JP7672778B2 - 窒化物半導体紫外線発光素子の製造方法、及び、窒化物半導体紫外線発光素子 - Google Patents

窒化物半導体紫外線発光素子の製造方法、及び、窒化物半導体紫外線発光素子 Download PDF

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JP7672778B2
JP7672778B2 JP2022573814A JP2022573814A JP7672778B2 JP 7672778 B2 JP7672778 B2 JP 7672778B2 JP 2022573814 A JP2022573814 A JP 2022573814A JP 2022573814 A JP2022573814 A JP 2022573814A JP 7672778 B2 JP7672778 B2 JP 7672778B2
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algan
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光 平野
陽祐 長澤
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Nikkiso Co Ltd
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Nikkiso Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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JP2022573814A 2021-01-05 2021-01-05 窒化物半導体紫外線発光素子の製造方法、及び、窒化物半導体紫外線発光素子 Active JP7672778B2 (ja)

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Citations (11)

* Cited by examiner, † Cited by third party
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JP2005033096A (ja) 2003-07-10 2005-02-03 Ricoh Opt Ind Co Ltd 発光を利用したドライエッチング方法、ドライエッチング制御装置及びその制御装置を備えたドライエッチング装置
JP2007266574A (ja) 2006-02-28 2007-10-11 Sanyo Electric Co Ltd 半導体レーザ素子及び半導体レーザ素子の製造方法
JP2009123969A (ja) 2007-11-15 2009-06-04 Tohoku Univ 紫外線窒化物半導体発光素子およびその製造方法
JP2011035156A (ja) 2009-07-31 2011-02-17 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子の製造方法
WO2013021464A1 (ja) 2011-08-09 2013-02-14 創光科学株式会社 窒化物半導体紫外線発光素子
US20140103289A1 (en) 2010-04-30 2014-04-17 Yitao Liao High efficiency ultraviolet light emitting diode with band structure potential fluctuations
WO2016157518A1 (ja) 2015-04-03 2016-10-06 創光科学株式会社 窒化物半導体紫外線発光素子及び窒化物半導体紫外線発光装置
WO2017013729A1 (ja) 2015-07-21 2017-01-26 創光科学株式会社 窒化物半導体紫外線発光素子
JP2019033284A (ja) 2018-11-01 2019-02-28 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
WO2019102557A1 (ja) 2017-11-22 2019-05-31 創光科学株式会社 窒化物半導体発光素子
WO2019159265A1 (ja) 2018-02-14 2019-08-22 創光科学株式会社 窒化物半導体紫外線発光素子

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JPH0755905A (ja) * 1993-08-10 1995-03-03 Hitachi Ltd スペクトル分解方法
JP3192846B2 (ja) * 1993-11-25 2001-07-30 株式会社東芝 汚染元素濃度分析方法および分析装置
JP3630919B2 (ja) * 1997-05-20 2005-03-23 日本電子株式会社 スペクトルのピーク判定方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005033096A (ja) 2003-07-10 2005-02-03 Ricoh Opt Ind Co Ltd 発光を利用したドライエッチング方法、ドライエッチング制御装置及びその制御装置を備えたドライエッチング装置
JP2007266574A (ja) 2006-02-28 2007-10-11 Sanyo Electric Co Ltd 半導体レーザ素子及び半導体レーザ素子の製造方法
JP2009123969A (ja) 2007-11-15 2009-06-04 Tohoku Univ 紫外線窒化物半導体発光素子およびその製造方法
JP2011035156A (ja) 2009-07-31 2011-02-17 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子の製造方法
US20140103289A1 (en) 2010-04-30 2014-04-17 Yitao Liao High efficiency ultraviolet light emitting diode with band structure potential fluctuations
WO2013021464A1 (ja) 2011-08-09 2013-02-14 創光科学株式会社 窒化物半導体紫外線発光素子
WO2016157518A1 (ja) 2015-04-03 2016-10-06 創光科学株式会社 窒化物半導体紫外線発光素子及び窒化物半導体紫外線発光装置
WO2017013729A1 (ja) 2015-07-21 2017-01-26 創光科学株式会社 窒化物半導体紫外線発光素子
WO2019102557A1 (ja) 2017-11-22 2019-05-31 創光科学株式会社 窒化物半導体発光素子
WO2019159265A1 (ja) 2018-02-14 2019-08-22 創光科学株式会社 窒化物半導体紫外線発光素子
JP2019033284A (ja) 2018-11-01 2019-02-28 日機装株式会社 半導体発光素子および半導体発光素子の製造方法

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Title
KATAOKA, K. et al.，Development of polychromatic ultraviolet light-emitting diodes based on three-dimensional AlGaN quantum wells，Applied Physics Express，日本，The Japan Society of Applied Physics，2025年04月10日，Vol.10，p.121001-1 - p.121001-4，http://doi.org/10.7567/APEX.10.121001
KOJIMA, K., et al.，Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an A，Applied Physics Letters，米国，AIP Publishing，2019年01月07日，Vol. 114，p.011102-1 - p.011102-5
LIAO, Y. et. al.,，Deep Ultraviolet LEDs based on AlGaN Alloys by Plasma-assisted Molecular Beam Epitaxy，CLEO/QELS: 2010 Laser Science to Photonic Applications，米国，2010年，https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5499517
MOUSTAKAS, T.D.，Ultraviolet optoelectronic devices based on AlGaN alloys grown by molecular beam epitaxy，MRS Communications，2016年，VOLUME 6, ISSUE 3，p.247 - p.269，doi:10.1557/mrc.2016.26
NAGASAWA Y., et. al.,，Detailed analysis of Ga-rich current pathways created in an n-Al0.7Ga0.3N layer grown on an AlN template with dense macrosteps，Applied Physics Express，13，日本，The Japan Society of Applied Physics，2020年，p.124001-1 - p.124001-5
NAGASAWA, Y. et. al.,，Two-dimensional analysis of the nonuniform quantum yields of multiple quantum wells for AlGaN-based deep-ultraviolet LEDs grown on AlN templates with dense macrosteps using cathodoluminescence spectroscopy，Journal of Applied Physics，VOL.126，米国，Scitation，2019年12月，p.215703-1 - p.215703-10，DOI: 10.1063/1.5125623
NAGASAWA, Y., et al.，Comparison of AlxGa1-xN multiple quantum wells designed for 265 and 285 nm deep-ultraviolet LEDs gro，Applied Physics Express，日本，The Japan Society of Applied Physics，2019年06月04日，Vol.12，p.064009-1 - p.064009-6

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WO2022149183A1 (ja) 2022-07-14
JPWO2022149183A1 (https=) 2022-07-14

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