JP7771082B2 - 分流レスガス投与 - Google Patents

分流レスガス投与

Info

Publication number
JP7771082B2
JP7771082B2 JP2022564144A JP2022564144A JP7771082B2 JP 7771082 B2 JP7771082 B2 JP 7771082B2 JP 2022564144 A JP2022564144 A JP 2022564144A JP 2022564144 A JP2022564144 A JP 2022564144A JP 7771082 B2 JP7771082 B2 JP 7771082B2
Authority
JP
Japan
Prior art keywords
flow
lcv
mode
pressure sensor
control valve
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022564144A
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English (en)
Japanese (ja)
Other versions
JPWO2021216352A5 (https=
JP2023523921A5 (https=
JP2023523921A (ja
Inventor
スタンプ・ジョン・フォルデン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2023523921A publication Critical patent/JP2023523921A/ja
Publication of JPWO2021216352A5 publication Critical patent/JPWO2021216352A5/ja
Publication of JP2023523921A5 publication Critical patent/JP2023523921A5/ja
Priority to JP2025186007A priority Critical patent/JP2026027337A/ja
Application granted granted Critical
Publication of JP7771082B2 publication Critical patent/JP7771082B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D7/00—Control of flow
    • G05D7/06—Control of flow characterised by the use of electric means
    • G05D7/0617—Control of flow characterised by the use of electric means specially adapted for fluid materials
    • G05D7/0629—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means
    • G05D7/0635—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means
    • G05D7/0641—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means using a plurality of throttling means
    • G05D7/0647—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means using a plurality of throttling means the plurality of throttling means being arranged in series
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/05—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects
    • G01F1/34—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects by measuring pressure or differential pressure
    • G01F1/50—Correcting or compensating means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Chemical Vapour Deposition (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
JP2022564144A 2020-04-24 2021-04-15 分流レスガス投与 Active JP7771082B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025186007A JP2026027337A (ja) 2020-04-24 2025-11-05 分流レスガス投与

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202063015243P 2020-04-24 2020-04-24
US63/015,243 2020-04-24
US202062706328P 2020-08-10 2020-08-10
US62/706,328 2020-08-10
PCT/US2021/027555 WO2021216352A1 (en) 2020-04-24 2021-04-15 Divertless gas-dosing

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025186007A Division JP2026027337A (ja) 2020-04-24 2025-11-05 分流レスガス投与

Publications (4)

Publication Number Publication Date
JP2023523921A JP2023523921A (ja) 2023-06-08
JPWO2021216352A5 JPWO2021216352A5 (https=) 2024-04-23
JP2023523921A5 JP2023523921A5 (https=) 2024-04-23
JP7771082B2 true JP7771082B2 (ja) 2025-11-17

Family

ID=78270147

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2022564144A Active JP7771082B2 (ja) 2020-04-24 2021-04-15 分流レスガス投与
JP2025186007A Pending JP2026027337A (ja) 2020-04-24 2025-11-05 分流レスガス投与

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025186007A Pending JP2026027337A (ja) 2020-04-24 2025-11-05 分流レスガス投与

Country Status (5)

Country Link
US (1) US12410517B2 (https=)
JP (2) JP7771082B2 (https=)
KR (1) KR20230007427A (https=)
CN (1) CN115443348A (https=)
WO (1) WO2021216352A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021216352A1 (en) 2020-04-24 2021-10-28 Lam Research Corporation Divertless gas-dosing

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012184481A (ja) 2011-03-07 2012-09-27 Ulvac Japan Ltd 真空一貫基板処理装置及び成膜方法
WO2014065233A1 (ja) 2012-10-22 2014-05-01 大陽日酸株式会社 セレン化水素混合ガスの供給方法及び供給装置
JP2015191957A (ja) 2014-03-27 2015-11-02 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
JP2020059910A (ja) 2018-10-12 2020-04-16 東京エレクトロン株式会社 原料ガス供給装置、成膜装置及び原料ガス供給方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4964484A (https=) * 1972-10-20 1974-06-21
US7628860B2 (en) 2004-04-12 2009-12-08 Mks Instruments, Inc. Pulsed mass flow delivery system and method
KR101161020B1 (ko) * 2006-03-30 2012-07-02 미쯔이 죠센 가부시키가이샤 원자층 성장 장치
JP4964484B2 (ja) 2006-03-31 2012-06-27 ステラケミファ株式会社 微細加工処理方法
JP2013151720A (ja) * 2012-01-25 2013-08-08 Ulvac Japan Ltd 真空成膜装置
JP6359913B2 (ja) * 2014-08-12 2018-07-18 東京エレクトロン株式会社 処理装置
JP6533740B2 (ja) * 2015-12-15 2019-06-19 Ckd株式会社 ガス流量監視方法及びガス流量監視装置
US10515783B2 (en) * 2016-02-23 2019-12-24 Lam Research Corporation Flow through line charge volume
JP7107648B2 (ja) * 2017-07-11 2022-07-27 株式会社堀場エステック 流体制御装置、流体制御システム、流体制御方法、及び、流体制御装置用プログラム
US10947621B2 (en) * 2017-10-23 2021-03-16 Applied Materials, Inc. Low vapor pressure chemical delivery
WO2021216352A1 (en) 2020-04-24 2021-10-28 Lam Research Corporation Divertless gas-dosing

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012184481A (ja) 2011-03-07 2012-09-27 Ulvac Japan Ltd 真空一貫基板処理装置及び成膜方法
WO2014065233A1 (ja) 2012-10-22 2014-05-01 大陽日酸株式会社 セレン化水素混合ガスの供給方法及び供給装置
JP2015191957A (ja) 2014-03-27 2015-11-02 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
JP2020059910A (ja) 2018-10-12 2020-04-16 東京エレクトロン株式会社 原料ガス供給装置、成膜装置及び原料ガス供給方法

Also Published As

Publication number Publication date
US12410517B2 (en) 2025-09-09
US20230167550A1 (en) 2023-06-01
KR20230007427A (ko) 2023-01-12
JP2026027337A (ja) 2026-02-18
TW202208669A (zh) 2022-03-01
JP2023523921A (ja) 2023-06-08
CN115443348A (zh) 2022-12-06
WO2021216352A1 (en) 2021-10-28

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