KR102908713B1 - 높이 조절 부재, 열처리 장치 및 정전 척 장치 - Google Patents

높이 조절 부재, 열처리 장치 및 정전 척 장치

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Publication number
KR102908713B1
KR102908713B1 KR1020247016350A KR20247016350A KR102908713B1 KR 102908713 B1 KR102908713 B1 KR 102908713B1 KR 1020247016350 A KR1020247016350 A KR 1020247016350A KR 20247016350 A KR20247016350 A KR 20247016350A KR 102908713 B1 KR102908713 B1 KR 102908713B1
Authority
KR
South Korea
Prior art keywords
height adjustment
adjustment member
pores
average value
dlc film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020247016350A
Other languages
English (en)
Korean (ko)
Other versions
KR20240093736A (ko
Inventor
히로시 하마시마
미에코 야시마
켄이치 후루타치
Original Assignee
교세라 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 교세라 가부시키가이샤 filed Critical 교세라 가부시키가이샤
Publication of KR20240093736A publication Critical patent/KR20240093736A/ko
Application granted granted Critical
Publication of KR102908713B1 publication Critical patent/KR102908713B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7614—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H01L21/6875—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • H01L21/67109—
    • H01L21/68735—
    • H01L21/68742—
    • H01L21/68757—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Ceramic Products (AREA)
KR1020247016350A 2021-11-30 2022-11-28 높이 조절 부재, 열처리 장치 및 정전 척 장치 Active KR102908713B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021194317 2021-11-30
JPJP-P-2021-194317 2021-11-30
PCT/JP2022/043825 WO2023100821A1 (ja) 2021-11-30 2022-11-28 高さ調節部材、熱処理装置および静電チャック装置

Publications (2)

Publication Number Publication Date
KR20240093736A KR20240093736A (ko) 2024-06-24
KR102908713B1 true KR102908713B1 (ko) 2026-01-07

Family

ID=86612240

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247016350A Active KR102908713B1 (ko) 2021-11-30 2022-11-28 높이 조절 부재, 열처리 장치 및 정전 척 장치

Country Status (5)

Country Link
JP (1) JP7779929B2 (https=)
KR (1) KR102908713B1 (https=)
CN (1) CN118302847A (https=)
TW (1) TWI850883B (https=)
WO (1) WO2023100821A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7743303B2 (ja) * 2021-12-28 2025-09-24 株式会社ディスコ 保持テーブル、それを備える加工装置、及び、加工方法
CN119601448B (zh) * 2023-09-11 2025-12-12 中微半导体设备(上海)股份有限公司 一种电极组件及等离子体处理装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003282688A (ja) * 2002-03-27 2003-10-03 Kyocera Corp 静電チャック
JP2004259974A (ja) * 2003-02-26 2004-09-16 Kyocera Corp リフトピン
JP2016092129A (ja) * 2014-10-31 2016-05-23 株式会社Sumco リフトピン、該リフトピンを用いたエピタキシャル成長装置およびエピタキシャルウェーハの製造方法
WO2021157722A1 (ja) * 2020-02-07 2021-08-12 京セラ株式会社 ウェハーボート

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6213960B2 (ja) * 2013-11-12 2017-10-18 テクノクオーツ株式会社 基板保持盤
JP6199180B2 (ja) * 2013-12-27 2017-09-20 日本特殊陶業株式会社 真空吸着装置およびその製造方法
JP6741548B2 (ja) * 2016-10-14 2020-08-19 日本碍子株式会社 半導体製造装置用部材及びその製法
WO2020111209A1 (ja) * 2018-11-29 2020-06-04 京セラ株式会社 撹拌棒および撹拌装置
KR102379016B1 (ko) 2019-10-31 2022-03-28 세메스 주식회사 지지 유닛, 이를 포함하는 기판 처리 장치 및 이를 이용하는 기판 처리 방법
JP7550603B2 (ja) * 2020-03-03 2024-09-13 東京エレクトロン株式会社 プラズマ処理システム及びエッジリングの交換方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003282688A (ja) * 2002-03-27 2003-10-03 Kyocera Corp 静電チャック
JP2004259974A (ja) * 2003-02-26 2004-09-16 Kyocera Corp リフトピン
JP2016092129A (ja) * 2014-10-31 2016-05-23 株式会社Sumco リフトピン、該リフトピンを用いたエピタキシャル成長装置およびエピタキシャルウェーハの製造方法
WO2021157722A1 (ja) * 2020-02-07 2021-08-12 京セラ株式会社 ウェハーボート

Also Published As

Publication number Publication date
WO2023100821A1 (ja) 2023-06-08
JP7779929B2 (ja) 2025-12-03
TWI850883B (zh) 2024-08-01
CN118302847A (zh) 2024-07-05
JPWO2023100821A1 (https=) 2023-06-08
TW202338152A (zh) 2023-10-01
KR20240093736A (ko) 2024-06-24

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