JP7715190B2 - 半導体装置及びモジュール - Google Patents

半導体装置及びモジュール

Info

Publication number
JP7715190B2
JP7715190B2 JP2023521005A JP2023521005A JP7715190B2 JP 7715190 B2 JP7715190 B2 JP 7715190B2 JP 2023521005 A JP2023521005 A JP 2023521005A JP 2023521005 A JP2023521005 A JP 2023521005A JP 7715190 B2 JP7715190 B2 JP 7715190B2
Authority
JP
Japan
Prior art keywords
substrate
external electrode
layer
resin body
thickness direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023521005A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2022239718A1 (https=
JPWO2022239718A5 (https=
Inventor
勇太 今村
真臣 原田
武史 香川
是清 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Publication of JPWO2022239718A1 publication Critical patent/JPWO2022239718A1/ja
Publication of JPWO2022239718A5 publication Critical patent/JPWO2022239718A5/ja
Application granted granted Critical
Publication of JP7715190B2 publication Critical patent/JP7715190B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
    • H01G2/02—Mountings
    • H01G2/06—Mountings specially adapted for mounting on a printed-circuit support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/601—Capacitive arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
JP2023521005A 2021-05-10 2022-05-09 半導体装置及びモジュール Active JP7715190B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021079847 2021-05-10
JP2021079847 2021-05-10
PCT/JP2022/019620 WO2022239718A1 (ja) 2021-05-10 2022-05-09 半導体装置及びモジュール

Publications (3)

Publication Number Publication Date
JPWO2022239718A1 JPWO2022239718A1 (https=) 2022-11-17
JPWO2022239718A5 JPWO2022239718A5 (https=) 2024-02-13
JP7715190B2 true JP7715190B2 (ja) 2025-07-30

Family

ID=84029610

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023521005A Active JP7715190B2 (ja) 2021-05-10 2022-05-09 半導体装置及びモジュール

Country Status (4)

Country Link
US (1) US20240063252A1 (https=)
JP (1) JP7715190B2 (https=)
CN (1) CN117242539A (https=)
WO (1) WO2022239718A1 (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010157667A (ja) 2009-01-05 2010-07-15 Sumitomo Electric Ind Ltd 検出装置およびその製造方法
JP2012015299A (ja) 2010-06-30 2012-01-19 Tdk Corp 電子部品及び電子デバイス
JP2012015333A (ja) 2010-06-30 2012-01-19 Tdk Corp 電子部品及び電子デバイス
JP2015038927A (ja) 2013-08-19 2015-02-26 富士通株式会社 電子装置及び電子装置の製造方法
WO2016021529A1 (ja) 2014-08-06 2016-02-11 株式会社村田製作所 複合電子部品

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010157667A (ja) 2009-01-05 2010-07-15 Sumitomo Electric Ind Ltd 検出装置およびその製造方法
JP2012015299A (ja) 2010-06-30 2012-01-19 Tdk Corp 電子部品及び電子デバイス
JP2012015333A (ja) 2010-06-30 2012-01-19 Tdk Corp 電子部品及び電子デバイス
JP2015038927A (ja) 2013-08-19 2015-02-26 富士通株式会社 電子装置及び電子装置の製造方法
WO2016021529A1 (ja) 2014-08-06 2016-02-11 株式会社村田製作所 複合電子部品

Also Published As

Publication number Publication date
US20240063252A1 (en) 2024-02-22
WO2022239718A1 (ja) 2022-11-17
CN117242539A (zh) 2023-12-15
JPWO2022239718A1 (https=) 2022-11-17

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