CN121547930A - 等离子体处理装置、电源系统和频率控制方法 - Google Patents

等离子体处理装置、电源系统和频率控制方法

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Publication number
CN121547930A
CN121547930A CN202511624044.6A CN202511624044A CN121547930A CN 121547930 A CN121547930 A CN 121547930A CN 202511624044 A CN202511624044 A CN 202511624044A CN 121547930 A CN121547930 A CN 121547930A
Authority
CN
China
Prior art keywords
frequency
time
source
waveform period
time points
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202511624044.6A
Other languages
English (en)
Chinese (zh)
Inventor
舆水地盐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN121547930A publication Critical patent/CN121547930A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/466—Radiofrequency discharges using capacitive coupling means, e.g. electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32128—Radio frequency generated discharge using particular waveforms, e.g. polarised waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2242/00—Auxiliary systems
    • H05H2242/20—Power circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2245/00—Applications of plasma devices
    • H05H2245/40—Surface treatments

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
CN202511624044.6A 2022-11-30 2023-11-20 等离子体处理装置、电源系统和频率控制方法 Pending CN121547930A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2022191299 2022-11-30
JP2022-191299 2022-11-30
PCT/JP2023/041648 WO2024116938A1 (ja) 2022-11-30 2023-11-20 プラズマ処理装置、電源システム、及び周波数制御方法
CN202380080885.8A CN120345350B (zh) 2022-11-30 2023-11-20 等离子体处理装置、电源系统和频率控制方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN202380080885.8A Division CN120345350B (zh) 2022-11-30 2023-11-20 等离子体处理装置、电源系统和频率控制方法

Publications (1)

Publication Number Publication Date
CN121547930A true CN121547930A (zh) 2026-02-17

Family

ID=91323724

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202511624044.6A Pending CN121547930A (zh) 2022-11-30 2023-11-20 等离子体处理装置、电源系统和频率控制方法
CN202380080885.8A Active CN120345350B (zh) 2022-11-30 2023-11-20 等离子体处理装置、电源系统和频率控制方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202380080885.8A Active CN120345350B (zh) 2022-11-30 2023-11-20 等离子体处理装置、电源系统和频率控制方法

Country Status (6)

Country Link
US (1) US20250285837A1 (https=)
EP (1) EP4622397A1 (https=)
JP (2) JP7727860B2 (https=)
CN (2) CN121547930A (https=)
TW (1) TW202442033A (https=)
WO (1) WO2024116938A1 (https=)

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5319150B2 (ja) 2008-03-31 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法及びコンピュータ読み取り可能な記憶媒体
US9947514B2 (en) * 2015-09-01 2018-04-17 Mks Instruments, Inc. Plasma RF bias cancellation system
JP6643212B2 (ja) * 2016-09-16 2020-02-12 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
US10424467B2 (en) * 2017-03-13 2019-09-24 Applied Materials, Inc. Smart RF pulsing tuning using variable frequency generators
CN109994360B (zh) * 2017-12-29 2021-06-01 中微半导体设备(上海)股份有限公司 一种等离子体射频调节方法及等离子处理装置
JP7175239B2 (ja) * 2018-06-22 2022-11-18 東京エレクトロン株式会社 制御方法、プラズマ処理装置、プログラム及び記憶媒体
WO2020068107A1 (en) * 2018-09-28 2020-04-02 Lam Research Corporation Systems and methods for optimizing power delivery to an electrode of a plasma chamber
CN110299279B (zh) * 2019-08-22 2019-11-12 中微半导体设备(上海)股份有限公司 一种射频电源系统、等离子体处理器及其调频匹配方法
CN110310878B (zh) * 2019-08-28 2019-11-12 中微半导体设备(上海)股份有限公司 一种等离子体处理器及其处理方法
JP7437142B2 (ja) * 2019-11-25 2024-02-22 株式会社ダイヘン 高周波電源システム
JP7511423B2 (ja) * 2019-12-17 2024-07-05 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法、及び電源システム
JP7474591B2 (ja) * 2019-12-27 2024-04-25 株式会社ダイヘン 高周波電源システム
KR102903079B1 (ko) * 2020-06-26 2025-12-19 램 리써치 코포레이션 기판에 걸친 플라즈마 프로세스 결과들의 균일도를 제어하기 위해 바이어스 무선 주파수 공급부에서 저 주파수 고조파의 사용을 위한 시스템들 및 방법들
KR20230034970A (ko) * 2020-07-08 2023-03-10 램 리써치 코포레이션 플라즈마 프로세싱 시스템의 무선 주파수 (radiofrequency) 공급 시스템으로부터 프로세스 제어 정보를 추출하기 위한 시스템들 및 방법들
JP7493428B2 (ja) * 2020-10-21 2024-05-31 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP7544594B2 (ja) * 2020-12-25 2024-09-03 株式会社ダイヘン 高周波電源システム
KR102786710B1 (ko) * 2021-01-29 2025-03-25 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 소스 고주파 전력의 소스 주파수를 제어하는 방법
JP7692783B2 (ja) * 2021-05-06 2025-06-16 東京エレクトロン株式会社 プラズマ処理装置及び終点検出方法
TW202341227A (zh) * 2021-12-27 2023-10-16 日商東京威力科創股份有限公司 電漿處理裝置、電源系統、控制方法、程式及記憶媒體

Also Published As

Publication number Publication date
JPWO2024116938A1 (https=) 2024-06-06
WO2024116938A1 (ja) 2024-06-06
US20250285837A1 (en) 2025-09-11
JP2025159091A (ja) 2025-10-17
CN120345350B (zh) 2025-11-28
JP7727860B2 (ja) 2025-08-21
KR20250099261A (ko) 2025-07-01
CN120345350A (zh) 2025-07-18
TW202442033A (zh) 2024-10-16
EP4622397A1 (en) 2025-09-24

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