CN114747141B - 多沟道多路复用器 - Google Patents
多沟道多路复用器Info
- Publication number
- CN114747141B CN114747141B CN202080084061.4A CN202080084061A CN114747141B CN 114747141 B CN114747141 B CN 114747141B CN 202080084061 A CN202080084061 A CN 202080084061A CN 114747141 B CN114747141 B CN 114747141B
- Authority
- CN
- China
- Prior art keywords
- node
- coupled
- buffer
- transistor
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45183—Long tailed pairs
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/002—Switching arrangements with several input- or output terminals
- H03K17/005—Switching arrangements with several input- or output terminals with several inputs only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/10—Modifications for increasing the maximum permissible switched voltage
- H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45341—Indexing scheme relating to differential amplifiers the AAC comprising controlled floating gates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45342—Indexing scheme relating to differential amplifiers the AAC comprising control means on a back gate of the AAC
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0018—Special modifications or use of the back gate voltage of a FET
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0054—Gating switches, e.g. pass gates
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/700,444 | 2019-12-02 | ||
| US16/700,444 US10917090B1 (en) | 2019-12-02 | 2019-12-02 | Multi-channel multiplexer |
| PCT/US2020/062768 WO2021113276A1 (en) | 2019-12-02 | 2020-12-02 | Multi-channel multiplexer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114747141A CN114747141A (zh) | 2022-07-12 |
| CN114747141B true CN114747141B (zh) | 2026-03-24 |
Family
ID=74537355
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080084061.4A Active CN114747141B (zh) | 2019-12-02 | 2020-12-02 | 多沟道多路复用器 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US10917090B1 (enExample) |
| EP (2) | EP4070457B1 (enExample) |
| JP (1) | JP7717696B2 (enExample) |
| CN (1) | CN114747141B (enExample) |
| WO (1) | WO2021113276A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20250202477A1 (en) * | 2022-08-30 | 2025-06-19 | Analog Devices International Unlimited Company | A solid state switch |
| US12122251B2 (en) | 2022-09-28 | 2024-10-22 | BorgWarner US Technologies LLC | Systems and methods for bidirectional message architecture for inverter for electric vehicle |
| US12483265B2 (en) | 2022-11-29 | 2025-11-25 | Nxp Usa, Inc. | RDAC ladder with adaptive biasing to reduce the reference variation across temperature |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2336488A (en) * | 1998-04-17 | 1999-10-20 | Federal Ind Ind Group Inc | Low leakage ultrasonic transducer selector using solid-state relays |
Family Cites Families (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5593140U (enExample) * | 1978-12-21 | 1980-06-27 | ||
| JPS6125322A (ja) * | 1984-07-16 | 1986-02-04 | Yokogawa Hokushin Electric Corp | マルチプレクサ回路 |
| FR2667187A1 (fr) * | 1990-09-21 | 1992-03-27 | Senn Patrice | Circuit de commande, notamment pour ecran d'affichage a cristal liquide, a sortie protegee. |
| US5075566A (en) * | 1990-12-14 | 1991-12-24 | International Business Machines Corporation | Bipolar emitter-coupled logic multiplexer |
| EP0863498B1 (en) * | 1993-08-30 | 2002-10-23 | Sharp Kabushiki Kaisha | Data signal line structure in an active matrix liquid crystal display |
| US5910780A (en) * | 1996-11-13 | 1999-06-08 | Analog Devices, Inc. | Switched-transconductance multiplexer circuit with integrated T-switches |
| KR100209224B1 (ko) * | 1996-12-27 | 1999-07-15 | 김영환 | 고속 다중화기 |
| US6040732A (en) * | 1997-04-09 | 2000-03-21 | Analog Devices, Inc. | Switched-transconductance circuit within integrated T-switches |
| US5880620A (en) * | 1997-04-22 | 1999-03-09 | Xilinx, Inc. | Pass gate circuit with body bias control |
| JP3258930B2 (ja) * | 1997-04-24 | 2002-02-18 | 東芝マイクロエレクトロニクス株式会社 | トランスミッション・ゲート |
| US6417717B1 (en) * | 1998-12-31 | 2002-07-09 | Agere Systems Guardian Corp. | Hierarchical multiplexer for analog array readout |
| KR100416625B1 (ko) * | 2002-05-09 | 2004-01-31 | 삼성전자주식회사 | 기준전압 변동을 감소시키는 차동 타입의 입출력 버퍼 |
| US7046071B1 (en) * | 2003-08-04 | 2006-05-16 | Xilinx, Inc. | Series capacitor coupling multiplexer for programmable logic devices |
| US8111094B2 (en) * | 2003-11-21 | 2012-02-07 | Lsi Corporation | Analog multiplexer circuits and methods |
| US7285990B1 (en) * | 2004-01-14 | 2007-10-23 | Fairchild Semiconductor Corporation | High-precision buffer circuit |
| JP2005303347A (ja) | 2004-04-06 | 2005-10-27 | Denso Corp | アナログスイッチ及びマルチプレクサ |
| US7030679B2 (en) * | 2004-07-29 | 2006-04-18 | Elantec Semiconductor, Inc. | Analog multiplexing circuits |
| US7253663B2 (en) * | 2005-06-15 | 2007-08-07 | Ati Technologies Inc. | Apparatus and methods for self-biasing differential signaling circuitry having multimode output configurations for low voltage applications |
| US7295070B2 (en) * | 2005-06-21 | 2007-11-13 | Analog Devices, Inc. | Flip around switched capacitor amplifier |
| US7394309B1 (en) * | 2006-08-15 | 2008-07-01 | National Semiconductor Corporation | Balanced offset compensation circuit |
| JP5044242B2 (ja) * | 2007-03-08 | 2012-10-10 | オンセミコンダクター・トレーディング・リミテッド | 増幅回路 |
| US8324956B2 (en) * | 2010-12-28 | 2012-12-04 | Motorola Solutions, Inc. | Flexible low noise, high linearity, high frequency, low power, fully differential mixer and class AB post-mixer amplifier system for SDR applications |
| US8350738B2 (en) * | 2011-01-20 | 2013-01-08 | International Business Machines Corporation | Track and hold amplifiers and digital calibration for analog-to-digital converters |
| US8519773B2 (en) * | 2011-06-17 | 2013-08-27 | Texas Instruments Incorporated | Power switch with one-shot discharge and increased switching speed |
| US8729954B2 (en) * | 2011-08-31 | 2014-05-20 | Freescale Semiconductor, Inc. | MOFSET mismatch characterization circuit |
| FR3030155B1 (fr) * | 2014-12-12 | 2017-01-13 | Stmicroelectronics (Grenoble 2) Sas | Multiplexeur analogique |
| CN104660184B (zh) * | 2015-02-12 | 2017-12-15 | 天津大学 | 应用于低功耗lcd的自偏置甲乙类输出缓冲放大器 |
| TWI580185B (zh) * | 2015-03-05 | 2017-04-21 | 瑞昱半導體股份有限公司 | 類比開關電路 |
| CN106712754B (zh) * | 2015-08-04 | 2023-10-20 | 意法半导体研发(深圳)有限公司 | 用于mos的自适应本体偏置的动态阈值发生器 |
| US10177713B1 (en) * | 2016-03-07 | 2019-01-08 | Ali Tasdighi Far | Ultra low power high-performance amplifier |
| US10454493B2 (en) * | 2016-05-10 | 2019-10-22 | Analog Devices Global | Integrated circuit with on chip variation reduction |
| US9979396B1 (en) * | 2017-02-23 | 2018-05-22 | Stmicroelectronics (Grenoble 2) Sas | Bidirectional analog multiplexer |
| US10620299B2 (en) * | 2017-03-21 | 2020-04-14 | Linear Technology Corporation | Unity gain buffer with two states |
| US10243550B2 (en) * | 2017-06-16 | 2019-03-26 | Stmicroelectronics, Inc. | High voltage comparator |
| JP6835005B2 (ja) * | 2018-02-16 | 2021-02-24 | 株式会社村田製作所 | フロントエンド回路 |
| US20190280655A1 (en) * | 2018-03-08 | 2019-09-12 | Raydium Semiconductor Corporation | Amplifier circuit and butter amplifier |
| US10613569B2 (en) * | 2018-04-12 | 2020-04-07 | Analog Devices Global Unlimited Company | Low power half-VDD generation circuit with high driving capability |
| US10411707B1 (en) * | 2018-07-31 | 2019-09-10 | Micron Technology, Inc. | Systems and methods for improving signal margin for input buffer circuits |
| US11108981B2 (en) * | 2018-09-03 | 2021-08-31 | Fermi Research Alliance, Llc | Compact, low power, high resolution ADC per pixel for large area pixel detectors |
| CN109903730B (zh) * | 2019-02-13 | 2021-04-06 | 奕力科技(开曼)股份有限公司 | 缓冲电路 |
| KR102697884B1 (ko) * | 2019-10-04 | 2024-08-22 | 에스케이하이닉스 주식회사 | 전압 생성 회로 및 이를 포함하는 입력 버퍼 |
| KR102855057B1 (ko) * | 2021-01-27 | 2025-09-08 | 주식회사 디비글로벌칩 | 출력 버퍼, 및 이를 포함하는 소스 드라이버 |
-
2019
- 2019-12-02 US US16/700,444 patent/US10917090B1/en active Active
-
2020
- 2020-12-02 EP EP20896793.5A patent/EP4070457B1/en active Active
- 2020-12-02 WO PCT/US2020/062768 patent/WO2021113276A1/en not_active Ceased
- 2020-12-02 CN CN202080084061.4A patent/CN114747141B/zh active Active
- 2020-12-02 JP JP2022533153A patent/JP7717696B2/ja active Active
- 2020-12-02 EP EP25171024.0A patent/EP4583405A3/en active Pending
-
2021
- 2021-02-08 US US17/169,638 patent/US11955964B2/en active Active
-
2024
- 2024-03-08 US US18/599,361 patent/US20240213981A1/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2336488A (en) * | 1998-04-17 | 1999-10-20 | Federal Ind Ind Group Inc | Low leakage ultrasonic transducer selector using solid-state relays |
Also Published As
| Publication number | Publication date |
|---|---|
| US20210167775A1 (en) | 2021-06-03 |
| EP4070457A4 (en) | 2022-12-28 |
| EP4583405A2 (en) | 2025-07-09 |
| EP4070457B1 (en) | 2025-05-07 |
| EP4583405A3 (en) | 2025-10-01 |
| US20240213981A1 (en) | 2024-06-27 |
| US10917090B1 (en) | 2021-02-09 |
| EP4070457A1 (en) | 2022-10-12 |
| US11955964B2 (en) | 2024-04-09 |
| JP7717696B2 (ja) | 2025-08-04 |
| JP2023505464A (ja) | 2023-02-09 |
| CN114747141A (zh) | 2022-07-12 |
| WO2021113276A1 (en) | 2021-06-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |