JP7779929B2 - 高さ調節部材、熱処理装置および静電チャック装置 - Google Patents

高さ調節部材、熱処理装置および静電チャック装置

Info

Publication number
JP7779929B2
JP7779929B2 JP2023564972A JP2023564972A JP7779929B2 JP 7779929 B2 JP7779929 B2 JP 7779929B2 JP 2023564972 A JP2023564972 A JP 2023564972A JP 2023564972 A JP2023564972 A JP 2023564972A JP 7779929 B2 JP7779929 B2 JP 7779929B2
Authority
JP
Japan
Prior art keywords
height adjustment
adjustment member
dlc film
support portion
pores
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023564972A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023100821A1 (https=
JPWO2023100821A5 (https=
Inventor
浩 浜島
美恵子 八嶋
憲一 古舘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Publication of JPWO2023100821A1 publication Critical patent/JPWO2023100821A1/ja
Publication of JPWO2023100821A5 publication Critical patent/JPWO2023100821A5/ja
Application granted granted Critical
Publication of JP7779929B2 publication Critical patent/JP7779929B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7614—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Ceramic Products (AREA)
JP2023564972A 2021-11-30 2022-11-28 高さ調節部材、熱処理装置および静電チャック装置 Active JP7779929B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021194317 2021-11-30
JP2021194317 2021-11-30
PCT/JP2022/043825 WO2023100821A1 (ja) 2021-11-30 2022-11-28 高さ調節部材、熱処理装置および静電チャック装置

Publications (3)

Publication Number Publication Date
JPWO2023100821A1 JPWO2023100821A1 (https=) 2023-06-08
JPWO2023100821A5 JPWO2023100821A5 (https=) 2024-08-07
JP7779929B2 true JP7779929B2 (ja) 2025-12-03

Family

ID=86612240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023564972A Active JP7779929B2 (ja) 2021-11-30 2022-11-28 高さ調節部材、熱処理装置および静電チャック装置

Country Status (5)

Country Link
JP (1) JP7779929B2 (https=)
KR (1) KR102908713B1 (https=)
CN (1) CN118302847A (https=)
TW (1) TWI850883B (https=)
WO (1) WO2023100821A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7743303B2 (ja) * 2021-12-28 2025-09-24 株式会社ディスコ 保持テーブル、それを備える加工装置、及び、加工方法
CN119601448B (zh) * 2023-09-11 2025-12-12 中微半导体设备(上海)股份有限公司 一种电极组件及等离子体处理装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003282688A (ja) 2002-03-27 2003-10-03 Kyocera Corp 静電チャック
JP2004259974A (ja) 2003-02-26 2004-09-16 Kyocera Corp リフトピン
JP2015094002A (ja) 2013-11-12 2015-05-18 テクノクオーツ株式会社 基板保持盤およびその製造方法
JP2015126208A (ja) 2013-12-27 2015-07-06 株式会社日本セラテック 真空吸着装置およびその製造方法
JP2016092129A (ja) 2014-10-31 2016-05-23 株式会社Sumco リフトピン、該リフトピンを用いたエピタキシャル成長装置およびエピタキシャルウェーハの製造方法
WO2020111209A1 (ja) 2018-11-29 2020-06-04 京セラ株式会社 撹拌棒および撹拌装置
WO2021157722A1 (ja) 2020-02-07 2021-08-12 京セラ株式会社 ウェハーボート

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6741548B2 (ja) * 2016-10-14 2020-08-19 日本碍子株式会社 半導体製造装置用部材及びその製法
KR102379016B1 (ko) 2019-10-31 2022-03-28 세메스 주식회사 지지 유닛, 이를 포함하는 기판 처리 장치 및 이를 이용하는 기판 처리 방법
JP7550603B2 (ja) * 2020-03-03 2024-09-13 東京エレクトロン株式会社 プラズマ処理システム及びエッジリングの交換方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003282688A (ja) 2002-03-27 2003-10-03 Kyocera Corp 静電チャック
JP2004259974A (ja) 2003-02-26 2004-09-16 Kyocera Corp リフトピン
JP2015094002A (ja) 2013-11-12 2015-05-18 テクノクオーツ株式会社 基板保持盤およびその製造方法
JP2015126208A (ja) 2013-12-27 2015-07-06 株式会社日本セラテック 真空吸着装置およびその製造方法
JP2016092129A (ja) 2014-10-31 2016-05-23 株式会社Sumco リフトピン、該リフトピンを用いたエピタキシャル成長装置およびエピタキシャルウェーハの製造方法
WO2020111209A1 (ja) 2018-11-29 2020-06-04 京セラ株式会社 撹拌棒および撹拌装置
WO2021157722A1 (ja) 2020-02-07 2021-08-12 京セラ株式会社 ウェハーボート

Also Published As

Publication number Publication date
WO2023100821A1 (ja) 2023-06-08
TWI850883B (zh) 2024-08-01
CN118302847A (zh) 2024-07-05
JPWO2023100821A1 (https=) 2023-06-08
TW202338152A (zh) 2023-10-01
KR102908713B1 (ko) 2026-01-07
KR20240093736A (ko) 2024-06-24

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