JP7767466B2 - 光電変換装置、光電変換システム、および移動体 - Google Patents

光電変換装置、光電変換システム、および移動体

Info

Publication number
JP7767466B2
JP7767466B2 JP2023572271A JP2023572271A JP7767466B2 JP 7767466 B2 JP7767466 B2 JP 7767466B2 JP 2023572271 A JP2023572271 A JP 2023572271A JP 2023572271 A JP2023572271 A JP 2023572271A JP 7767466 B2 JP7767466 B2 JP 7767466B2
Authority
JP
Japan
Prior art keywords
photoelectric conversion
region
conversion device
light
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023572271A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023132001A5 (enExample
JPWO2023132001A1 (enExample
Inventor
裕介 大貫
旬史 岩田
一 池田
靖司 松野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of JPWO2023132001A1 publication Critical patent/JPWO2023132001A1/ja
Publication of JPWO2023132001A5 publication Critical patent/JPWO2023132001A5/ja
Application granted granted Critical
Publication of JP7767466B2 publication Critical patent/JP7767466B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/705—Pixels for depth measurement, e.g. RGBZ

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP2023572271A 2022-01-05 2022-01-05 光電変換装置、光電変換システム、および移動体 Active JP7767466B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/000069 WO2023132001A1 (ja) 2022-01-05 2022-01-05 光電変換装置、光電変換システム、および移動体

Publications (3)

Publication Number Publication Date
JPWO2023132001A1 JPWO2023132001A1 (enExample) 2023-07-13
JPWO2023132001A5 JPWO2023132001A5 (enExample) 2025-01-08
JP7767466B2 true JP7767466B2 (ja) 2025-11-11

Family

ID=87073440

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023572271A Active JP7767466B2 (ja) 2022-01-05 2022-01-05 光電変換装置、光電変換システム、および移動体

Country Status (3)

Country Link
US (1) US20240355857A1 (enExample)
JP (1) JP7767466B2 (enExample)
WO (1) WO2023132001A1 (enExample)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011151461A (ja) 2010-01-19 2011-08-04 Hoya Corp 固体撮像素子
CN113473050A (zh) 2020-03-31 2021-10-01 佳能株式会社 光电转换装置、光电转换系统和移动物体
JP2021176154A (ja) 2018-07-18 2021-11-04 ソニーセミコンダクタソリューションズ株式会社 受光素子および測距モジュール

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011151461A (ja) 2010-01-19 2011-08-04 Hoya Corp 固体撮像素子
JP2021176154A (ja) 2018-07-18 2021-11-04 ソニーセミコンダクタソリューションズ株式会社 受光素子および測距モジュール
CN113473050A (zh) 2020-03-31 2021-10-01 佳能株式会社 光电转换装置、光电转换系统和移动物体

Also Published As

Publication number Publication date
WO2023132001A1 (ja) 2023-07-13
JPWO2023132001A1 (enExample) 2023-07-13
US20240355857A1 (en) 2024-10-24

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