JP7791817B2 - 端部／中央部の不均一性を軽減するためにウエハの外周近傍に凹部を備えた半導体処理チャック - Google Patents

端部／中央部の不均一性を軽減するためにウエハの外周近傍に凹部を備えた半導体処理チャック

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Publication number
JP7791817B2
JP7791817B2 JP2022535808A JP2022535808A JP7791817B2 JP 7791817 B2 JP7791817 B2 JP 7791817B2 JP 2022535808 A JP2022535808 A JP 2022535808A JP 2022535808 A JP2022535808 A JP 2022535808A JP 7791817 B2 JP7791817 B2 JP 7791817B2
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JP
Japan
Prior art keywords
vacuum
chuck
gas
groove
recess
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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JP2022535808A
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English (en)
Japanese (ja)
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JP2023507091A5 (https=
JP2023507091A (ja
Inventor
ヴェランキ・ラヴィ
レンズ・エリック・エイチ．
パン・ユ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
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Publication of JP2023507091A publication Critical patent/JP2023507091A/ja
Publication of JP2023507091A5 publication Critical patent/JP2023507091A5/ja
Application granted granted Critical
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23C—MILLING
    • B23C3/00—Milling particular work; Special milling operations; Machines therefor
    • B23C3/28—Grooving workpieces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
JP2022535808A 2019-12-20 2020-12-17 端部／中央部の不均一性を軽減するためにウエハの外周近傍に凹部を備えた半導体処理チャック Active JP7791817B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962951849P 2019-12-20 2019-12-20
US62/951,849 2019-12-20
PCT/US2020/065746 WO2021127272A1 (en) 2019-12-20 2020-12-17 Semiconductor processing chucks featuring recessed regions near outer perimeter of wafer for mitigation of edge/center nonuniformity

Publications (3)

Publication Number Publication Date
JP2023507091A JP2023507091A (ja) 2023-02-21
JP2023507091A5 JP2023507091A5 (https=) 2023-12-25
JP7791817B2 true JP7791817B2 (ja) 2025-12-24

Family

ID=76478170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022535808A Active JP7791817B2 (ja) 2019-12-20 2020-12-17 端部／中央部の不均一性を軽減するためにウエハの外周近傍に凹部を備えた半導体処理チャック

Country Status (5)

Country Link
US (1) US20230010049A1 (https=)
JP (1) JP7791817B2 (https=)
KR (3) KR20260049844A (https=)
CN (1) CN114846596A (https=)
WO (1) WO2021127272A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022544221A (ja) * 2019-08-16 2022-10-17 ラム リサーチ コーポレーション ウエハ内の様々な反りを補償するために空間を調整する堆積
EP3958297B1 (de) * 2020-08-18 2023-10-04 Siltronic AG Verfahren zum herstellen eines vakuumgreifers für halbleiterwerkstücke und vakuumgreifer
US12400993B2 (en) * 2020-08-19 2025-08-26 Shinkawa Ltd. Substrate holder and bonding system
US20220367236A1 (en) * 2021-05-16 2022-11-17 Applied Materials, Inc. Heater pedestal with improved uniformity
KR102806214B1 (ko) * 2022-03-29 2025-05-13 토토 가부시키가이샤 정전 척
CN118127490B (zh) * 2024-02-28 2025-03-21 江苏首芯半导体科技有限公司 通气面板及薄膜沉积腔体
CN120824246A (zh) * 2024-05-21 2025-10-21 北京北方华创微电子装备有限公司 承载装置及半导体加工设备

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002518601A (ja) 1998-06-24 2002-06-25 アプライド マテリアルズ インコーポレイテッド パージガスチャネル及びポンプシステムを有する基板支持装置
CN1653587A (zh) 2002-02-07 2005-08-10 应用材料有限公司 半导体处理室中使用的物件及其制造方法
JP2007067394A (ja) 2005-08-05 2007-03-15 Tokyo Electron Ltd 基板処理装置およびそれに用いる基板載置台
JP2007182622A (ja) 2005-12-31 2007-07-19 Ips Ltd 薄膜蒸着用ヒータ
JP2009256789A (ja) 2008-03-21 2009-11-05 Ngk Insulators Ltd セラミックスヒータ
JP2016063223A (ja) 2014-09-12 2016-04-25 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 裏面成膜を低減し、基板端部の厚さ変化を緩和するシステムおよび方法
JP2016184645A (ja) 2015-03-26 2016-10-20 住友大阪セメント株式会社 静電チャック装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5620525A (en) * 1990-07-16 1997-04-15 Novellus Systems, Inc. Apparatus for supporting a substrate and introducing gas flow doximate to an edge of the substrate
US5843233A (en) * 1990-07-16 1998-12-01 Novellus Systems, Inc. Exclusion guard and gas-based substrate protection for chemical vapor deposition apparatus
TWI734770B (zh) * 2016-04-24 2021-08-01 美商應用材料股份有限公司 用於防止空間ald處理腔室中之背側沉積的設備
US10910195B2 (en) * 2017-01-05 2021-02-02 Lam Research Corporation Substrate support with improved process uniformity
US10553404B2 (en) * 2017-02-01 2020-02-04 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
CN111448647B (zh) * 2018-03-26 2023-08-01 日本碍子株式会社 静电卡盘加热器

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002518601A (ja) 1998-06-24 2002-06-25 アプライド マテリアルズ インコーポレイテッド パージガスチャネル及びポンプシステムを有する基板支持装置
CN1653587A (zh) 2002-02-07 2005-08-10 应用材料有限公司 半导体处理室中使用的物件及其制造方法
JP2007067394A (ja) 2005-08-05 2007-03-15 Tokyo Electron Ltd 基板処理装置およびそれに用いる基板載置台
JP2007182622A (ja) 2005-12-31 2007-07-19 Ips Ltd 薄膜蒸着用ヒータ
JP2009256789A (ja) 2008-03-21 2009-11-05 Ngk Insulators Ltd セラミックスヒータ
JP2016063223A (ja) 2014-09-12 2016-04-25 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 裏面成膜を低減し、基板端部の厚さ変化を緩和するシステムおよび方法
JP2016184645A (ja) 2015-03-26 2016-10-20 住友大阪セメント株式会社 静電チャック装置

Also Published As

Publication number Publication date
KR102940022B1 (ko) 2026-03-16
KR20260049844A (ko) 2026-04-14
KR20220119112A (ko) 2022-08-26
KR20250164872A (ko) 2025-11-25
CN114846596A (zh) 2022-08-02
KR102886824B1 (ko) 2025-11-14
JP2023507091A (ja) 2023-02-21
WO2021127272A1 (en) 2021-06-24
US20230010049A1 (en) 2023-01-12

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