JP7755553B2 - 分析装置、分析方法及び分析用プログラム - Google Patents

分析装置、分析方法及び分析用プログラム

Info

Publication number
JP7755553B2
JP7755553B2 JP2022115468A JP2022115468A JP7755553B2 JP 7755553 B2 JP7755553 B2 JP 7755553B2 JP 2022115468 A JP2022115468 A JP 2022115468A JP 2022115468 A JP2022115468 A JP 2022115468A JP 7755553 B2 JP7755553 B2 JP 7755553B2
Authority
JP
Japan
Prior art keywords
unit
measurement unit
workpiece
output value
time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022115468A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024013408A5 (enExample
JP2024013408A (ja
Inventor
美耶子 波田
基延 高橋
雅和 南
有平 坂口
徹 志水
哲雄 藤井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Horiba Stec Co Ltd
Original Assignee
Horiba Stec Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Horiba Stec Co Ltd filed Critical Horiba Stec Co Ltd
Priority to JP2022115468A priority Critical patent/JP7755553B2/ja
Priority to KR1020230091171A priority patent/KR20240012319A/ko
Priority to US18/222,029 priority patent/US20240030013A1/en
Priority to EP23186076.8A priority patent/EP4310481A1/en
Priority to CN202310890023.3A priority patent/CN117434026A/zh
Priority to TW112127089A priority patent/TW202411632A/zh
Publication of JP2024013408A publication Critical patent/JP2024013408A/ja
Publication of JP2024013408A5 publication Critical patent/JP2024013408A5/ja
Application granted granted Critical
Publication of JP7755553B2 publication Critical patent/JP7755553B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32981—Gas analysis
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/22—Measuring arrangements characterised by the use of optical techniques for measuring depth
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/39—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using tunable lasers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/028—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness by measuring lateral position of a boundary of the object
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01—Arrangements or apparatus for facilitating the optical investigation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/27—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection ; circuits for computing concentration
    • G01N21/272—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection ; circuits for computing concentration for following a reaction, e.g. for determining photometrically a reaction rate (photometric cinetic analysis)
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01—Arrangements or apparatus for facilitating the optical investigation
    • G01N2021/0106—General arrangement of respective parts
    • G01N2021/0112—Apparatus in one mechanical, optical or electronic block
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/39—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using tunable lasers
    • G01N2021/391—Intracavity sample
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/39—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using tunable lasers
    • G01N2021/396—Type of laser source
    • G01N2021/399—Diode laser
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N2021/8411—Application to online plant, process monitoring
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01—Arrangements or apparatus for facilitating the optical investigation
    • G01N21/03—Cuvette constructions
    • G01N21/031—Multipass arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/75—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/12—Circuits of general importance; Signal processing
    • G01N2201/127—Calibration; base line adjustment; drift compensation
    • G01N2201/12707—Pre-test of apparatus, e.g. dark test, sensor test
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2445—Photon detectors for X-rays, light, e.g. photomultipliers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Drying Of Semiconductors (AREA)
  • General Factory Administration (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
JP2022115468A 2022-07-20 2022-07-20 分析装置、分析方法及び分析用プログラム Active JP7755553B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2022115468A JP7755553B2 (ja) 2022-07-20 2022-07-20 分析装置、分析方法及び分析用プログラム
KR1020230091171A KR20240012319A (ko) 2022-07-20 2023-07-13 분석 장치, 분석 방법 및 분석용 프로그램
US18/222,029 US20240030013A1 (en) 2022-07-20 2023-07-14 Analysis device, analysis method, and analysis program
EP23186076.8A EP4310481A1 (en) 2022-07-20 2023-07-18 Analysis device, analysis method, and analysis program
CN202310890023.3A CN117434026A (zh) 2022-07-20 2023-07-19 分析装置、分析方法及计算机可读的存储介质
TW112127089A TW202411632A (zh) 2022-07-20 2023-07-20 分析裝置、關聯資料的製作方法、分析方法及分析用程式

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022115468A JP7755553B2 (ja) 2022-07-20 2022-07-20 分析装置、分析方法及び分析用プログラム

Publications (3)

Publication Number Publication Date
JP2024013408A JP2024013408A (ja) 2024-02-01
JP2024013408A5 JP2024013408A5 (enExample) 2025-01-28
JP7755553B2 true JP7755553B2 (ja) 2025-10-16

Family

ID=87419142

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022115468A Active JP7755553B2 (ja) 2022-07-20 2022-07-20 分析装置、分析方法及び分析用プログラム

Country Status (6)

Country Link
US (1) US20240030013A1 (enExample)
EP (1) EP4310481A1 (enExample)
JP (1) JP7755553B2 (enExample)
KR (1) KR20240012319A (enExample)
CN (1) CN117434026A (enExample)
TW (1) TW202411632A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12480884B2 (en) * 2023-01-17 2025-11-25 Tokyo Electron Limited Analysis apparatus, bonding system, and analysis method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022118694A1 (ja) 2020-12-01 2022-06-09 株式会社堀場エステック ガス分析装置及びガス分析方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6224057A (ja) 1985-07-24 1987-02-02 Toshiba Mach Co Ltd ２系列歯車駆動系の歯車シフト機構
US5711849A (en) * 1995-05-03 1998-01-27 Daniel L. Flamm Process optimization in gas phase dry etching
US5963336A (en) * 1995-10-10 1999-10-05 American Air Liquide Inc. Chamber effluent monitoring system and semiconductor processing system comprising absorption spectroscopy measurement system, and methods of use
JP2002170812A (ja) 2000-12-04 2002-06-14 Matsushita Electric Ind Co Ltd プラズマエッチングの終点検出方法および装置、並びにプラズマエッチング装置
TWI264043B (en) * 2002-10-01 2006-10-11 Tokyo Electron Ltd Method and system for analyzing data from a plasma process
US7645704B2 (en) * 2003-09-17 2010-01-12 Texas Instruments Incorporated Methods and apparatus of etch process control in fabrications of microstructures
JP2006066540A (ja) * 2004-08-25 2006-03-09 Tokyo Electron Ltd 薄膜形成装置の洗浄方法及び薄膜形成装置
JP2012032239A (ja) * 2010-07-29 2012-02-16 Horiba Ltd 試料検査装置及び試料検査方法
JP6173851B2 (ja) * 2013-09-20 2017-08-02 株式会社日立ハイテクノロジーズ 分析方法およびプラズマエッチング装置
JP6220319B2 (ja) * 2014-07-17 2017-10-25 株式会社日立ハイテクノロジーズ データ解析方法及びプラズマエッチング方法並びにプラズマ処理装置
JP6688205B2 (ja) * 2015-11-13 2020-04-28 株式会社堀場製作所 試料分析装置及び試料分析プログラム
JP7088732B2 (ja) * 2018-04-27 2022-06-21 株式会社堀場エステック 基板処理装置及び基板処理装置用プログラム
JP7565080B2 (ja) 2021-01-28 2024-10-10 株式会社サンセイアールアンドディ 遊技機

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022118694A1 (ja) 2020-12-01 2022-06-09 株式会社堀場エステック ガス分析装置及びガス分析方法

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Lang N et al，On treatment of ultra-low-k SiCOH in CF4 plasmas: correlation between the concentration of etching products and etch rate，Applied Physics B，2015年03月17日，Vol.119, No.1，219-226
Lang N et al，Wafer2wafer etch monitor via in situ QCLAS，IEEE Transactions on Plasma Science，IEEE，2009年12月01日，Vol.37, No.12，2335-2341，IEL Online (IEEE Xplore)
Zimmermann S et al，The role of plasma analytics in leading-edge semiconductor technologies，Contributions to Plasma Physics，2018年02月14日，Vol.58, No.5，367-376

Also Published As

Publication number Publication date
US20240030013A1 (en) 2024-01-25
EP4310481A1 (en) 2024-01-24
TW202411632A (zh) 2024-03-16
KR20240012319A (ko) 2024-01-29
CN117434026A (zh) 2024-01-23
JP2024013408A (ja) 2024-02-01

Similar Documents

Publication Publication Date Title
JP4938948B2 (ja) プラズマプロセス中のプロセスパラメータを決定するためのプロセスモニタおよびその方法
KR100966390B1 (ko) 에칭 모니터 장치, 에칭 장치 및 에칭 깊이 검출 방법
KR100515548B1 (ko) 에칭 종점 검출 방법
JP2018096974A (ja) 分析装置、分析装置用プログラム及び分析方法
JP2010034582A (ja) エッチング深さの検出方法並びにエッチングモニター装置及びエッチング装置
JP7708750B2 (ja) 分析装置、分析装置用プログラム及び分析方法
JP7755553B2 (ja) 分析装置、分析方法及び分析用プログラム
WO2022118694A1 (ja) ガス分析装置及びガス分析方法
TWI766116B (zh) 膜厚計測裝置、膜厚計測方法、膜厚計測程式及記錄膜厚計測程式之記錄媒體
WO2005038436A2 (en) System and method for cavity ring-down spectroscopy using continuously varying continuous wave excitation
JPH0915140A (ja) 楕円偏光測定方法、楕円偏光計及びそのような方法及び装置を使用して層の生成を制御する装置
JP4031712B2 (ja) 半導体多層膜の分光計測方法および分光計測装置
KR20030000274A (ko) 반도체 제조공정에서 실시간 플라즈마 측정과 박막분석을위한 다채널 분광분석기
JPH0737958A (ja) 半導体処理工程監視装置
KR20250179652A (ko) 프로세스 평가 장치, 프로세스 평가 방법, 및 프로세스 평가 프로그램
US6450683B1 (en) Optical temperature measurement as an in situ monitor of etch rate
JP2000131228A (ja) 紫外線と近赤外線を使用した分光測定方法
TW202429063A (zh) 用於基板的經相位解析的光學計量
JPH01111335A (ja) ドライエツチングの終点検出方法および装置
WO2001020662A1 (en) Device for mapping composition ratio of specific element which compound semiconductor wafer contains
JPH04280650A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20241220

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250120

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20250623

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250717

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250821

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250930

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20251003

R150 Certificate of patent or registration of utility model

Ref document number: 7755553

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150