JP7727860B2 - プラズマ処理装置、電源システム、及び周波数制御方法 - Google Patents

プラズマ処理装置、電源システム、及び周波数制御方法

Info

Publication number
JP7727860B2
JP7727860B2 JP2024561394A JP2024561394A JP7727860B2 JP 7727860 B2 JP7727860 B2 JP 7727860B2 JP 2024561394 A JP2024561394 A JP 2024561394A JP 2024561394 A JP2024561394 A JP 2024561394A JP 7727860 B2 JP7727860 B2 JP 7727860B2
Authority
JP
Japan
Prior art keywords
source
time
frequency power
waveform period
frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2024561394A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024116938A1 (https=
Inventor
地塩 輿水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JPWO2024116938A1 publication Critical patent/JPWO2024116938A1/ja
Priority to JP2025133229A priority Critical patent/JP2025159091A/ja
Application granted granted Critical
Publication of JP7727860B2 publication Critical patent/JP7727860B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/466—Radiofrequency discharges using capacitive coupling means, e.g. electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32128—Radio frequency generated discharge using particular waveforms, e.g. polarised waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2242/00—Auxiliary systems
    • H05H2242/20—Power circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2245/00—Applications of plasma devices
    • H05H2245/40—Surface treatments

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2024561394A 2022-11-30 2023-11-20 プラズマ処理装置、電源システム、及び周波数制御方法 Active JP7727860B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025133229A JP2025159091A (ja) 2022-11-30 2025-08-08 プラズマ処理装置、電源システム、及び周波数制御方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022191299 2022-11-30
JP2022191299 2022-11-30
PCT/JP2023/041648 WO2024116938A1 (ja) 2022-11-30 2023-11-20 プラズマ処理装置、電源システム、及び周波数制御方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025133229A Division JP2025159091A (ja) 2022-11-30 2025-08-08 プラズマ処理装置、電源システム、及び周波数制御方法

Publications (2)

Publication Number Publication Date
JPWO2024116938A1 JPWO2024116938A1 (https=) 2024-06-06
JP7727860B2 true JP7727860B2 (ja) 2025-08-21

Family

ID=91323724

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2024561394A Active JP7727860B2 (ja) 2022-11-30 2023-11-20 プラズマ処理装置、電源システム、及び周波数制御方法
JP2025133229A Pending JP2025159091A (ja) 2022-11-30 2025-08-08 プラズマ処理装置、電源システム、及び周波数制御方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025133229A Pending JP2025159091A (ja) 2022-11-30 2025-08-08 プラズマ処理装置、電源システム、及び周波数制御方法

Country Status (6)

Country Link
US (1) US20250285837A1 (https=)
EP (1) EP4622397A1 (https=)
JP (2) JP7727860B2 (https=)
CN (2) CN121547930A (https=)
TW (1) TW202442033A (https=)
WO (1) WO2024116938A1 (https=)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018536295A (ja) 2015-09-01 2018-12-06 エムケーエス インストゥルメンツ，インコーポレイテッド プラズマｒｆバイアス消去システム
WO2019244734A1 (ja) 2018-06-22 2019-12-26 東京エレクトロン株式会社 制御方法及びプラズマ処理装置
JP2020515001A (ja) 2017-03-13 2020-05-21 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 可変周波数発生器を用いるスマート高周波パルス調整
JP2021086659A (ja) 2019-11-25 2021-06-03 株式会社ダイヘン 高周波電源システム
JP2021106354A (ja) 2019-12-27 2021-07-26 株式会社ダイヘン 高周波電源システム
JP2021535574A (ja) 2018-09-28 2021-12-16 ラム リサーチ コーポレーションLam Research Corporation プラズマチャンバの電極への電力送出を最適化するシステムおよび方法
WO2021262827A1 (en) 2020-06-26 2021-12-30 Lam Research Corporation Systems and methods for use of low frequency harmonics in bias radiofrequency supply to control uniformity of plasma process results across substrate
WO2022010686A1 (en) 2020-07-08 2022-01-13 Lam Research Corporation Systems and methods for extracting process control information from radiofrequency supply system of plasma processing system
WO2022163530A1 (ja) 2021-01-29 2022-08-04 東京エレクトロン株式会社 プラズマ処理装置及びソース高周波電力のソース周波数を制御する方法
WO2023127655A1 (ja) 2021-12-27 2023-07-06 東京エレクトロン株式会社 プラズマ処理装置、電源システム、制御方法、プログラム、及び記憶媒体

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5319150B2 (ja) 2008-03-31 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法及びコンピュータ読み取り可能な記憶媒体
JP6643212B2 (ja) * 2016-09-16 2020-02-12 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
CN109994360B (zh) * 2017-12-29 2021-06-01 中微半导体设备(上海)股份有限公司 一种等离子体射频调节方法及等离子处理装置
CN110299279B (zh) * 2019-08-22 2019-11-12 中微半导体设备(上海)股份有限公司 一种射频电源系统、等离子体处理器及其调频匹配方法
CN110310878B (zh) * 2019-08-28 2019-11-12 中微半导体设备(上海)股份有限公司 一种等离子体处理器及其处理方法
JP7511423B2 (ja) * 2019-12-17 2024-07-05 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法、及び電源システム
JP7493428B2 (ja) * 2020-10-21 2024-05-31 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP7544594B2 (ja) * 2020-12-25 2024-09-03 株式会社ダイヘン 高周波電源システム
JP7692783B2 (ja) * 2021-05-06 2025-06-16 東京エレクトロン株式会社 プラズマ処理装置及び終点検出方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018536295A (ja) 2015-09-01 2018-12-06 エムケーエス インストゥルメンツ，インコーポレイテッド プラズマｒｆバイアス消去システム
JP2020515001A (ja) 2017-03-13 2020-05-21 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 可変周波数発生器を用いるスマート高周波パルス調整
WO2019244734A1 (ja) 2018-06-22 2019-12-26 東京エレクトロン株式会社 制御方法及びプラズマ処理装置
JP2021535574A (ja) 2018-09-28 2021-12-16 ラム リサーチ コーポレーションLam Research Corporation プラズマチャンバの電極への電力送出を最適化するシステムおよび方法
JP2021086659A (ja) 2019-11-25 2021-06-03 株式会社ダイヘン 高周波電源システム
JP2021106354A (ja) 2019-12-27 2021-07-26 株式会社ダイヘン 高周波電源システム
WO2021262827A1 (en) 2020-06-26 2021-12-30 Lam Research Corporation Systems and methods for use of low frequency harmonics in bias radiofrequency supply to control uniformity of plasma process results across substrate
WO2022010686A1 (en) 2020-07-08 2022-01-13 Lam Research Corporation Systems and methods for extracting process control information from radiofrequency supply system of plasma processing system
WO2022163530A1 (ja) 2021-01-29 2022-08-04 東京エレクトロン株式会社 プラズマ処理装置及びソース高周波電力のソース周波数を制御する方法
WO2023127655A1 (ja) 2021-12-27 2023-07-06 東京エレクトロン株式会社 プラズマ処理装置、電源システム、制御方法、プログラム、及び記憶媒体

Also Published As

Publication number Publication date
JPWO2024116938A1 (https=) 2024-06-06
WO2024116938A1 (ja) 2024-06-06
US20250285837A1 (en) 2025-09-11
JP2025159091A (ja) 2025-10-17
CN120345350B (zh) 2025-11-28
CN121547930A (zh) 2026-02-17
KR20250099261A (ko) 2025-07-01
CN120345350A (zh) 2025-07-18
TW202442033A (zh) 2024-10-16
EP4622397A1 (en) 2025-09-24

Similar Documents

Publication Publication Date Title
JP7713035B2 (ja) プラズマ処理装置、電源システム、制御方法、プログラム、及び記憶媒体
JP7753427B2 (ja) プラズマ処理装置
JP7474913B2 (ja) 電源システム
JP7577093B2 (ja) プラズマ処理システムおよびプラズマ処理方法
US20250149296A1 (en) Plasma processing apparatus and plasma processing method
WO2023127655A1 (ja) プラズマ処理装置、電源システム、制御方法、プログラム、及び記憶媒体
JP7622252B2 (ja) プラズマ処理装置、電源システム、制御方法、プログラム、及び記憶媒体
WO2024014398A1 (ja) プラズマ処理装置及びプラズマ処理方法
JP7727860B2 (ja) プラズマ処理装置、電源システム、及び周波数制御方法
JP7678233B2 (ja) プラズマ処理装置、ソース高周波電力のソース周波数を制御する方法、及び記憶媒体
JP2023129234A (ja) プラズマ処理装置
KR102960037B1 (ko) 플라즈마 처리 장치, 전원 시스템, 및 주파수 제어 방법
JP7721820B2 (ja) プラズマ処理装置、電源システム、及びソース周波数を制御する方法
US20250266248A1 (en) Electric bias control in plasma processing
WO2024106257A1 (ja) プラズマ処理装置及びプラズマ処理方法
WO2025105243A1 (ja) 電源システム、プラズマ処理装置、及び制御方法
JP2024119243A (ja) プラズマ処理装置、電源システム、及びプラズマ処理方法
CN120584550A (zh) 等离子体处理装置、电源系统以及控制方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20250519

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20250519

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250610

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20250626

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20250808

R150 Certificate of patent or registration of utility model

Ref document number: 7727860

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150