JP7686016B2 - ＳｉＣ基板及びＳｉＣ複合基板 - Google Patents

ＳｉＣ基板及びＳｉＣ複合基板 Download PDF

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Publication number
JP7686016B2
JP7686016B2 JP2022579778A JP2022579778A JP7686016B2 JP 7686016 B2 JP7686016 B2 JP 7686016B2 JP 2022579778 A JP2022579778 A JP 2022579778A JP 2022579778 A JP2022579778 A JP 2022579778A JP 7686016 B2 JP7686016 B2 JP 7686016B2
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Japan
Prior art keywords
sic
substrate
layer
oriented
sic layer
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JP2022579778A
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Japanese (ja)
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JPWO2024042591A1 (https=
Inventor
勇輝 浦田
潔 松島
潤 吉川
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NGK Insulators Ltd
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NGK Insulators Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2022579778A 2022-08-22 2022-08-22 ＳｉＣ基板及びＳｉＣ複合基板 Active JP7686016B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/031636 WO2024042591A1 (ja) 2022-08-22 2022-08-22 ＳｉＣ基板及びＳｉＣ複合基板

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JPWO2024042591A1 JPWO2024042591A1 (https=) 2024-02-29
JP7686016B2 true JP7686016B2 (ja) 2025-05-30

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JP2022579778A Active JP7686016B2 (ja) 2022-08-22 2022-08-22 ＳｉＣ基板及びＳｉＣ複合基板

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US (1) US20250126865A1 (https=)
EP (1) EP4579006A1 (https=)
JP (1) JP7686016B2 (https=)
CN (1) CN119654452A (https=)
WO (1) WO2024042591A1 (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014162649A (ja) 2013-02-21 2014-09-08 Mitsubishi Electric Corp ＳｉＣ基板、ＳｉＣ基板の製造方法、ＳｉＣエピタキシャル基板
JP2019019037A (ja) 2017-07-20 2019-02-07 国立大学法人名古屋大学 炭化ケイ素単結晶の製造方法
JP2019112258A (ja) 2017-12-22 2019-07-11 昭和電工株式会社 ＳｉＣインゴット及びＳｉＣインゴットの製造方法
WO2020255343A1 (ja) 2019-06-20 2020-12-24 三菱電機株式会社 炭化ケイ素単結晶、半導体素子
WO2022168372A1 (ja) 2021-02-05 2022-08-11 日本碍子株式会社 希土類含有ＳｉＣ基板及びそれを用いたＳｉＣ複合基板

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020195196A1 (ja) * 2019-03-27 2020-10-01 日本碍子株式会社 ＳｉＣ複合基板及び半導体デバイス用複合基板

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014162649A (ja) 2013-02-21 2014-09-08 Mitsubishi Electric Corp ＳｉＣ基板、ＳｉＣ基板の製造方法、ＳｉＣエピタキシャル基板
JP2019019037A (ja) 2017-07-20 2019-02-07 国立大学法人名古屋大学 炭化ケイ素単結晶の製造方法
JP2019112258A (ja) 2017-12-22 2019-07-11 昭和電工株式会社 ＳｉＣインゴット及びＳｉＣインゴットの製造方法
WO2020255343A1 (ja) 2019-06-20 2020-12-24 三菱電機株式会社 炭化ケイ素単結晶、半導体素子
WO2022168372A1 (ja) 2021-02-05 2022-08-11 日本碍子株式会社 希土類含有ＳｉＣ基板及びそれを用いたＳｉＣ複合基板

Also Published As

Publication number Publication date
CN119654452A (zh) 2025-03-18
JPWO2024042591A1 (https=) 2024-02-29
WO2024042591A1 (ja) 2024-02-29
EP4579006A1 (en) 2025-07-02
US20250126865A1 (en) 2025-04-17

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