2023510835 A JP 2023510835A JP 7796318 B2 JP7796318 B2 JP 7796318B2
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JP
Japan
Prior art keywords
light
insulating film
layer
wiring
image display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023510835A
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English (en)
Japanese (ja)
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JPWO2022209764A1 (https=
Inventor
肇 秋元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Publication of JPWO2022209764A1 publication Critical patent/JPWO2022209764A1/ja
Application granted granted Critical
Publication of JP7796318B2 publication Critical patent/JP7796318B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2023510835A 2021-03-29 2022-03-11 画像表示装置の製造方法および画像表示装置 Active JP7796318B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021055840 2021-03-29
JP2021055840 2021-03-29
PCT/JP2022/010914 WO2022209764A1 (ja) 2021-03-29 2022-03-11 画像表示装置の製造方法および画像表示装置

Publications (2)

Publication Number Publication Date
JPWO2022209764A1 JPWO2022209764A1 (https=) 2022-10-06
JP7796318B2 true JP7796318B2 (ja) 2026-01-09

Family

ID=83456177

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023510835A Active JP7796318B2 (ja) 2021-03-29 2022-03-11 画像表示装置の製造方法および画像表示装置

Country Status (4)

Country Link
US (1) US20240014354A1 (https=)
JP (1) JP7796318B2 (https=)
CN (1) CN116783640A (https=)
WO (1) WO2022209764A1 (https=)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017094461A1 (ja) 2015-12-01 2017-06-08 シャープ株式会社 画像形成素子
US20180233536A1 (en) 2014-10-17 2018-08-16 Intel Corporation Microled display & assembly
US20190229097A1 (en) 2017-12-05 2019-07-25 Seoul Semiconductor Co., Ltd. Displaying apparatus having light emitting device, method of manufacturing the same and method of transferring light emitting device
WO2019168187A1 (ja) 2018-03-02 2019-09-06 株式会社 東芝 発光ダイオードシート、表示装置、発光装置、表示装置の製造方法及び発光装置の製造方法
CN110459557A (zh) 2019-08-16 2019-11-15 京东方科技集团股份有限公司 芯片晶圆及其制备方法、Micro-LED显示器
WO2020188851A1 (ja) 2019-03-15 2020-09-24 三菱電機株式会社 Ｌｅｄディスプレイ
WO2020226044A1 (ja) 2019-05-08 2020-11-12 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置
US20210091279A1 (en) 2019-09-25 2021-03-25 Samsung Electronics Co., Ltd. Semiconductor device, method of fabricating the same, and display device including the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6645486B2 (ja) * 2017-02-13 2020-02-14 日亜化学工業株式会社 発光装置およびその製造方法
US10193042B1 (en) * 2017-12-27 2019-01-29 Innolux Corporation Display device
KR102516131B1 (ko) * 2018-09-21 2023-04-03 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180233536A1 (en) 2014-10-17 2018-08-16 Intel Corporation Microled display & assembly
WO2017094461A1 (ja) 2015-12-01 2017-06-08 シャープ株式会社 画像形成素子
US20190229097A1 (en) 2017-12-05 2019-07-25 Seoul Semiconductor Co., Ltd. Displaying apparatus having light emitting device, method of manufacturing the same and method of transferring light emitting device
WO2019168187A1 (ja) 2018-03-02 2019-09-06 株式会社 東芝 発光ダイオードシート、表示装置、発光装置、表示装置の製造方法及び発光装置の製造方法
WO2020188851A1 (ja) 2019-03-15 2020-09-24 三菱電機株式会社 Ｌｅｄディスプレイ
WO2020226044A1 (ja) 2019-05-08 2020-11-12 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置
CN110459557A (zh) 2019-08-16 2019-11-15 京东方科技集团股份有限公司 芯片晶圆及其制备方法、Micro-LED显示器
US20210091279A1 (en) 2019-09-25 2021-03-25 Samsung Electronics Co., Ltd. Semiconductor device, method of fabricating the same, and display device including the same

Also Published As

Publication number Publication date
JPWO2022209764A1 (https=) 2022-10-06
CN116783640A (zh) 2023-09-19
WO2022209764A1 (ja) 2022-10-06
US20240014354A1 (en) 2024-01-11

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