CN119654452A - SiC基板及SiC复合基板 - Google Patents
SiC基板及SiC复合基板 Download PDFInfo
- Publication number
- CN119654452A CN119654452A CN202280095382.3A CN202280095382A CN119654452A CN 119654452 A CN119654452 A CN 119654452A CN 202280095382 A CN202280095382 A CN 202280095382A CN 119654452 A CN119654452 A CN 119654452A
- Authority
- CN
- China
- Prior art keywords
- sic
- substrate
- biaxially oriented
- layer
- bpd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
- C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2022/031636 WO2024042591A1 (ja) | 2022-08-22 | 2022-08-22 | ＳｉＣ基板及びＳｉＣ複合基板 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN119654452A true CN119654452A (zh) | 2025-03-18 |
Family
ID=90012690
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202280095382.3A Pending CN119654452A (zh) | 2022-08-22 | 2022-08-22 | SiC基板及SiC复合基板 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250126865A1 (https=) |
| EP (1) | EP4579006A1 (https=) |
| JP (1) | JP7686016B2 (https=) |
| CN (1) | CN119654452A (https=) |
| WO (1) | WO2024042591A1 (https=) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014162649A (ja) | 2013-02-21 | 2014-09-08 | Mitsubishi Electric Corp | ＳｉＣ基板、ＳｉＣ基板の製造方法、ＳｉＣエピタキシャル基板 |
| JP6968408B2 (ja) | 2017-07-20 | 2021-11-17 | 国立大学法人東海国立大学機構 | 炭化ケイ素単結晶の製造方法 |
| JP7422479B2 (ja) * | 2017-12-22 | 2024-01-26 | 株式会社レゾナック | ＳｉＣインゴット及びＳｉＣインゴットの製造方法 |
| WO2020195196A1 (ja) * | 2019-03-27 | 2020-10-01 | 日本碍子株式会社 | ＳｉＣ複合基板及び半導体デバイス用複合基板 |
| WO2020255343A1 (ja) * | 2019-06-20 | 2020-12-24 | 三菱電機株式会社 | 炭化ケイ素単結晶、半導体素子 |
| WO2022168372A1 (ja) | 2021-02-05 | 2022-08-11 | 日本碍子株式会社 | 希土類含有ＳｉＣ基板及びそれを用いたＳｉＣ複合基板 |
-
2022
- 2022-08-22 EP EP22956419.0A patent/EP4579006A1/en active Pending
- 2022-08-22 WO PCT/JP2022/031636 patent/WO2024042591A1/ja not_active Ceased
- 2022-08-22 CN CN202280095382.3A patent/CN119654452A/zh active Pending
- 2022-08-22 JP JP2022579778A patent/JP7686016B2/ja active Active
-
2024
- 2024-12-20 US US18/989,246 patent/US20250126865A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2024042591A1 (https=) | 2024-02-29 |
| WO2024042591A1 (ja) | 2024-02-29 |
| JP7686016B2 (ja) | 2025-05-30 |
| EP4579006A1 (en) | 2025-07-02 |
| US20250126865A1 (en) | 2025-04-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20210404090A1 (en) | Ground substrate and method for producing same | |
| CN114901875B (zh) | 含有稀土的SiC基板和SiC外延层的制造方法 | |
| CN114761629B (zh) | 双轴取向SiC复合基板以及半导体器件用复合基板 | |
| JP7538900B2 (ja) | 希土類含有ＳｉＣ基板及びそれを用いたＳｉＣ複合基板 | |
| US12080551B2 (en) | SiC composite substrate including biaxially oreinted SiC layer and semiconductor device | |
| CN113614293A (zh) | 基底基板 | |
| WO2023062850A1 (ja) | 希土類含有ＳｉＣ基板及びＳｉＣ複合基板 | |
| US12431440B2 (en) | SiC composite substrate and composite substrate for semiconductor device | |
| US20240186380A1 (en) | SiC SUBSTRATE SiC COMPOSITE SUBSTRATE | |
| JP7686016B2 (ja) | ＳｉＣ基板及びＳｉＣ複合基板 | |
| US20260022494A1 (en) | SiC SUBSTRATE AND SiC COMPOSITE SUBSTRATE | |
| JP7104266B1 (ja) | 希土類含有ＳｉＣ基板及びＳｉＣ複合基板 | |
| US20260043171A1 (en) | SiC SUBSTRATE AND SiC COMPOSITE SUBSTRATE | |
| US20250391657A1 (en) | Base substrate | |
| WO2025083939A1 (ja) | ＳｉＣ基板及びＳｉＣ複合基板 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |