JP7748373B2 - 半導体装置、半導体装置の作製方法 - Google Patents

半導体装置、半導体装置の作製方法

Info

Publication number
JP7748373B2
JP7748373B2 JP2022546730A JP2022546730A JP7748373B2 JP 7748373 B2 JP7748373 B2 JP 7748373B2 JP 2022546730 A JP2022546730 A JP 2022546730A JP 2022546730 A JP2022546730 A JP 2022546730A JP 7748373 B2 JP7748373 B2 JP 7748373B2
Authority
JP
Japan
Prior art keywords
insulator
oxide
conductor
oxygen
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022546730A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2022049459A5 (ja
JPWO2022049459A1 (https=
Inventor
舜平 山崎
安弘 神保
寛司 國武
勇司 恵木
正弘 高橋
峻太郎 河内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of JPWO2022049459A1 publication Critical patent/JPWO2022049459A1/ja
Publication of JPWO2022049459A5 publication Critical patent/JPWO2022049459A5/ja
Priority to JP2025155641A priority Critical patent/JP2025181908A/ja
Application granted granted Critical
Publication of JP7748373B2 publication Critical patent/JP7748373B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/10—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2022546730A 2020-09-07 2021-08-26 半導体装置、半導体装置の作製方法 Active JP7748373B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025155641A JP2025181908A (ja) 2020-09-07 2025-09-19 容量素子の作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2020150192 2020-09-07
JP2020150192 2020-09-07
JP2020197135 2020-11-27
JP2020197135 2020-11-27
PCT/IB2021/057803 WO2022049459A1 (ja) 2020-09-07 2021-08-26 金属酸化物膜、半導体装置、およびその作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025155641A Division JP2025181908A (ja) 2020-09-07 2025-09-19 容量素子の作製方法

Publications (3)

Publication Number Publication Date
JPWO2022049459A1 JPWO2022049459A1 (https=) 2022-03-10
JPWO2022049459A5 JPWO2022049459A5 (ja) 2024-08-20
JP7748373B2 true JP7748373B2 (ja) 2025-10-02

Family

ID=80490700

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2022546730A Active JP7748373B2 (ja) 2020-09-07 2021-08-26 半導体装置、半導体装置の作製方法
JP2025155641A Pending JP2025181908A (ja) 2020-09-07 2025-09-19 容量素子の作製方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025155641A Pending JP2025181908A (ja) 2020-09-07 2025-09-19 容量素子の作製方法

Country Status (6)

Country Link
US (1) US20230269949A1 (https=)
JP (2) JP7748373B2 (https=)
KR (1) KR20230062567A (https=)
CN (1) CN116195037A (https=)
TW (1) TW202210653A (https=)
WO (1) WO2022049459A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115917038A (zh) 2020-08-21 2023-04-04 株式会社半导体能源研究所 半导体装置的制造方法
WO2022049449A1 (ja) 2020-09-06 2022-03-10 株式会社半導体エネルギー研究所 半導体装置、容量素子、およびその作製方法
TW202213766A (zh) 2020-09-22 2022-04-01 日商半導體能源研究所股份有限公司 鐵電體器件及半導體裝置
JP7604244B2 (ja) * 2021-01-20 2024-12-23 キヤノン株式会社 光電変換装置および機器
US12295163B2 (en) 2021-12-16 2025-05-06 Asm Ip Holding B.V. Formation of gate stacks comprising a threshold voltage tuning layer
CN115016676A (zh) * 2022-06-30 2022-09-06 业泓科技(成都)有限公司 屏幕下生物辨识模块及屏幕下生物辨识装置
WO2025245088A1 (en) * 2024-05-20 2025-11-27 Yale University Ferroelectric semiconductor devices and methods of fabricating thereof

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001200363A (ja) 1999-12-03 2001-07-24 Asm Microchemistry Oy テクスチャ加工されたキャパシタ電極上のコンフォーマル薄膜
JP2002373945A (ja) 2001-06-13 2002-12-26 Nec Corp 半導体装置およびその製造方法
JP2006310754A (ja) 2005-04-30 2006-11-09 Hynix Semiconductor Inc ナノ複合体の誘電膜、その誘電膜を有するキャパシタ及びその製造方法
US20120146196A1 (en) 2010-12-10 2012-06-14 Lee Kee-Jeung Method for fabricating semiconductor device
WO2013150920A1 (ja) 2012-04-05 2013-10-10 東京エレクトロン株式会社 半導体デバイスの製造方法及び基板処理システム
JP2019220516A (ja) 2018-06-15 2019-12-26 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
JP2020009960A (ja) 2018-07-11 2020-01-16 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001200363A (ja) 1999-12-03 2001-07-24 Asm Microchemistry Oy テクスチャ加工されたキャパシタ電極上のコンフォーマル薄膜
JP2002373945A (ja) 2001-06-13 2002-12-26 Nec Corp 半導体装置およびその製造方法
JP2006310754A (ja) 2005-04-30 2006-11-09 Hynix Semiconductor Inc ナノ複合体の誘電膜、その誘電膜を有するキャパシタ及びその製造方法
US20120146196A1 (en) 2010-12-10 2012-06-14 Lee Kee-Jeung Method for fabricating semiconductor device
WO2013150920A1 (ja) 2012-04-05 2013-10-10 東京エレクトロン株式会社 半導体デバイスの製造方法及び基板処理システム
JP2019220516A (ja) 2018-06-15 2019-12-26 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
JP2020009960A (ja) 2018-07-11 2020-01-16 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法

Also Published As

Publication number Publication date
US20230269949A1 (en) 2023-08-24
KR20230062567A (ko) 2023-05-09
TW202210653A (zh) 2022-03-16
WO2022049459A1 (ja) 2022-03-10
JP2025181908A (ja) 2025-12-11
CN116195037A (zh) 2023-05-30
JPWO2022049459A1 (https=) 2022-03-10

Similar Documents

Publication Publication Date Title
JP7748373B2 (ja) 半導体装置、半導体装置の作製方法
JP7678789B2 (ja) 金属酸化物の成膜方法
JP7741277B2 (ja) 半導体装置
JP7730973B2 (ja) 半導体装置の作製方法
JP7629446B2 (ja) 半導体装置
JP7713464B2 (ja) 強誘電体デバイス、半導体装置
JP7629856B2 (ja) 半導体装置
US20260122911A1 (en) Semiconductor device, capacitor, and manufacturing method thereof
JP7808724B2 (ja) 半導体装置の作製方法
JP7601761B2 (ja) 半導体装置の作製方法
JP2025061974A (ja) 半導体装置
TW202310425A (zh) 半導體裝置
JP2025164843A (ja) 記憶装置
JP7664171B2 (ja) 半導体装置
JP7805298B2 (ja) 半導体装置の作製方法
JP7821918B2 (ja) 半導体装置
JP7637110B2 (ja) 金属酸化物および半導体装置
WO2022084795A1 (ja) 強誘電体デバイス、および半導体装置
JP7777531B2 (ja) ハフニウムジルコニウム酸化物の製造方法
JP7796027B2 (ja) 半導体装置の作製方法
JP7710994B2 (ja) 半導体装置
JP7679305B2 (ja) 半導体装置
JP7776425B2 (ja) 半導体装置の作製方法
JP7778703B2 (ja) 半導体装置の作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240809

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240809

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250909

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20250919

R150 Certificate of patent or registration of utility model

Ref document number: 7748373

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150