JP7756092B2 - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JP7756092B2
JP7756092B2 JP2022547496A JP2022547496A JP7756092B2 JP 7756092 B2 JP7756092 B2 JP 7756092B2 JP 2022547496 A JP2022547496 A JP 2022547496A JP 2022547496 A JP2022547496 A JP 2022547496A JP 7756092 B2 JP7756092 B2 JP 7756092B2
Authority
JP
Japan
Prior art keywords
layer
semiconductor
semiconductor layer
conductive layer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022547496A
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English (en)
Japanese (ja)
Other versions
JPWO2022054600A1 (https=
Inventor
侑也 田村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of JPWO2022054600A1 publication Critical patent/JPWO2022054600A1/ja
Application granted granted Critical
Publication of JP7756092B2 publication Critical patent/JP7756092B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/045—Manufacture or treatment of PN junction diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/411—PN diodes having planar bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP2022547496A 2020-09-08 2021-08-26 半導体装置 Active JP7756092B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020150774 2020-09-08
JP2020150774 2020-09-08
PCT/JP2021/031393 WO2022054600A1 (ja) 2020-09-08 2021-08-26 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2022054600A1 JPWO2022054600A1 (https=) 2022-03-17
JP7756092B2 true JP7756092B2 (ja) 2025-10-17

Family

ID=80632326

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022547496A Active JP7756092B2 (ja) 2020-09-08 2021-08-26 半導体装置

Country Status (5)

Country Link
US (2) US12532535B2 (https=)
JP (1) JP7756092B2 (https=)
CN (1) CN116057688A (https=)
DE (1) DE112021004164T5 (https=)
WO (1) WO2022054600A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080048219A1 (en) 2005-08-25 2008-02-28 Brar Berinder P S Semiconductor Device Having Substrate-Driven Field-Effect Transistor and Schottky Diode and Method of Forming the Same
JP2009164158A (ja) 2007-12-28 2009-07-23 Panasonic Corp 半導体装置及びその製造方法
JP2013038409A (ja) 2011-07-15 2013-02-21 Internatl Rectifier Corp 集積されたダイオードを備える複合半導体装置
JP2019165172A (ja) 2018-03-20 2019-09-26 富士通株式会社 半導体装置及びその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5319084B2 (ja) * 2007-06-19 2013-10-16 ルネサスエレクトロニクス株式会社 半導体装置
JP2009124001A (ja) * 2007-11-16 2009-06-04 Furukawa Electric Co Ltd:The ＧａＮ系半導体装置
JP2009182107A (ja) * 2008-01-30 2009-08-13 Furukawa Electric Co Ltd:The 半導体装置
JP4933513B2 (ja) 2008-10-14 2012-05-16 日本電信電話株式会社 窒化物半導体成長用基板
JP2014027253A (ja) 2012-06-22 2014-02-06 Toshiba Corp 整流回路
JP2020150774A (ja) 2019-03-15 2020-09-17 株式会社オートネットワーク技術研究所 車両用ワイヤハーネス
CN111312712A (zh) 2020-02-25 2020-06-19 英诺赛科（珠海）科技有限公司 半导体器件及其制造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080048219A1 (en) 2005-08-25 2008-02-28 Brar Berinder P S Semiconductor Device Having Substrate-Driven Field-Effect Transistor and Schottky Diode and Method of Forming the Same
JP2009164158A (ja) 2007-12-28 2009-07-23 Panasonic Corp 半導体装置及びその製造方法
JP2013038409A (ja) 2011-07-15 2013-02-21 Internatl Rectifier Corp 集積されたダイオードを備える複合半導体装置
JP2019165172A (ja) 2018-03-20 2019-09-26 富士通株式会社 半導体装置及びその製造方法

Also Published As

Publication number Publication date
WO2022054600A1 (ja) 2022-03-17
DE112021004164T5 (de) 2023-06-01
US20260123032A1 (en) 2026-04-30
US12532535B2 (en) 2026-01-20
CN116057688A (zh) 2023-05-02
US20230317716A1 (en) 2023-10-05
JPWO2022054600A1 (https=) 2022-03-17

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