JP7698169B2 - 電圧バッファリングのための方法及び装置 - Google Patents

電圧バッファリングのための方法及び装置 Download PDF

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JP7698169B2
JP7698169B2 JP2021510007A JP2021510007A JP7698169B2 JP 7698169 B2 JP7698169 B2 JP 7698169B2 JP 2021510007 A JP2021510007 A JP 2021510007A JP 2021510007 A JP2021510007 A JP 2021510007A JP 7698169 B2 JP7698169 B2 JP 7698169B2
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voltage
terminal
current
input
transistor
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JP2021534689A (ja
JP2021534689A5 (https=
JPWO2020047425A5 (https=
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アクタール シラージ
サンカラン スワミナサン
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テキサス インスツルメンツ インコーポレイテッド
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/181—Low-frequency amplifiers, e.g. audio preamplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/181—Low-frequency amplifiers, e.g. audio preamplifiers
    • H03F3/183—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/50—Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/28—Impedance matching networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/306—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in junction-FET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/03—Indexing scheme relating to amplifiers the amplifier being designed for audio applications
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/318—A matching circuit being used as coupling element between two amplifying stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/50—Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower
    • H03F3/505—Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower with field-effect devices

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Amplifiers (AREA)
JP2021510007A 2018-08-31 2019-08-30 電圧バッファリングのための方法及び装置 Active JP7698169B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025042546A JP2025090809A (ja) 2018-08-31 2025-03-17 電圧バッファリングのための方法及び装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862725832P 2018-08-31 2018-08-31
US62/725,832 2018-08-31
PCT/US2019/049089 WO2020047425A1 (en) 2018-08-31 2019-08-30 Methods and apparatus for voltage buffering

Related Child Applications (1)

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JP2025042546A Division JP2025090809A (ja) 2018-08-31 2025-03-17 電圧バッファリングのための方法及び装置

Publications (4)

Publication Number Publication Date
JP2021534689A JP2021534689A (ja) 2021-12-09
JP2021534689A5 JP2021534689A5 (https=) 2022-08-30
JPWO2020047425A5 JPWO2020047425A5 (https=) 2022-08-30
JP7698169B2 true JP7698169B2 (ja) 2025-06-25

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JP2021510007A Active JP7698169B2 (ja) 2018-08-31 2019-08-30 電圧バッファリングのための方法及び装置
JP2025042546A Pending JP2025090809A (ja) 2018-08-31 2025-03-17 電圧バッファリングのための方法及び装置

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Country Link
US (1) US12126309B2 (https=)
EP (1) EP3844871A4 (https=)
JP (2) JP7698169B2 (https=)
CN (1) CN112534713A (https=)
WO (1) WO2020047425A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113114253B (zh) * 2021-05-28 2024-07-23 西北核技术研究所 一种应用于超高速数据采集系统的模拟信号调理系统
US12519435B2 (en) 2022-10-20 2026-01-06 Macom Technology Solutions Holdings, Inc. Adaptive temperature peaking control for wideband amplifiers

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030030478A1 (en) 1999-12-28 2003-02-13 Analog Devices, Inc. RMS-DC converter having gain stages with variable weighting coefficients
JP2007520163A (ja) 2004-01-27 2007-07-19 ノースロップ・グラマン・コーポレーション 差動回路用複合負荷
WO2012141008A1 (ja) 2011-04-11 2012-10-18 日本電気株式会社 半導体集積回路

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FR2719425B1 (fr) * 1994-04-29 1996-08-09 Sgs Thomson Microelectronics Amplificateur différentiel à réglage de mode commun.
JP3306252B2 (ja) * 1994-09-19 2002-07-24 アルプス電気株式会社 ベース接地トランジスタ増幅器
US6175279B1 (en) * 1997-12-09 2001-01-16 Qualcomm Incorporated Amplifier with adjustable bias current
US6163216A (en) 1998-12-18 2000-12-19 Texas Instruments Tucson Corporation Wideband operational amplifier
US6396347B1 (en) * 2001-05-03 2002-05-28 International Business Machines Corporation Low-power, low-noise dual gain amplifier topology and method
US6437612B1 (en) * 2001-11-28 2002-08-20 Institute Of Microelectronics Inductor-less RF/IF CMOS buffer for 50Ω off-chip load driving
JP2004253919A (ja) 2003-02-18 2004-09-09 Sony Corp エミッタフォロワ回路及び同回路を有する位相シフト回路
EP1557949A1 (en) * 2004-01-23 2005-07-27 Matsushita Electric Industrial Co., Ltd. Low-noise differential bias circuit and differential signal processing apparatus
US7099646B1 (en) * 2004-01-27 2006-08-29 Marvell International Ltd. Signal mixer having a single-ended input and a differential output
US7145395B2 (en) * 2004-09-16 2006-12-05 Qualcomm Incorporated Linear transconductance cell with wide tuning range
JP4583967B2 (ja) * 2005-02-23 2010-11-17 パナソニック株式会社 高周波電力増幅器及びその出力電力調整方法
US7439805B1 (en) * 2006-06-08 2008-10-21 Rf Micro Devices, Inc. Enhancement-depletion Darlington device
US7746042B2 (en) * 2006-10-05 2010-06-29 Advanced Analogic Technologies, Inc. Low-noise DC/DC converter with controlled diode conduction
KR100955822B1 (ko) * 2008-02-29 2010-05-06 인티그런트 테크놀로지즈(주) 선형성이 향상된 차동 증폭 회로
TWI352500B (en) * 2009-09-16 2011-11-11 Ind Tech Res Inst Balun amplifier
CN201608817U (zh) * 2009-11-30 2010-10-13 康佳集团股份有限公司 一种视频输出电路及视频终端
US9537457B2 (en) * 2015-02-24 2017-01-03 Intel IP Corporation High linearity push-pull common-gate amplifier
JP6397374B2 (ja) * 2015-07-01 2018-09-26 日本電信電話株式会社 増幅器
JP6623133B2 (ja) * 2016-09-05 2019-12-18 株式会社東芝 高周波半導体増幅回路
US10243523B2 (en) * 2016-10-04 2019-03-26 The Regents Of The University Of California Ultra-broadband transimpedance amplifiers (tia) for optical fiber communications
US10931249B2 (en) * 2018-06-12 2021-02-23 Kandou Labs, S.A. Amplifier with adjustable high-frequency gain using varactor diodes

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030030478A1 (en) 1999-12-28 2003-02-13 Analog Devices, Inc. RMS-DC converter having gain stages with variable weighting coefficients
JP2007520163A (ja) 2004-01-27 2007-07-19 ノースロップ・グラマン・コーポレーション 差動回路用複合負荷
WO2012141008A1 (ja) 2011-04-11 2012-10-18 日本電気株式会社 半導体集積回路

Also Published As

Publication number Publication date
JP2025090809A (ja) 2025-06-17
JP2021534689A (ja) 2021-12-09
WO2020047425A1 (en) 2020-03-05
US20200076374A1 (en) 2020-03-05
CN112534713A (zh) 2021-03-19
EP3844871A1 (en) 2021-07-07
US12126309B2 (en) 2024-10-22
EP3844871A4 (en) 2021-09-08

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