JP7717696B2 - マルチチャネルマルチプレクサ - Google Patents

マルチチャネルマルチプレクサ

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Publication number
JP7717696B2
JP7717696B2 JP2022533153A JP2022533153A JP7717696B2 JP 7717696 B2 JP7717696 B2 JP 7717696B2 JP 2022533153 A JP2022533153 A JP 2022533153A JP 2022533153 A JP2022533153 A JP 2022533153A JP 7717696 B2 JP7717696 B2 JP 7717696B2
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JP
Japan
Prior art keywords
switch
coupled
circuit
node
buffer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022533153A
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English (en)
Japanese (ja)
Other versions
JP2023505464A (ja
JP2023505464A5 (enExample
Inventor
アガワル ナイティン
ラマナン アール ヴェンカタ
スレシュ カランジカール クナル
Original Assignee
テキサス インスツルメンツ インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by テキサス インスツルメンツ インコーポレイテッド filed Critical テキサス インスツルメンツ インコーポレイテッド
Publication of JP2023505464A publication Critical patent/JP2023505464A/ja
Publication of JP2023505464A5 publication Critical patent/JP2023505464A5/ja
Application granted granted Critical
Publication of JP7717696B2 publication Critical patent/JP7717696B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/002—Switching arrangements with several input- or output terminals
    • H03K17/005—Switching arrangements with several input- or output terminals with several inputs only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45341—Indexing scheme relating to differential amplifiers the AAC comprising controlled floating gates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45342—Indexing scheme relating to differential amplifiers the AAC comprising control means on a back gate of the AAC
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0018—Special modifications or use of the back gate voltage of a FET
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0054—Gating switches, e.g. pass gates

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
JP2022533153A 2019-12-02 2020-12-02 マルチチャネルマルチプレクサ Active JP7717696B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/700,444 2019-12-02
US16/700,444 US10917090B1 (en) 2019-12-02 2019-12-02 Multi-channel multiplexer
PCT/US2020/062768 WO2021113276A1 (en) 2019-12-02 2020-12-02 Multi-channel multiplexer

Publications (3)

Publication Number Publication Date
JP2023505464A JP2023505464A (ja) 2023-02-09
JP2023505464A5 JP2023505464A5 (enExample) 2023-12-06
JP7717696B2 true JP7717696B2 (ja) 2025-08-04

Family

ID=74537355

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022533153A Active JP7717696B2 (ja) 2019-12-02 2020-12-02 マルチチャネルマルチプレクサ

Country Status (5)

Country Link
US (3) US10917090B1 (enExample)
EP (2) EP4070457B1 (enExample)
JP (1) JP7717696B2 (enExample)
CN (1) CN114747141B (enExample)
WO (1) WO2021113276A1 (enExample)

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US20250202477A1 (en) * 2022-08-30 2025-06-19 Analog Devices International Unlimited Company A solid state switch
US12122251B2 (en) 2022-09-28 2024-10-22 BorgWarner US Technologies LLC Systems and methods for bidirectional message architecture for inverter for electric vehicle
US12483265B2 (en) 2022-11-29 2025-11-25 Nxp Usa, Inc. RDAC ladder with adaptive biasing to reduce the reference variation across temperature

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JP2005303347A (ja) 2004-04-06 2005-10-27 Denso Corp アナログスイッチ及びマルチプレクサ

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Also Published As

Publication number Publication date
US20210167775A1 (en) 2021-06-03
EP4070457A4 (en) 2022-12-28
EP4583405A2 (en) 2025-07-09
CN114747141B (zh) 2026-03-24
EP4070457B1 (en) 2025-05-07
EP4583405A3 (en) 2025-10-01
US20240213981A1 (en) 2024-06-27
US10917090B1 (en) 2021-02-09
EP4070457A1 (en) 2022-10-12
US11955964B2 (en) 2024-04-09
JP2023505464A (ja) 2023-02-09
CN114747141A (zh) 2022-07-12
WO2021113276A1 (en) 2021-06-10

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