TWI861767B - 帶電粒子線裝置，計測方法 - Google Patents

帶電粒子線裝置，計測方法 Download PDF

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Publication number
TWI861767B
TWI861767B TW112110066A TW112110066A TWI861767B TW I861767 B TWI861767 B TW I861767B TW 112110066 A TW112110066 A TW 112110066A TW 112110066 A TW112110066 A TW 112110066A TW I861767 B TWI861767 B TW I861767B
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TW
Taiwan
Prior art keywords
transistor
light
charged particle
particle beam
gate
Prior art date
Application number
TW112110066A
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English (en)
Chinese (zh)
Other versions
TW202346878A (zh
Inventor
內保美南
白崎保宏
谷內一史
Original Assignee
日商日立全球先端科技股份有限公司
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Publication of TW202346878A publication Critical patent/TW202346878A/zh
Application granted granted Critical
Publication of TWI861767B publication Critical patent/TWI861767B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/314—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry with comparison of measurements at specific and non-specific wavelengths
    • G01N21/3151—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry with comparison of measurements at specific and non-specific wavelengths using two sources of radiation of different wavelengths
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/07—Investigating materials by wave or particle radiation secondary emission
    • G01N2223/071—Investigating materials by wave or particle radiation secondary emission combination of measurements, at least 1 secondary emission
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2448—Secondary particle detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

Landscapes

  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Toxicology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
TW112110066A 2022-05-25 2023-03-17 帶電粒子線裝置，計測方法 TWI861767B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
WOPCT/JP2022/021468 2022-05-25
PCT/JP2022/021468 WO2023228338A1 (ja) 2022-05-25 2022-05-25 荷電粒子線装置、計測方法

Publications (2)

Publication Number Publication Date
TW202346878A TW202346878A (zh) 2023-12-01
TWI861767B true TWI861767B (zh) 2024-11-11

Family

ID=88918739

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112110066A TWI861767B (zh) 2022-05-25 2023-03-17 帶電粒子線裝置，計測方法

Country Status (5)

Country Link
US (1) US20250232946A1 (https=)
JP (1) JP7792509B2 (https=)
KR (1) KR20240157726A (https=)
TW (1) TWI861767B (https=)
WO (1) WO2023228338A1 (https=)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202217999A (zh) * 2020-10-26 2022-05-01 日商日立全球先端科技股份有限公司 帶電粒子線裝置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5565146A (en) * 1978-11-11 1980-05-16 Agency Of Ind Science & Technol Characteristic measuring method for charge trap center in insulator
US5430305A (en) * 1994-04-08 1995-07-04 The United States Of America As Represented By The United States Department Of Energy Light-induced voltage alteration for integrated circuit analysis
JP2005108984A (ja) * 2003-09-29 2005-04-21 Renesas Technology Corp 半導体装置の検査方法および半導体装置の製造方法
US7205539B1 (en) 2005-03-10 2007-04-17 Kla-Tencor Technologies Corporation Sample charging control in charged-particle systems
JP5074262B2 (ja) * 2008-03-28 2012-11-14 株式会社日立ハイテクノロジーズ 帯電電位測定方法、及び荷電粒子顕微鏡
JP2014135314A (ja) * 2013-01-08 2014-07-24 Renesas Electronics Corp 半導体装置の不良解析方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202217999A (zh) * 2020-10-26 2022-05-01 日商日立全球先端科技股份有限公司 帶電粒子線裝置

Also Published As

Publication number Publication date
KR20240157726A (ko) 2024-11-01
WO2023228338A1 (ja) 2023-11-30
TW202346878A (zh) 2023-12-01
JPWO2023228338A1 (https=) 2023-11-30
JP7792509B2 (ja) 2025-12-25
US20250232946A1 (en) 2025-07-17

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