JPWO2022102509A1 - - Google Patents
Info
- Publication number
- JPWO2022102509A1 JPWO2022102509A1 JP2022561860A JP2022561860A JPWO2022102509A1 JP WO2022102509 A1 JPWO2022102509 A1 JP WO2022102509A1 JP 2022561860 A JP2022561860 A JP 2022561860A JP 2022561860 A JP2022561860 A JP 2022561860A JP WO2022102509 A1 JPWO2022102509 A1 JP WO2022102509A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
- H10F39/1515—Optical shielding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
- H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020188206 | 2020-11-11 | ||
| JP2020188206 | 2020-11-11 | ||
| PCT/JP2021/040587 WO2022102509A1 (ja) | 2020-11-11 | 2021-11-04 | 撮像素子、撮像装置及び撮像素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022102509A1 true JPWO2022102509A1 (https=) | 2022-05-19 |
| JP7743434B2 JP7743434B2 (ja) | 2025-09-24 |
Family
ID=81601205
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022561860A Active JP7743434B2 (ja) | 2020-11-11 | 2021-11-04 | 撮像素子、撮像装置及び撮像素子の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20240297202A1 (https=) |
| JP (1) | JP7743434B2 (https=) |
| CN (1) | CN116491125A (https=) |
| WO (1) | WO2022102509A1 (https=) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150256769A1 (en) * | 2014-03-10 | 2015-09-10 | Samsung Electronics Co., Ltd. | Image sensor and method of manufacturing the same |
| JP2018148039A (ja) * | 2017-03-06 | 2018-09-20 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置および固体撮像装置の製造方法 |
| WO2019240207A1 (ja) * | 2018-06-15 | 2019-12-19 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置およびその製造方法、電子機器 |
| JP2020047616A (ja) * | 2018-09-14 | 2020-03-26 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置および電子機器 |
| WO2020195825A1 (ja) * | 2019-03-25 | 2020-10-01 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置および電子機器 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106653589A (zh) * | 2016-12-16 | 2017-05-10 | 上海华力微电子有限公司 | 高压低热预算高k后退火工艺 |
-
2021
- 2021-11-04 WO PCT/JP2021/040587 patent/WO2022102509A1/ja not_active Ceased
- 2021-11-04 JP JP2022561860A patent/JP7743434B2/ja active Active
- 2021-11-04 US US18/251,630 patent/US20240297202A1/en active Pending
- 2021-11-04 CN CN202180074465.XA patent/CN116491125A/zh active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150256769A1 (en) * | 2014-03-10 | 2015-09-10 | Samsung Electronics Co., Ltd. | Image sensor and method of manufacturing the same |
| JP2018148039A (ja) * | 2017-03-06 | 2018-09-20 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置および固体撮像装置の製造方法 |
| WO2019240207A1 (ja) * | 2018-06-15 | 2019-12-19 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置およびその製造方法、電子機器 |
| JP2020047616A (ja) * | 2018-09-14 | 2020-03-26 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置および電子機器 |
| WO2020195825A1 (ja) * | 2019-03-25 | 2020-10-01 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置および電子機器 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20240297202A1 (en) | 2024-09-05 |
| WO2022102509A1 (ja) | 2022-05-19 |
| JP7743434B2 (ja) | 2025-09-24 |
| CN116491125A (zh) | 2023-07-25 |
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