JPWO2023228338A1 - - Google Patents
Info
- Publication number
- JPWO2023228338A1 JPWO2023228338A1 JP2024522814A JP2024522814A JPWO2023228338A1 JP WO2023228338 A1 JPWO2023228338 A1 JP WO2023228338A1 JP 2024522814 A JP2024522814 A JP 2024522814A JP 2024522814 A JP2024522814 A JP 2024522814A JP WO2023228338 A1 JPWO2023228338 A1 JP WO2023228338A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/22—Optical, image processing or photographic arrangements associated with the tube
- H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/314—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry with comparison of measurements at specific and non-specific wavelengths
- G01N21/3151—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry with comparison of measurements at specific and non-specific wavelengths using two sources of radiation of different wavelengths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/07—Investigating materials by wave or particle radiation secondary emission
- G01N2223/071—Investigating materials by wave or particle radiation secondary emission combination of measurements, at least 1 secondary emission
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/60—Specific applications or type of materials
- G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
- G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2448—Secondary particle detectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
- H01J2237/2817—Pattern inspection
Landscapes
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Toxicology (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2022/021468 WO2023228338A1 (ja) | 2022-05-25 | 2022-05-25 | 荷電粒子線装置、計測方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023228338A1 true JPWO2023228338A1 (https=) | 2023-11-30 |
| JP7792509B2 JP7792509B2 (ja) | 2025-12-25 |
Family
ID=88918739
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024522814A Active JP7792509B2 (ja) | 2022-05-25 | 2022-05-25 | 荷電粒子線装置、計測方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250232946A1 (https=) |
| JP (1) | JP7792509B2 (https=) |
| KR (1) | KR20240157726A (https=) |
| TW (1) | TWI861767B (https=) |
| WO (1) | WO2023228338A1 (https=) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6213619B2 (https=) * | 1978-11-11 | 1987-03-27 | Kogyo Gijutsu Incho | |
| US5430305A (en) * | 1994-04-08 | 1995-07-04 | The United States Of America As Represented By The United States Department Of Energy | Light-induced voltage alteration for integrated circuit analysis |
| JP2005108984A (ja) * | 2003-09-29 | 2005-04-21 | Renesas Technology Corp | 半導体装置の検査方法および半導体装置の製造方法 |
| JP2009246012A (ja) * | 2008-03-28 | 2009-10-22 | Hitachi High-Technologies Corp | 帯電電位測定方法、及び荷電粒子顕微鏡 |
| JP2014135314A (ja) * | 2013-01-08 | 2014-07-24 | Renesas Electronics Corp | 半導体装置の不良解析方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7205539B1 (en) | 2005-03-10 | 2007-04-17 | Kla-Tencor Technologies Corporation | Sample charging control in charged-particle systems |
| WO2022091180A1 (ja) * | 2020-10-26 | 2022-05-05 | 株式会社日立ハイテク | 荷電粒子線装置 |
-
2022
- 2022-05-25 WO PCT/JP2022/021468 patent/WO2023228338A1/ja not_active Ceased
- 2022-05-25 JP JP2024522814A patent/JP7792509B2/ja active Active
- 2022-05-25 KR KR1020247032671A patent/KR20240157726A/ko active Pending
- 2022-05-25 US US18/853,804 patent/US20250232946A1/en active Pending
-
2023
- 2023-03-17 TW TW112110066A patent/TWI861767B/zh active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6213619B2 (https=) * | 1978-11-11 | 1987-03-27 | Kogyo Gijutsu Incho | |
| US5430305A (en) * | 1994-04-08 | 1995-07-04 | The United States Of America As Represented By The United States Department Of Energy | Light-induced voltage alteration for integrated circuit analysis |
| JP2005108984A (ja) * | 2003-09-29 | 2005-04-21 | Renesas Technology Corp | 半導体装置の検査方法および半導体装置の製造方法 |
| JP2009246012A (ja) * | 2008-03-28 | 2009-10-22 | Hitachi High-Technologies Corp | 帯電電位測定方法、及び荷電粒子顕微鏡 |
| JP2014135314A (ja) * | 2013-01-08 | 2014-07-24 | Renesas Electronics Corp | 半導体装置の不良解析方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20240157726A (ko) | 2024-11-01 |
| WO2023228338A1 (ja) | 2023-11-30 |
| TW202346878A (zh) | 2023-12-01 |
| JP7792509B2 (ja) | 2025-12-25 |
| TWI861767B (zh) | 2024-11-11 |
| US20250232946A1 (en) | 2025-07-17 |
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