JP7678090B2 - 誘電体に対する選択性を有した半導体、金属、または金属酸化物の原子層エッチング - Google Patents

誘電体に対する選択性を有した半導体、金属、または金属酸化物の原子層エッチング Download PDF

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JP7678090B2
JP7678090B2 JP2023513308A JP2023513308A JP7678090B2 JP 7678090 B2 JP7678090 B2 JP 7678090B2 JP 2023513308 A JP2023513308 A JP 2023513308A JP 2023513308 A JP2023513308 A JP 2023513308A JP 7678090 B2 JP7678090 B2 JP 7678090B2
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substrate
semiconductor
halogen species
halide
activation energy
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JP2023540034A (ja
JP2023540034A5 (enExample
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リル・トールステン・ベルント
フィッシャー・アンドレアス
ロウトザン・アーロン・リン
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2023513308A 2020-09-03 2021-08-20 誘電体に対する選択性を有した半導体、金属、または金属酸化物の原子層エッチング Active JP7678090B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202062706703P 2020-09-03 2020-09-03
US62/706,703 2020-09-03
PCT/US2021/046878 WO2022051113A1 (en) 2020-09-03 2021-08-20 Atomic layer etching of a semiconductor, a metal, or a metal oxide with selectivity to a dielectric

Publications (3)

Publication Number Publication Date
JP2023540034A JP2023540034A (ja) 2023-09-21
JP2023540034A5 JP2023540034A5 (enExample) 2024-08-26
JP7678090B2 true JP7678090B2 (ja) 2025-05-15

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JP2023513308A Active JP7678090B2 (ja) 2020-09-03 2021-08-20 誘電体に対する選択性を有した半導体、金属、または金属酸化物の原子層エッチング

Country Status (4)

Country Link
US (1) US20230274939A1 (enExample)
JP (1) JP7678090B2 (enExample)
KR (1) KR20230057305A (enExample)
WO (1) WO2022051113A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021178399A1 (en) 2020-03-06 2021-09-10 Lam Research Corporation Atomic layer etching of molybdenum
WO2022197728A1 (en) 2021-03-18 2022-09-22 Lam Research Corporation Etching of indium gallium zinc oxide
JP7709946B2 (ja) * 2022-09-22 2025-07-17 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、プログラム、及び基板処理装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000150489A (ja) 1995-08-24 2000-05-30 Univ Nagoya ラジカル制御による微細加工方法および装置
US20150132961A1 (en) 2011-11-30 2015-05-14 Applied Materials, Inc. Methods For Atomic Layer Etching
WO2020014065A1 (en) 2018-07-09 2020-01-16 Lam Research Corporation Electron excitation atomic layer etch

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3386287B2 (ja) * 1995-05-08 2003-03-17 堀池 靖浩 プラズマエッチング装置
JP3611729B2 (ja) * 1998-08-26 2005-01-19 セントラル硝子株式会社 エッチングガス
US6559076B1 (en) * 1999-08-19 2003-05-06 Micron Technology, Inc. Method of removing free halogen from a halogenated polymer insulating layer of a semiconductor device
US7141505B2 (en) * 2003-06-27 2006-11-28 Lam Research Corporation Method for bilayer resist plasma etch
US8883028B2 (en) * 2011-12-28 2014-11-11 Lam Research Corporation Mixed mode pulsing etching in plasma processing systems
WO2017205658A1 (en) * 2016-05-25 2017-11-30 The Regents Of The University Of Colorado, A Body Corporate Atomic layer etching on microdevices and nanodevices
KR20180045104A (ko) * 2016-10-24 2018-05-04 삼성전자주식회사 원자층 식각 방법 및 이를 포함하는 반도체 제조 방법
US10283319B2 (en) * 2016-12-22 2019-05-07 Asm Ip Holding B.V. Atomic layer etching processes
US10242885B2 (en) * 2017-05-26 2019-03-26 Applied Materials, Inc. Selective dry etching of metal films comprising multiple metal oxides

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000150489A (ja) 1995-08-24 2000-05-30 Univ Nagoya ラジカル制御による微細加工方法および装置
US20150132961A1 (en) 2011-11-30 2015-05-14 Applied Materials, Inc. Methods For Atomic Layer Etching
WO2020014065A1 (en) 2018-07-09 2020-01-16 Lam Research Corporation Electron excitation atomic layer etch

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US20230274939A1 (en) 2023-08-31
JP2023540034A (ja) 2023-09-21
KR20230057305A (ko) 2023-04-28
WO2022051113A1 (en) 2022-03-10

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