JP7745011B2 - レーザ素子の製造方法および製造装置、レーザ素子並びに電子機器 - Google Patents

レーザ素子の製造方法および製造装置、レーザ素子並びに電子機器

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Publication number
JP7745011B2
JP7745011B2 JP2023576943A JP2023576943A JP7745011B2 JP 7745011 B2 JP7745011 B2 JP 7745011B2 JP 2023576943 A JP2023576943 A JP 2023576943A JP 2023576943 A JP2023576943 A JP 2023576943A JP 7745011 B2 JP7745011 B2 JP 7745011B2
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JP
Japan
Prior art keywords
semiconductor
manufacturing
laser element
ridge
scribing
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Active
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JP2023576943A
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English (en)
Japanese (ja)
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JPWO2023145763A1 (https=
JPWO2023145763A5 (https=
Inventor
賢太郎 村川
佳伸 川口
剛 神川
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Kyocera Corp
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Kyocera Corp
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Publication of JPWO2023145763A5 publication Critical patent/JPWO2023145763A5/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02375—Positioning of the laser chips
    • H01S5/0238—Positioning of the laser chips using marks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02315—Support members, e.g. bases or carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP2023576943A 2022-01-27 2023-01-25 レーザ素子の製造方法および製造装置、レーザ素子並びに電子機器 Active JP7745011B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022011292 2022-01-27
JP2022011292 2022-01-27
PCT/JP2023/002206 WO2023145763A1 (ja) 2022-01-27 2023-01-25 レーザ素子の製造方法および製造装置、レーザ素子並びに電子機器

Publications (3)

Publication Number Publication Date
JPWO2023145763A1 JPWO2023145763A1 (https=) 2023-08-03
JPWO2023145763A5 JPWO2023145763A5 (https=) 2024-10-04
JP7745011B2 true JP7745011B2 (ja) 2025-09-26

Family

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JP2023576943A Active JP7745011B2 (ja) 2022-01-27 2023-01-25 レーザ素子の製造方法および製造装置、レーザ素子並びに電子機器

Country Status (4)

Country Link
US (1) US20250112439A1 (https=)
EP (1) EP4471999A4 (https=)
JP (1) JP7745011B2 (https=)
WO (1) WO2023145763A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2023153358A1 (https=) * 2022-02-10 2023-08-17

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7831140B2 (ja) * 2022-05-31 2026-03-17 ウシオ電機株式会社 半導体レーザ装置

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JP2000021789A (ja) 1997-08-29 2000-01-21 Toshiba Corp 窒化物系半導体素子、発光素子及びその製造方法
WO2000004615A1 (fr) 1998-07-14 2000-01-27 Fujitsu Limited Laser a semiconducteurs, dispositif a semiconducteurs, et procede de fabrication correspondant
JP2000068609A (ja) 1998-08-24 2000-03-03 Ricoh Co Ltd 半導体基板および半導体レーザ
JP2002261032A (ja) 2000-06-19 2002-09-13 Nichia Chem Ind Ltd 窒化物半導体基板及びその製造方法、並びにその窒化物半導体基板を用いた窒化物半導体素子
JP2002270528A (ja) 2000-12-21 2002-09-20 Nichia Chem Ind Ltd 低欠陥窒化物半導体の成長方法及び窒化物半導体基板
DE10252060A1 (de) 2002-11-08 2004-05-27 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung einer Vielzahl von Halbleiterschichten
JP2006352159A (ja) 2006-08-28 2006-12-28 Sharp Corp ＧａＮ系レーザ素子
JP2007251220A (ja) 2003-02-07 2007-09-27 Sanyo Electric Co Ltd 半導体素子およびその製造方法
JP2008078684A (ja) 2007-12-10 2008-04-03 Matsushita Electric Ind Co Ltd 半導体素子の製造方法
JP2009164512A (ja) 2008-01-10 2009-07-23 Panasonic Corp 半導体レーザ装置
JP2009170519A (ja) 2008-01-11 2009-07-30 Sharp Corp 加工基板ならびに窒化物半導体レーザ装置およびその製造方法
JP2009295693A (ja) 2008-06-03 2009-12-17 Sanyo Electric Co Ltd 窒化物半導体発光素子の作製方法
JP2010141116A (ja) 2008-12-11 2010-06-24 Sanyo Electric Co Ltd 窒化物半導体発光素子の製造方法および窒化物半導体発光素子
US20100265981A1 (en) 2007-12-21 2010-10-21 Sanyo Electric Co., Ltd. Nitride-based semiconductor light-emitting diode, nitride-based semiconductor laser device, method of manufacturing the same, and method of forming nitride-based semiconductor layer
JP2014090090A (ja) 2012-10-30 2014-05-15 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体レーザ素子、ｉｉｉ族窒化物半導体レーザ素子を作製する方法
JP2018037426A (ja) 2015-01-20 2018-03-08 三菱電機株式会社 レーザ光源装置およびその製造方法
WO2020121767A1 (ja) 2018-12-13 2020-06-18 ソニーセミコンダクタソリューションズ株式会社 半導体装置及び半導体装置の製造方法
WO2020262560A1 (ja) 2019-06-26 2020-12-30 京セラ株式会社 積層体および積層体の製造方法
JP2022518431A (ja) 2019-01-16 2022-03-15 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 溝を使用した素子の除去のための方法
JP2022524159A (ja) 2019-03-13 2022-04-27 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 隙間部分を使用した素子の除去のための基板

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JP5151400B2 (ja) * 2007-11-04 2013-02-27 日亜化学工業株式会社 半導体素子の製造方法
JP2009164233A (ja) * 2007-12-28 2009-07-23 Rohm Co Ltd 窒化物半導体レーザ素子およびその製造方法
CN102473799A (zh) * 2009-07-09 2012-05-23 加利福尼亚大学董事会 用于改良在非极性或半极性(Ga，Al，In，B)N衬底上生长的(Ga，Al，In，B)N激光二极管的镜面刻面劈裂产率的结构
JP5411834B2 (ja) * 2010-11-16 2014-02-12 シャープ株式会社 半導体素子、半導体装置及びその製造方法
JP2013251304A (ja) 2012-05-30 2013-12-12 Furukawa Co Ltd 積層体および積層体の製造方法
JP5620547B2 (ja) * 2013-07-05 2014-11-05 シャープ株式会社 窒化物半導体発光素子
JP2018117015A (ja) * 2017-01-17 2018-07-26 ウシオオプトセミコンダクター株式会社 窒化物半導体レーザ素子およびその製造方法
EP3794632A4 (en) * 2018-05-17 2022-06-01 The Regents of the University of California PROCEDURE FOR SHARING A BAR FROM ONE OR MORE DEVICES

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000021789A (ja) 1997-08-29 2000-01-21 Toshiba Corp 窒化物系半導体素子、発光素子及びその製造方法
WO2000004615A1 (fr) 1998-07-14 2000-01-27 Fujitsu Limited Laser a semiconducteurs, dispositif a semiconducteurs, et procede de fabrication correspondant
JP2000068609A (ja) 1998-08-24 2000-03-03 Ricoh Co Ltd 半導体基板および半導体レーザ
JP2002261032A (ja) 2000-06-19 2002-09-13 Nichia Chem Ind Ltd 窒化物半導体基板及びその製造方法、並びにその窒化物半導体基板を用いた窒化物半導体素子
JP2002270528A (ja) 2000-12-21 2002-09-20 Nichia Chem Ind Ltd 低欠陥窒化物半導体の成長方法及び窒化物半導体基板
DE10252060A1 (de) 2002-11-08 2004-05-27 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung einer Vielzahl von Halbleiterschichten
JP2007251220A (ja) 2003-02-07 2007-09-27 Sanyo Electric Co Ltd 半導体素子およびその製造方法
JP2006352159A (ja) 2006-08-28 2006-12-28 Sharp Corp ＧａＮ系レーザ素子
JP2008078684A (ja) 2007-12-10 2008-04-03 Matsushita Electric Ind Co Ltd 半導体素子の製造方法
US20100265981A1 (en) 2007-12-21 2010-10-21 Sanyo Electric Co., Ltd. Nitride-based semiconductor light-emitting diode, nitride-based semiconductor laser device, method of manufacturing the same, and method of forming nitride-based semiconductor layer
JP2009164512A (ja) 2008-01-10 2009-07-23 Panasonic Corp 半導体レーザ装置
JP2009170519A (ja) 2008-01-11 2009-07-30 Sharp Corp 加工基板ならびに窒化物半導体レーザ装置およびその製造方法
JP2009295693A (ja) 2008-06-03 2009-12-17 Sanyo Electric Co Ltd 窒化物半導体発光素子の作製方法
JP2010141116A (ja) 2008-12-11 2010-06-24 Sanyo Electric Co Ltd 窒化物半導体発光素子の製造方法および窒化物半導体発光素子
JP2014090090A (ja) 2012-10-30 2014-05-15 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体レーザ素子、ｉｉｉ族窒化物半導体レーザ素子を作製する方法
JP2018037426A (ja) 2015-01-20 2018-03-08 三菱電機株式会社 レーザ光源装置およびその製造方法
WO2020121767A1 (ja) 2018-12-13 2020-06-18 ソニーセミコンダクタソリューションズ株式会社 半導体装置及び半導体装置の製造方法
JP2022518431A (ja) 2019-01-16 2022-03-15 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 溝を使用した素子の除去のための方法
JP2022524159A (ja) 2019-03-13 2022-04-27 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 隙間部分を使用した素子の除去のための基板
WO2020262560A1 (ja) 2019-06-26 2020-12-30 京セラ株式会社 積層体および積層体の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2023153358A1 (https=) * 2022-02-10 2023-08-17
JP7813820B2 (ja) 2022-02-10 2026-02-13 京セラ株式会社 レーザ素子の製造方法および製造装置

Also Published As

Publication number Publication date
EP4471999A4 (en) 2025-07-09
US20250112439A1 (en) 2025-04-03
JPWO2023145763A1 (https=) 2023-08-03
EP4471999A1 (en) 2024-12-04
WO2023145763A1 (ja) 2023-08-03

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