KR20260049844A - 에지/중심 불균일성 완화를 위한 웨이퍼의 외측 주변부 근방 리세스된 영역들을 특징으로 하는 반도체 프로세싱 척들 - Google Patents

에지/중심 불균일성 완화를 위한 웨이퍼의 외측 주변부 근방 리세스된 영역들을 특징으로 하는 반도체 프로세싱 척들

Info

Publication number
KR20260049844A
KR20260049844A KR1020267007694A KR20267007694A KR20260049844A KR 20260049844 A KR20260049844 A KR 20260049844A KR 1020267007694 A KR1020267007694 A KR 1020267007694A KR 20267007694 A KR20267007694 A KR 20267007694A KR 20260049844 A KR20260049844 A KR 20260049844A
Authority
KR
South Korea
Prior art keywords
chuck
semiconductor wafer
edge
wafer
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020267007694A
Other languages
English (en)
Korean (ko)
Inventor
라비 벨런키
에릭 에이치. 렌즈
유 판
Original Assignee
램 리써치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20260049844A publication Critical patent/KR20260049844A/ko
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23C—MILLING
    • B23C3/00—Milling particular work; Special milling operations; Machines therefor
    • B23C3/28—Grooving workpieces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
KR1020267007694A 2019-12-20 2020-12-17 에지/중심 불균일성 완화를 위한 웨이퍼의 외측 주변부 근방 리세스된 영역들을 특징으로 하는 반도체 프로세싱 척들 Pending KR20260049844A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201962951849P 2019-12-20 2019-12-20
US62/951,849 2019-12-20
PCT/US2020/065746 WO2021127272A1 (en) 2019-12-20 2020-12-17 Semiconductor processing chucks featuring recessed regions near outer perimeter of wafer for mitigation of edge/center nonuniformity
KR1020257037872A KR102940022B1 (ko) 2019-12-20 2020-12-17 에지/중심 불균일성 완화를 위한 웨이퍼의 외측 주변부 근방 리세스된 영역들을 특징으로 하는 반도체 프로세싱 척들

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020257037872A Division KR102940022B1 (ko) 2019-12-20 2020-12-17 에지/중심 불균일성 완화를 위한 웨이퍼의 외측 주변부 근방 리세스된 영역들을 특징으로 하는 반도체 프로세싱 척들

Publications (1)

Publication Number Publication Date
KR20260049844A true KR20260049844A (ko) 2026-04-14

Family

ID=76478170

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020267007694A Pending KR20260049844A (ko) 2019-12-20 2020-12-17 에지/중심 불균일성 완화를 위한 웨이퍼의 외측 주변부 근방 리세스된 영역들을 특징으로 하는 반도체 프로세싱 척들
KR1020227025114A Active KR102886824B1 (ko) 2019-12-20 2020-12-17 에지/중심 불균일성 완화를 위한 웨이퍼의 외측 주변부 근방 리세스된 영역들을 특징으로 하는 반도체 프로세싱 척들
KR1020257037872A Active KR102940022B1 (ko) 2019-12-20 2020-12-17 에지/중심 불균일성 완화를 위한 웨이퍼의 외측 주변부 근방 리세스된 영역들을 특징으로 하는 반도체 프로세싱 척들

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020227025114A Active KR102886824B1 (ko) 2019-12-20 2020-12-17 에지/중심 불균일성 완화를 위한 웨이퍼의 외측 주변부 근방 리세스된 영역들을 특징으로 하는 반도체 프로세싱 척들
KR1020257037872A Active KR102940022B1 (ko) 2019-12-20 2020-12-17 에지/중심 불균일성 완화를 위한 웨이퍼의 외측 주변부 근방 리세스된 영역들을 특징으로 하는 반도체 프로세싱 척들

Country Status (5)

Country Link
US (1) US20230010049A1 (https=)
JP (1) JP7791817B2 (https=)
KR (3) KR20260049844A (https=)
CN (1) CN114846596A (https=)
WO (1) WO2021127272A1 (https=)

Families Citing this family (7)

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Publication number Priority date Publication date Assignee Title
JP2022544221A (ja) * 2019-08-16 2022-10-17 ラム リサーチ コーポレーション ウエハ内の様々な反りを補償するために空間を調整する堆積
EP3958297B1 (de) * 2020-08-18 2023-10-04 Siltronic AG Verfahren zum herstellen eines vakuumgreifers für halbleiterwerkstücke und vakuumgreifer
US12400993B2 (en) * 2020-08-19 2025-08-26 Shinkawa Ltd. Substrate holder and bonding system
US20220367236A1 (en) * 2021-05-16 2022-11-17 Applied Materials, Inc. Heater pedestal with improved uniformity
KR102806214B1 (ko) * 2022-03-29 2025-05-13 토토 가부시키가이샤 정전 척
CN118127490B (zh) * 2024-02-28 2025-03-21 江苏首芯半导体科技有限公司 通气面板及薄膜沉积腔体
CN120824246A (zh) * 2024-05-21 2025-10-21 北京北方华创微电子装备有限公司 承载装置及半导体加工设备

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US5620525A (en) * 1990-07-16 1997-04-15 Novellus Systems, Inc. Apparatus for supporting a substrate and introducing gas flow doximate to an edge of the substrate
US5843233A (en) * 1990-07-16 1998-12-01 Novellus Systems, Inc. Exclusion guard and gas-based substrate protection for chemical vapor deposition apparatus
US6040011A (en) * 1998-06-24 2000-03-21 Applied Materials, Inc. Substrate support member with a purge gas channel and pumping system
US6632325B2 (en) * 2002-02-07 2003-10-14 Applied Materials, Inc. Article for use in a semiconductor processing chamber and method of fabricating same
JP2007067394A (ja) * 2005-08-05 2007-03-15 Tokyo Electron Ltd 基板処理装置およびそれに用いる基板載置台
KR100804169B1 (ko) * 2005-12-31 2008-02-18 주식회사 아이피에스 박막증착챔버용 서셉터
US8540819B2 (en) * 2008-03-21 2013-09-24 Ngk Insulators, Ltd. Ceramic heater
US9460915B2 (en) * 2014-09-12 2016-10-04 Lam Research Corporation Systems and methods for reducing backside deposition and mitigating thickness changes at substrate edges
JP6424700B2 (ja) * 2015-03-26 2018-11-21 住友大阪セメント株式会社 静電チャック装置
TWI734770B (zh) * 2016-04-24 2021-08-01 美商應用材料股份有限公司 用於防止空間ald處理腔室中之背側沉積的設備
US10910195B2 (en) * 2017-01-05 2021-02-02 Lam Research Corporation Substrate support with improved process uniformity
US10553404B2 (en) * 2017-02-01 2020-02-04 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
CN111448647B (zh) * 2018-03-26 2023-08-01 日本碍子株式会社 静电卡盘加热器

Also Published As

Publication number Publication date
JP7791817B2 (ja) 2025-12-24
KR102940022B1 (ko) 2026-03-16
KR20220119112A (ko) 2022-08-26
KR20250164872A (ko) 2025-11-25
CN114846596A (zh) 2022-08-02
KR102886824B1 (ko) 2025-11-14
JP2023507091A (ja) 2023-02-21
WO2021127272A1 (en) 2021-06-24
US20230010049A1 (en) 2023-01-12

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