JP7792509B2 - 荷電粒子線装置、計測方法 - Google Patents

荷電粒子線装置、計測方法

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Publication number
JP7792509B2
JP7792509B2 JP2024522814A JP2024522814A JP7792509B2 JP 7792509 B2 JP7792509 B2 JP 7792509B2 JP 2024522814 A JP2024522814 A JP 2024522814A JP 2024522814 A JP2024522814 A JP 2024522814A JP 7792509 B2 JP7792509 B2 JP 7792509B2
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JP
Japan
Prior art keywords
transistor
light
charged particle
particle beam
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2024522814A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023228338A1 (https=
Inventor
美南 内保
保宏 白崎
一史 谷内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Tech Corp filed Critical Hitachi High Tech Corp
Publication of JPWO2023228338A1 publication Critical patent/JPWO2023228338A1/ja
Application granted granted Critical
Publication of JP7792509B2 publication Critical patent/JP7792509B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/314—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry with comparison of measurements at specific and non-specific wavelengths
    • G01N21/3151—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry with comparison of measurements at specific and non-specific wavelengths using two sources of radiation of different wavelengths
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/07—Investigating materials by wave or particle radiation secondary emission
    • G01N2223/071—Investigating materials by wave or particle radiation secondary emission combination of measurements, at least 1 secondary emission
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2448—Secondary particle detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

Landscapes

  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Toxicology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
JP2024522814A 2022-05-25 2022-05-25 荷電粒子線装置、計測方法 Active JP7792509B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/021468 WO2023228338A1 (ja) 2022-05-25 2022-05-25 荷電粒子線装置、計測方法

Publications (2)

Publication Number Publication Date
JPWO2023228338A1 JPWO2023228338A1 (https=) 2023-11-30
JP7792509B2 true JP7792509B2 (ja) 2025-12-25

Family

ID=88918739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024522814A Active JP7792509B2 (ja) 2022-05-25 2022-05-25 荷電粒子線装置、計測方法

Country Status (5)

Country Link
US (1) US20250232946A1 (https=)
JP (1) JP7792509B2 (https=)
KR (1) KR20240157726A (https=)
TW (1) TWI861767B (https=)
WO (1) WO2023228338A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5430305A (en) 1994-04-08 1995-07-04 The United States Of America As Represented By The United States Department Of Energy Light-induced voltage alteration for integrated circuit analysis
JP2005108984A (ja) 2003-09-29 2005-04-21 Renesas Technology Corp 半導体装置の検査方法および半導体装置の製造方法
JP2009246012A (ja) 2008-03-28 2009-10-22 Hitachi High-Technologies Corp 帯電電位測定方法、及び荷電粒子顕微鏡
JP2014135314A (ja) 2013-01-08 2014-07-24 Renesas Electronics Corp 半導体装置の不良解析方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5565146A (en) * 1978-11-11 1980-05-16 Agency Of Ind Science & Technol Characteristic measuring method for charge trap center in insulator
US7205539B1 (en) 2005-03-10 2007-04-17 Kla-Tencor Technologies Corporation Sample charging control in charged-particle systems
WO2022091180A1 (ja) * 2020-10-26 2022-05-05 株式会社日立ハイテク 荷電粒子線装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5430305A (en) 1994-04-08 1995-07-04 The United States Of America As Represented By The United States Department Of Energy Light-induced voltage alteration for integrated circuit analysis
JP2005108984A (ja) 2003-09-29 2005-04-21 Renesas Technology Corp 半導体装置の検査方法および半導体装置の製造方法
JP2009246012A (ja) 2008-03-28 2009-10-22 Hitachi High-Technologies Corp 帯電電位測定方法、及び荷電粒子顕微鏡
JP2014135314A (ja) 2013-01-08 2014-07-24 Renesas Electronics Corp 半導体装置の不良解析方法

Also Published As

Publication number Publication date
KR20240157726A (ko) 2024-11-01
WO2023228338A1 (ja) 2023-11-30
TW202346878A (zh) 2023-12-01
JPWO2023228338A1 (https=) 2023-11-30
TWI861767B (zh) 2024-11-11
US20250232946A1 (en) 2025-07-17

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