CN115443348A - 无转向气体投配 - Google Patents

无转向气体投配 Download PDF

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Publication number
CN115443348A
CN115443348A CN202180030493.1A CN202180030493A CN115443348A CN 115443348 A CN115443348 A CN 115443348A CN 202180030493 A CN202180030493 A CN 202180030493A CN 115443348 A CN115443348 A CN 115443348A
Authority
CN
China
Prior art keywords
flow
lcv
control valve
pressure sensor
mode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180030493.1A
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English (en)
Chinese (zh)
Inventor
约翰·福尔登·斯顿夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of CN115443348A publication Critical patent/CN115443348A/zh
Pending legal-status Critical Current

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557Pulsed pressure or control pressure
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561Gas plumbing upstream of the reaction chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523Pulsed gas flow or change of composition over time
    • C23C16/45525Atomic layer deposition [ALD]
    • C23C16/45544Atomic layer deposition [ALD] characterized by the apparatus
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52Controlling or regulating the coating process
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05DSYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D7/00Control of flow
    • G05D7/06Control of flow characterised by the use of electric means
    • G05D7/0617Control of flow characterised by the use of electric means specially adapted for fluid materials
    • G05D7/0629Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means
    • G05D7/0635Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means
    • G05D7/0641Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means using a plurality of throttling means
    • G05D7/0647Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means using a plurality of throttling means the plurality of throttling means being arranged in series
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01FMEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/05Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects
    • G01F1/34Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects by measuring pressure or differential pressure
    • G01F1/50Correcting or compensating means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Chemical Vapour Deposition (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
CN202180030493.1A 2020-04-24 2021-04-15 无转向气体投配 Pending CN115443348A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202063015243P 2020-04-24 2020-04-24
US63/015,243 2020-04-24
US202062706328P 2020-08-10 2020-08-10
US62/706,328 2020-08-10
PCT/US2021/027555 WO2021216352A1 (en) 2020-04-24 2021-04-15 Divertless gas-dosing

Publications (1)

Publication Number Publication Date
CN115443348A true CN115443348A (zh) 2022-12-06

Family

ID=78270147

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180030493.1A Pending CN115443348A (zh) 2020-04-24 2021-04-15 无转向气体投配

Country Status (5)

Country Link
US (1) US12410517B2 (https=)
JP (2) JP7771082B2 (https=)
KR (1) KR20230007427A (https=)
CN (1) CN115443348A (https=)
WO (1) WO2021216352A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12410517B2 (en) 2020-04-24 2025-09-09 Lam Research Corporation Divertless gas-dosing

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4964484A (https=) * 1972-10-20 1974-06-21
US7628860B2 (en) 2004-04-12 2009-12-08 Mks Instruments, Inc. Pulsed mass flow delivery system and method
KR101161020B1 (ko) * 2006-03-30 2012-07-02 미쯔이 죠센 가부시키가이샤 원자층 성장 장치
JP4964484B2 (ja) 2006-03-31 2012-06-27 ステラケミファ株式会社 微細加工処理方法
JP5750281B2 (ja) 2011-03-07 2015-07-15 株式会社アルバック 真空一貫基板処理装置及び成膜方法
JP2013151720A (ja) * 2012-01-25 2013-08-08 Ulvac Japan Ltd 真空成膜装置
KR101661483B1 (ko) 2012-10-22 2016-09-30 다이요 닛산 가부시키가이샤 셀렌화수소 혼합 가스의 공급 방법 및 공급 장치
JP6413293B2 (ja) * 2014-03-27 2018-10-31 東京エレクトロン株式会社 成膜方法及び記憶媒体
JP6359913B2 (ja) * 2014-08-12 2018-07-18 東京エレクトロン株式会社 処理装置
JP6533740B2 (ja) * 2015-12-15 2019-06-19 Ckd株式会社 ガス流量監視方法及びガス流量監視装置
US10515783B2 (en) * 2016-02-23 2019-12-24 Lam Research Corporation Flow through line charge volume
JP7107648B2 (ja) * 2017-07-11 2022-07-27 株式会社堀場エステック 流体制御装置、流体制御システム、流体制御方法、及び、流体制御装置用プログラム
US10947621B2 (en) * 2017-10-23 2021-03-16 Applied Materials, Inc. Low vapor pressure chemical delivery
JP7182988B2 (ja) 2018-10-12 2022-12-05 東京エレクトロン株式会社 原料ガス供給装置、成膜装置及び原料ガス供給方法
WO2021216352A1 (en) 2020-04-24 2021-10-28 Lam Research Corporation Divertless gas-dosing

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12410517B2 (en) 2020-04-24 2025-09-09 Lam Research Corporation Divertless gas-dosing

Also Published As

Publication number Publication date
US12410517B2 (en) 2025-09-09
US20230167550A1 (en) 2023-06-01
KR20230007427A (ko) 2023-01-12
JP2026027337A (ja) 2026-02-18
TW202208669A (zh) 2022-03-01
JP2023523921A (ja) 2023-06-08
JP7771082B2 (ja) 2025-11-17
WO2021216352A1 (en) 2021-10-28

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