JP7754653B2 - 垂直共振器型発光素子 - Google Patents

垂直共振器型発光素子

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Publication number
JP7754653B2
JP7754653B2 JP2021127606A JP2021127606A JP7754653B2 JP 7754653 B2 JP7754653 B2 JP 7754653B2 JP 2021127606 A JP2021127606 A JP 2021127606A JP 2021127606 A JP2021127606 A JP 2021127606A JP 7754653 B2 JP7754653 B2 JP 7754653B2
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Japan
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layer
substrate
top surface
offset
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JP2021127606A
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English (en)
Japanese (ja)
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JP2023022627A5 (enExample
JP2023022627A (ja
Inventor
大 倉本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
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Stanley Electric Co Ltd
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Publication date
Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Priority to JP2021127606A priority Critical patent/JP7754653B2/ja
Priority to EP22852881.6A priority patent/EP4383485A4/en
Priority to CN202280054354.7A priority patent/CN117795796A/zh
Priority to US18/292,937 priority patent/US20250167522A1/en
Priority to PCT/JP2022/028640 priority patent/WO2023013457A1/ja
Publication of JP2023022627A publication Critical patent/JP2023022627A/ja
Publication of JP2023022627A5 publication Critical patent/JP2023022627A5/ja
Application granted granted Critical
Publication of JP7754653B2 publication Critical patent/JP7754653B2/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18355—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a defined polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18388—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2021127606A 2021-08-03 2021-08-03 垂直共振器型発光素子 Active JP7754653B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2021127606A JP7754653B2 (ja) 2021-08-03 2021-08-03 垂直共振器型発光素子
EP22852881.6A EP4383485A4 (en) 2021-08-03 2022-07-25 VERTICAL RESONATOR TYPE LIGHT EMITTING ELEMENT
CN202280054354.7A CN117795796A (zh) 2021-08-03 2022-07-25 垂直谐振器型发光元件
US18/292,937 US20250167522A1 (en) 2021-08-03 2022-07-25 Vertical cavity light-emitting element
PCT/JP2022/028640 WO2023013457A1 (ja) 2021-08-03 2022-07-25 垂直共振器型発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021127606A JP7754653B2 (ja) 2021-08-03 2021-08-03 垂直共振器型発光素子

Publications (3)

Publication Number Publication Date
JP2023022627A JP2023022627A (ja) 2023-02-15
JP2023022627A5 JP2023022627A5 (enExample) 2024-07-19
JP7754653B2 true JP7754653B2 (ja) 2025-10-15

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021127606A Active JP7754653B2 (ja) 2021-08-03 2021-08-03 垂直共振器型発光素子

Country Status (5)

Country Link
US (1) US20250167522A1 (enExample)
EP (1) EP4383485A4 (enExample)
JP (1) JP7754653B2 (enExample)
CN (1) CN117795796A (enExample)
WO (1) WO2023013457A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7581248B2 (ja) * 2020-01-08 2024-11-12 スタンレー電気株式会社 垂直共振器型発光素子
TW202504193A (zh) * 2023-03-03 2025-01-16 日商索尼集團公司 面發光雷射
JP2024131244A (ja) * 2023-03-15 2024-09-30 スタンレー電気株式会社 垂直共振器型発光素子
DE102023125625A1 (de) * 2023-09-21 2025-03-27 Ams-Osram International Gmbh Oberflächenemitter und Verfahren zum Herstellen eines Oberflächenemitters

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100128749A1 (en) 2008-11-21 2010-05-27 Vertilas Gmbh Vertical-Cavity Surface-Emitting Semiconductor Laser Diode And Method For The Manufacture Thereof
JP2011082459A (ja) 2009-10-09 2011-04-21 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体レーザ素子
JP2011096856A (ja) 2009-10-29 2011-05-12 Sony Corp 半導体レーザ
US20110182317A1 (en) 2008-06-30 2011-07-28 Osram Opto Semiconductors Gmbh Surface emitting semiconductor laser having a plurality of active zones
US20150311673A1 (en) 2014-04-29 2015-10-29 Princeton Optronics Inc. Polarization Control in High Peak Power, High Brightness VCSEL
WO2021124968A1 (ja) 2019-12-20 2021-06-24 ソニーグループ株式会社 垂直共振器型面発光レーザ素子、垂直共振器型面発光レーザ素子アレイ、垂直共振器型面発光レーザモジュール及び垂直共振器型面発光レーザ素子の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2875929B2 (ja) * 1992-10-09 1999-03-31 シャープ株式会社 半導体レーザ素子およびその製造方法
JP6664688B2 (ja) 2015-11-19 2020-03-13 学校法人 名城大学 垂直共振器型発光素子
CN110858702B (zh) * 2018-08-22 2024-12-27 三星电子株式会社 背面发光式光源阵列器件和具有其的电子装置
CN111162451A (zh) * 2019-12-26 2020-05-15 浙江博升光电科技有限公司 底部发射垂直腔面发射激光器

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110182317A1 (en) 2008-06-30 2011-07-28 Osram Opto Semiconductors Gmbh Surface emitting semiconductor laser having a plurality of active zones
US20100128749A1 (en) 2008-11-21 2010-05-27 Vertilas Gmbh Vertical-Cavity Surface-Emitting Semiconductor Laser Diode And Method For The Manufacture Thereof
JP2011082459A (ja) 2009-10-09 2011-04-21 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体レーザ素子
JP2011096856A (ja) 2009-10-29 2011-05-12 Sony Corp 半導体レーザ
US20150311673A1 (en) 2014-04-29 2015-10-29 Princeton Optronics Inc. Polarization Control in High Peak Power, High Brightness VCSEL
WO2021124968A1 (ja) 2019-12-20 2021-06-24 ソニーグループ株式会社 垂直共振器型面発光レーザ素子、垂直共振器型面発光レーザ素子アレイ、垂直共振器型面発光レーザモジュール及び垂直共振器型面発光レーザ素子の製造方法

Also Published As

Publication number Publication date
EP4383485A1 (en) 2024-06-12
WO2023013457A1 (ja) 2023-02-09
EP4383485A4 (en) 2025-09-03
US20250167522A1 (en) 2025-05-22
CN117795796A (zh) 2024-03-29
JP2023022627A (ja) 2023-02-15

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