JP7743434B2 - 撮像素子、撮像装置及び撮像素子の製造方法 - Google Patents

撮像素子、撮像装置及び撮像素子の製造方法

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Publication number
JP7743434B2
JP7743434B2 JP2022561860A JP2022561860A JP7743434B2 JP 7743434 B2 JP7743434 B2 JP 7743434B2 JP 2022561860 A JP2022561860 A JP 2022561860A JP 2022561860 A JP2022561860 A JP 2022561860A JP 7743434 B2 JP7743434 B2 JP 7743434B2
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JPWO2022102509A1 (https=
Inventor
軼倫 何
貴志 町田
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H10F39/1515—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2022561860A 2020-11-11 2021-11-04 撮像素子、撮像装置及び撮像素子の製造方法 Active JP7743434B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020188206 2020-11-11
JP2020188206 2020-11-11
PCT/JP2021/040587 WO2022102509A1 (ja) 2020-11-11 2021-11-04 撮像素子、撮像装置及び撮像素子の製造方法

Publications (2)

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JPWO2022102509A1 JPWO2022102509A1 (https=) 2022-05-19
JP7743434B2 true JP7743434B2 (ja) 2025-09-24

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JP2022561860A Active JP7743434B2 (ja) 2020-11-11 2021-11-04 撮像素子、撮像装置及び撮像素子の製造方法

Country Status (4)

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US (1) US20240297202A1 (https=)
JP (1) JP7743434B2 (https=)
CN (1) CN116491125A (https=)
WO (1) WO2022102509A1 (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150256769A1 (en) 2014-03-10 2015-09-10 Samsung Electronics Co., Ltd. Image sensor and method of manufacturing the same
JP2018148039A (ja) 2017-03-06 2018-09-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および固体撮像装置の製造方法
WO2019240207A1 (ja) 2018-06-15 2019-12-19 ソニーセミコンダクタソリューションズ株式会社 撮像装置およびその製造方法、電子機器
JP2020047616A (ja) 2018-09-14 2020-03-26 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器
WO2020195825A1 (ja) 2019-03-25 2020-10-01 ソニーセミコンダクタソリューションズ株式会社 撮像装置および電子機器

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106653589A (zh) * 2016-12-16 2017-05-10 上海华力微电子有限公司 高压低热预算高k后退火工艺

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150256769A1 (en) 2014-03-10 2015-09-10 Samsung Electronics Co., Ltd. Image sensor and method of manufacturing the same
JP2018148039A (ja) 2017-03-06 2018-09-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および固体撮像装置の製造方法
WO2019240207A1 (ja) 2018-06-15 2019-12-19 ソニーセミコンダクタソリューションズ株式会社 撮像装置およびその製造方法、電子機器
JP2020047616A (ja) 2018-09-14 2020-03-26 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器
WO2020195825A1 (ja) 2019-03-25 2020-10-01 ソニーセミコンダクタソリューションズ株式会社 撮像装置および電子機器

Also Published As

Publication number Publication date
US20240297202A1 (en) 2024-09-05
WO2022102509A1 (ja) 2022-05-19
JPWO2022102509A1 (https=) 2022-05-19
CN116491125A (zh) 2023-07-25

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