JPWO2022209764A1 - - Google Patents
Info
- Publication number
- JPWO2022209764A1 JPWO2022209764A1 JP2023510835A JP2023510835A JPWO2022209764A1 JP WO2022209764 A1 JPWO2022209764 A1 JP WO2022209764A1 JP 2023510835 A JP2023510835 A JP 2023510835A JP 2023510835 A JP2023510835 A JP 2023510835A JP WO2022209764 A1 JPWO2022209764 A1 JP WO2022209764A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8515—Wavelength conversion means not being in contact with the bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/034—Manufacture or treatment of coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0364—Manufacture or treatment of packages of interconnections
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021055840 | 2021-03-29 | ||
| JP2021055840 | 2021-03-29 | ||
| PCT/JP2022/010914 WO2022209764A1 (ja) | 2021-03-29 | 2022-03-11 | 画像表示装置の製造方法および画像表示装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022209764A1 true JPWO2022209764A1 (https=) | 2022-10-06 |
| JP7796318B2 JP7796318B2 (ja) | 2026-01-09 |
Family
ID=83456177
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023510835A Active JP7796318B2 (ja) | 2021-03-29 | 2022-03-11 | 画像表示装置の製造方法および画像表示装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20240014354A1 (https=) |
| JP (1) | JP7796318B2 (https=) |
| CN (1) | CN116783640A (https=) |
| WO (1) | WO2022209764A1 (https=) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017094461A1 (ja) * | 2015-12-01 | 2017-06-08 | シャープ株式会社 | 画像形成素子 |
| US20180233536A1 (en) * | 2014-10-17 | 2018-08-16 | Intel Corporation | Microled display & assembly |
| KR20190079461A (ko) * | 2017-12-27 | 2019-07-05 | 이노럭스 코포레이션 | 디스플레이 장치 |
| US20190229097A1 (en) * | 2017-12-05 | 2019-07-25 | Seoul Semiconductor Co., Ltd. | Displaying apparatus having light emitting device, method of manufacturing the same and method of transferring light emitting device |
| WO2019168187A1 (ja) * | 2018-03-02 | 2019-09-06 | 株式会社 東芝 | 発光ダイオードシート、表示装置、発光装置、表示装置の製造方法及び発光装置の製造方法 |
| CN110459557A (zh) * | 2019-08-16 | 2019-11-15 | 京东方科技集团股份有限公司 | 芯片晶圆及其制备方法、Micro-LED显示器 |
| WO2020188851A1 (ja) * | 2019-03-15 | 2020-09-24 | 三菱電機株式会社 | Ｌｅｄディスプレイ |
| WO2020226044A1 (ja) * | 2019-05-08 | 2020-11-12 | 日亜化学工業株式会社 | 画像表示装置の製造方法および画像表示装置 |
| US20210091279A1 (en) * | 2019-09-25 | 2021-03-25 | Samsung Electronics Co., Ltd. | Semiconductor device, method of fabricating the same, and display device including the same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6645486B2 (ja) * | 2017-02-13 | 2020-02-14 | 日亜化学工業株式会社 | 発光装置およびその製造方法 |
| KR102516131B1 (ko) * | 2018-09-21 | 2023-04-03 | 삼성디스플레이 주식회사 | 표시 장치 및 그의 제조 방법 |
-
2022
- 2022-03-11 JP JP2023510835A patent/JP7796318B2/ja active Active
- 2022-03-11 CN CN202280013091.5A patent/CN116783640A/zh active Pending
- 2022-03-11 WO PCT/JP2022/010914 patent/WO2022209764A1/ja not_active Ceased
-
2023
- 2023-09-21 US US18/471,933 patent/US20240014354A1/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180233536A1 (en) * | 2014-10-17 | 2018-08-16 | Intel Corporation | Microled display & assembly |
| WO2017094461A1 (ja) * | 2015-12-01 | 2017-06-08 | シャープ株式会社 | 画像形成素子 |
| US20190229097A1 (en) * | 2017-12-05 | 2019-07-25 | Seoul Semiconductor Co., Ltd. | Displaying apparatus having light emitting device, method of manufacturing the same and method of transferring light emitting device |
| KR20190079461A (ko) * | 2017-12-27 | 2019-07-05 | 이노럭스 코포레이션 | 디스플레이 장치 |
| WO2019168187A1 (ja) * | 2018-03-02 | 2019-09-06 | 株式会社 東芝 | 発光ダイオードシート、表示装置、発光装置、表示装置の製造方法及び発光装置の製造方法 |
| WO2020188851A1 (ja) * | 2019-03-15 | 2020-09-24 | 三菱電機株式会社 | Ｌｅｄディスプレイ |
| WO2020226044A1 (ja) * | 2019-05-08 | 2020-11-12 | 日亜化学工業株式会社 | 画像表示装置の製造方法および画像表示装置 |
| CN110459557A (zh) * | 2019-08-16 | 2019-11-15 | 京东方科技集团股份有限公司 | 芯片晶圆及其制备方法、Micro-LED显示器 |
| US20210091279A1 (en) * | 2019-09-25 | 2021-03-25 | Samsung Electronics Co., Ltd. | Semiconductor device, method of fabricating the same, and display device including the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7796318B2 (ja) | 2026-01-09 |
| CN116783640A (zh) | 2023-09-19 |
| WO2022209764A1 (ja) | 2022-10-06 |
| US20240014354A1 (en) | 2024-01-11 |
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