JP7774480B2 - Ｅｓｄ保護回路及び半導体装置 - Google Patents

Ｅｓｄ保護回路及び半導体装置

Info

Publication number
JP7774480B2
JP7774480B2 JP2022047837A JP2022047837A JP7774480B2 JP 7774480 B2 JP7774480 B2 JP 7774480B2 JP 2022047837 A JP2022047837 A JP 2022047837A JP 2022047837 A JP2022047837 A JP 2022047837A JP 7774480 B2 JP7774480 B2 JP 7774480B2
Authority
JP
Japan
Prior art keywords
type
esd protection
protection circuit
region
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022047837A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023141491A (ja
JP2023141491A5 (enExample
Inventor
智光 理崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ablic Inc
Original Assignee
Ablic Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ablic Inc filed Critical Ablic Inc
Priority to JP2022047837A priority Critical patent/JP7774480B2/ja
Priority to KR1020230030376A priority patent/KR20230138893A/ko
Priority to TW112109049A priority patent/TW202339178A/zh
Priority to US18/183,164 priority patent/US20230307439A1/en
Publication of JP2023141491A publication Critical patent/JP2023141491A/ja
Publication of JP2023141491A5 publication Critical patent/JP2023141491A5/ja
Application granted granted Critical
Publication of JP7774480B2 publication Critical patent/JP7774480B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2022047837A 2022-03-24 2022-03-24 Ｅｓｄ保護回路及び半導体装置 Active JP7774480B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2022047837A JP7774480B2 (ja) 2022-03-24 2022-03-24 Ｅｓｄ保護回路及び半導体装置
KR1020230030376A KR20230138893A (ko) 2022-03-24 2023-03-08 Esd 보호회로 및 반도체 장치
TW112109049A TW202339178A (zh) 2022-03-24 2023-03-13 Esd保護電路以及半導體裝置
US18/183,164 US20230307439A1 (en) 2022-03-24 2023-03-14 Esd protection circuit and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022047837A JP7774480B2 (ja) 2022-03-24 2022-03-24 Ｅｓｄ保護回路及び半導体装置

Publications (3)

Publication Number Publication Date
JP2023141491A JP2023141491A (ja) 2023-10-05
JP2023141491A5 JP2023141491A5 (enExample) 2025-02-18
JP7774480B2 true JP7774480B2 (ja) 2025-11-21

Family

ID=88205290

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022047837A Active JP7774480B2 (ja) 2022-03-24 2022-03-24 Ｅｓｄ保護回路及び半導体装置

Country Status (1)

Country Link
JP (1) JP7774480B2 (enExample)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002305254A (ja) 2001-04-05 2002-10-18 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2008004703A (ja) 2006-06-21 2008-01-10 Ricoh Co Ltd 半導体装置及び半導体装置の製造方法
JP2008098587A (ja) 2006-10-16 2008-04-24 Toshiba Corp Ｅｓｄ保護回路
JP2010140946A (ja) 2008-12-09 2010-06-24 Sony Corp 半導体装置、半導体装置の製造方法、静電放電保護素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002305254A (ja) 2001-04-05 2002-10-18 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2008004703A (ja) 2006-06-21 2008-01-10 Ricoh Co Ltd 半導体装置及び半導体装置の製造方法
JP2008098587A (ja) 2006-10-16 2008-04-24 Toshiba Corp Ｅｓｄ保護回路
JP2010140946A (ja) 2008-12-09 2010-06-24 Sony Corp 半導体装置、半導体装置の製造方法、静電放電保護素子

Also Published As

Publication number Publication date
JP2023141491A (ja) 2023-10-05

Similar Documents

Publication Publication Date Title
US9263428B2 (en) Diode biased ESD protection device and method
US8198651B2 (en) Electro static discharge protection device
US6566715B1 (en) Substrate-triggered technique for on-chip ESD protection circuit
US8841727B1 (en) Circuit with electrostatic discharge protection
US6777721B1 (en) SCR device for ESD protection
CN101207121B (zh) 静电放电防护电路
US8143673B1 (en) Circuit with electrostatic discharge protection
US6433979B1 (en) Electrostatic discharge protection device using semiconductor controlled rectifier
JP2006523965A (ja) シリコンオンインシュレータ技術を対象とする静電放電（ｅｓｄ）保護用低電圧シリコン制御整流器（ｓｃｒ）
US7842970B2 (en) ESD protection device structure
US7092227B2 (en) Electrostatic discharge protection circuit with active device
WO2010029672A1 (ja) 静電放電保護回路を備えた半導体装置
US6455898B1 (en) Electrostatic discharge input protection for reducing input resistance
US20050224882A1 (en) Low trigger voltage esd nmosfet triple-well cmos devices
KR101566024B1 (ko) 반도체 디바이스
US6466423B1 (en) Electrostatic discharge protection device for mixed voltage application
CN101326638A (zh) 用于静电放电保护的防护墙结构
US7098522B2 (en) High voltage device with ESD protection
JP7774480B2 (ja) Ｅｓｄ保護回路及び半導体装置
US20230307439A1 (en) Esd protection circuit and semiconductor device
JP2023141490A (ja) Ｅｓｄ保護回路及び半導体装置
US20020060345A1 (en) Esd protection circuit triggered by low voltage
KR100357191B1 (ko) 메탈 커플링 커패시터를 이용한 이에스디 보호 회로
KR100612948B1 (ko) 낮은 항복전압을 갖는 정전기 보호회로의 트랜지스터
EP0568341A2 (en) Electrostatic discharge protection structure

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250207

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20250207

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20250911

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20251014

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20251028

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20251104

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20251111

R150 Certificate of patent or registration of utility model

Ref document number: 7774480

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150