CN112534713A - 用于电压缓冲的方法和装置 - Google Patents

用于电压缓冲的方法和装置 Download PDF

Info

Publication number
CN112534713A
CN112534713A CN201980052221.4A CN201980052221A CN112534713A CN 112534713 A CN112534713 A CN 112534713A CN 201980052221 A CN201980052221 A CN 201980052221A CN 112534713 A CN112534713 A CN 112534713A
Authority
CN
China
Prior art keywords
terminal
voltage
current
input
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201980052221.4A
Other languages
English (en)
Chinese (zh)
Inventor
S·阿克塔尔
S·桑卡兰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of CN112534713A publication Critical patent/CN112534713A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/181—Low-frequency amplifiers, e.g. audio preamplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/181—Low-frequency amplifiers, e.g. audio preamplifiers
    • H03F3/183—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/50—Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/28—Impedance matching networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/306—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in junction-FET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/03—Indexing scheme relating to amplifiers the amplifier being designed for audio applications
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/318—A matching circuit being used as coupling element between two amplifying stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/50—Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower
    • H03F3/505—Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower with field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Amplifiers (AREA)
CN201980052221.4A 2018-08-31 2019-08-30 用于电压缓冲的方法和装置 Pending CN112534713A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862725832P 2018-08-31 2018-08-31
US62/725,832 2018-08-31
PCT/US2019/049089 WO2020047425A1 (en) 2018-08-31 2019-08-30 Methods and apparatus for voltage buffering

Publications (1)

Publication Number Publication Date
CN112534713A true CN112534713A (zh) 2021-03-19

Family

ID=69640386

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980052221.4A Pending CN112534713A (zh) 2018-08-31 2019-08-30 用于电压缓冲的方法和装置

Country Status (5)

Country Link
US (1) US12126309B2 (https=)
EP (1) EP3844871A4 (https=)
JP (2) JP7698169B2 (https=)
CN (1) CN112534713A (https=)
WO (1) WO2020047425A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113114253B (zh) * 2021-05-28 2024-07-23 西北核技术研究所 一种应用于超高速数据采集系统的模拟信号调理系统
US12519435B2 (en) 2022-10-20 2026-01-06 Macom Technology Solutions Holdings, Inc. Adaptive temperature peaking control for wideband amplifiers

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1127443A (zh) * 1994-09-19 1996-07-24 阿尔卑斯电气株式会社 基极接地晶体管放大器
CN1645741A (zh) * 2004-01-23 2005-07-27 松下电器产业株式会社 低噪声差动偏置电路以及差动信号处理装置
JP2006237866A (ja) * 2005-02-23 2006-09-07 Matsushita Electric Ind Co Ltd 高周波電力増幅器及びその出力電力調整方法
KR20090093352A (ko) * 2008-02-29 2009-09-02 인티그런트 테크놀로지즈(주) 선형성이 향상된 차동 증폭 회로
CN201608817U (zh) * 2009-11-30 2010-10-13 康佳集团股份有限公司 一种视频输出电路及视频终端
US20180069508A1 (en) * 2016-09-05 2018-03-08 Kabushiki Kaisha Toshiba High-frequency semiconductor amplifier circuit
EP3319231A1 (en) * 2015-07-01 2018-05-09 Nippon Telegraph And Telephone Corporation Amplifier

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2719425B1 (fr) * 1994-04-29 1996-08-09 Sgs Thomson Microelectronics Amplificateur différentiel à réglage de mode commun.
US6175279B1 (en) * 1997-12-09 2001-01-16 Qualcomm Incorporated Amplifier with adjustable bias current
US6163216A (en) 1998-12-18 2000-12-19 Texas Instruments Tucson Corporation Wideband operational amplifier
US6437630B1 (en) * 1999-12-28 2002-08-20 Analog Devices, Inc. RMS-DC converter having gain stages with variable weighting coefficients
US6396347B1 (en) * 2001-05-03 2002-05-28 International Business Machines Corporation Low-power, low-noise dual gain amplifier topology and method
US6437612B1 (en) * 2001-11-28 2002-08-20 Institute Of Microelectronics Inductor-less RF/IF CMOS buffer for 50Ω off-chip load driving
JP2004253919A (ja) 2003-02-18 2004-09-09 Sony Corp エミッタフォロワ回路及び同回路を有する位相シフト回路
US7099646B1 (en) * 2004-01-27 2006-08-29 Marvell International Ltd. Signal mixer having a single-ended input and a differential output
US7129780B2 (en) * 2004-01-27 2006-10-31 Northrop Grumman Corporation Compound load for differential circuits
US7145395B2 (en) * 2004-09-16 2006-12-05 Qualcomm Incorporated Linear transconductance cell with wide tuning range
US7439805B1 (en) * 2006-06-08 2008-10-21 Rf Micro Devices, Inc. Enhancement-depletion Darlington device
US7746042B2 (en) * 2006-10-05 2010-06-29 Advanced Analogic Technologies, Inc. Low-noise DC/DC converter with controlled diode conduction
TWI352500B (en) * 2009-09-16 2011-11-11 Ind Tech Res Inst Balun amplifier
US9306541B2 (en) * 2011-04-11 2016-04-05 Nec Corporation Semiconductor integrated circuit
US9537457B2 (en) * 2015-02-24 2017-01-03 Intel IP Corporation High linearity push-pull common-gate amplifier
US10243523B2 (en) * 2016-10-04 2019-03-26 The Regents Of The University Of California Ultra-broadband transimpedance amplifiers (tia) for optical fiber communications
US10931249B2 (en) * 2018-06-12 2021-02-23 Kandou Labs, S.A. Amplifier with adjustable high-frequency gain using varactor diodes

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1127443A (zh) * 1994-09-19 1996-07-24 阿尔卑斯电气株式会社 基极接地晶体管放大器
CN1645741A (zh) * 2004-01-23 2005-07-27 松下电器产业株式会社 低噪声差动偏置电路以及差动信号处理装置
JP2006237866A (ja) * 2005-02-23 2006-09-07 Matsushita Electric Ind Co Ltd 高周波電力増幅器及びその出力電力調整方法
KR20090093352A (ko) * 2008-02-29 2009-09-02 인티그런트 테크놀로지즈(주) 선형성이 향상된 차동 증폭 회로
CN201608817U (zh) * 2009-11-30 2010-10-13 康佳集团股份有限公司 一种视频输出电路及视频终端
EP3319231A1 (en) * 2015-07-01 2018-05-09 Nippon Telegraph And Telephone Corporation Amplifier
US20180069508A1 (en) * 2016-09-05 2018-03-08 Kabushiki Kaisha Toshiba High-frequency semiconductor amplifier circuit

Also Published As

Publication number Publication date
JP2025090809A (ja) 2025-06-17
JP2021534689A (ja) 2021-12-09
WO2020047425A1 (en) 2020-03-05
US20200076374A1 (en) 2020-03-05
EP3844871A1 (en) 2021-07-07
JP7698169B2 (ja) 2025-06-25
US12126309B2 (en) 2024-10-22
EP3844871A4 (en) 2021-09-08

Similar Documents

Publication Publication Date Title
JP4087336B2 (ja) 能動バイアス回路
US9584085B2 (en) Amplifying system
US8669782B1 (en) Active biasing in metal oxide semiconductor (MOS) differential pairs
JP6229369B2 (ja) 電力増幅器
KR101670477B1 (ko) 클래스 ab 오디오 증폭기 출력단 전압 보호 방법 및 장치
JP2025090809A (ja) 電圧バッファリングのための方法及び装置
US10389312B2 (en) Bias modulation active linearization for broadband amplifiers
US10848109B2 (en) Bias modulation active linearization for broadband amplifiers
US8067958B2 (en) Mitigating side effects of impedance transformation circuits
CN102474224B (zh) 放大器级
CN110350881B (zh) 衰减器系统
KR102133926B1 (ko) 낮은 위상 변화를 갖는 광대역 가변 이득 증폭기
WO2024141091A1 (zh) 功率放大器及电子设备
GB2436952A (en) Switched gain low noise amplifier
WO2009009652A2 (en) Segmented power amplifier
US7439805B1 (en) Enhancement-depletion Darlington device
TWI766549B (zh) 用於減少放大器中失真之裝置與方法以及具有放大器電路之系統
CN1258870C (zh) 功率晶体管的补偿电路和方法
US5498997A (en) Transformerless audio amplifier
US20100098268A1 (en) High-voltage output amplifier for audio systems
US7279973B1 (en) H-bridge utilizing intermediate switching phase(s)
US12562295B2 (en) Trimming resistor using modulated signal
US20240364277A1 (en) Amplifier with cascode arrangement
CN121488404A (zh) 电压放大器
US20090121789A1 (en) Device comprising a feedback-less gain controlled amplifier

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination