JPWO2022149183A1 - - Google Patents

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Publication number
JPWO2022149183A1
JPWO2022149183A1 JP2022573814A JP2022573814A JPWO2022149183A1 JP WO2022149183 A1 JPWO2022149183 A1 JP WO2022149183A1 JP 2022573814 A JP2022573814 A JP 2022573814A JP 2022573814 A JP2022573814 A JP 2022573814A JP WO2022149183 A1 JPWO2022149183 A1 JP WO2022149183A1
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JP
Japan
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JP2022573814A
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Japanese (ja)
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JP7672778B2 (ja
JPWO2022149183A5 (https=
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
JP2022573814A 2021-01-05 2021-01-05 窒化物半導体紫外線発光素子の製造方法、及び、窒化物半導体紫外線発光素子 Active JP7672778B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/000078 WO2022149183A1 (ja) 2021-01-05 2021-01-05 窒化物半導体紫外線発光素子の製造方法、及び、窒化物半導体紫外線発光素子

Publications (3)

Publication Number Publication Date
JPWO2022149183A1 true JPWO2022149183A1 (https=) 2022-07-14
JPWO2022149183A5 JPWO2022149183A5 (https=) 2023-12-19
JP7672778B2 JP7672778B2 (ja) 2025-05-08

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JP2022573814A Active JP7672778B2 (ja) 2021-01-05 2021-01-05 窒化物半導体紫外線発光素子の製造方法、及び、窒化物半導体紫外線発光素子

Country Status (2)

Country Link
JP (1) JP7672778B2 (https=)
WO (1) WO2022149183A1 (https=)

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0755905A (ja) * 1993-08-10 1995-03-03 Hitachi Ltd スペクトル分解方法
JPH07146259A (ja) * 1993-11-25 1995-06-06 Toshiba Corp 汚染元素濃度分析装置
JPH10318837A (ja) * 1997-05-20 1998-12-04 Jeol Ltd スペクトルのピーク判定方法
JP2005033096A (ja) * 2003-07-10 2005-02-03 Ricoh Opt Ind Co Ltd 発光を利用したドライエッチング方法、ドライエッチング制御装置及びその制御装置を備えたドライエッチング装置
JP2007266574A (ja) * 2006-02-28 2007-10-11 Sanyo Electric Co Ltd 半導体レーザ素子及び半導体レーザ素子の製造方法
JP2009123969A (ja) * 2007-11-15 2009-06-04 Tohoku Univ 紫外線窒化物半導体発光素子およびその製造方法
JP2011035156A (ja) * 2009-07-31 2011-02-17 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子の製造方法
WO2013021464A1 (ja) * 2011-08-09 2013-02-14 創光科学株式会社 窒化物半導体紫外線発光素子
US20140103289A1 (en) * 2010-04-30 2014-04-17 Yitao Liao High efficiency ultraviolet light emitting diode with band structure potential fluctuations
WO2016157518A1 (ja) * 2015-04-03 2016-10-06 創光科学株式会社 窒化物半導体紫外線発光素子及び窒化物半導体紫外線発光装置
WO2017013729A1 (ja) * 2015-07-21 2017-01-26 創光科学株式会社 窒化物半導体紫外線発光素子
JP2019033284A (ja) * 2018-11-01 2019-02-28 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
WO2019102557A1 (ja) * 2017-11-22 2019-05-31 創光科学株式会社 窒化物半導体発光素子
WO2019159265A1 (ja) * 2018-02-14 2019-08-22 創光科学株式会社 窒化物半導体紫外線発光素子

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0755905A (ja) * 1993-08-10 1995-03-03 Hitachi Ltd スペクトル分解方法
JPH07146259A (ja) * 1993-11-25 1995-06-06 Toshiba Corp 汚染元素濃度分析装置
JPH10318837A (ja) * 1997-05-20 1998-12-04 Jeol Ltd スペクトルのピーク判定方法
JP2005033096A (ja) * 2003-07-10 2005-02-03 Ricoh Opt Ind Co Ltd 発光を利用したドライエッチング方法、ドライエッチング制御装置及びその制御装置を備えたドライエッチング装置
JP2007266574A (ja) * 2006-02-28 2007-10-11 Sanyo Electric Co Ltd 半導体レーザ素子及び半導体レーザ素子の製造方法
JP2009123969A (ja) * 2007-11-15 2009-06-04 Tohoku Univ 紫外線窒化物半導体発光素子およびその製造方法
JP2011035156A (ja) * 2009-07-31 2011-02-17 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子の製造方法
US20140103289A1 (en) * 2010-04-30 2014-04-17 Yitao Liao High efficiency ultraviolet light emitting diode with band structure potential fluctuations
WO2013021464A1 (ja) * 2011-08-09 2013-02-14 創光科学株式会社 窒化物半導体紫外線発光素子
WO2016157518A1 (ja) * 2015-04-03 2016-10-06 創光科学株式会社 窒化物半導体紫外線発光素子及び窒化物半導体紫外線発光装置
WO2017013729A1 (ja) * 2015-07-21 2017-01-26 創光科学株式会社 窒化物半導体紫外線発光素子
WO2019102557A1 (ja) * 2017-11-22 2019-05-31 創光科学株式会社 窒化物半導体発光素子
WO2019159265A1 (ja) * 2018-02-14 2019-08-22 創光科学株式会社 窒化物半導体紫外線発光素子
JP2019033284A (ja) * 2018-11-01 2019-02-28 日機装株式会社 半導体発光素子および半導体発光素子の製造方法

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
KATAOKA, K. ET AL.: "Development of polychromatic ultraviolet light-emitting diodes based on three-dimensional AlGaN quan", APPLIED PHYSICS EXPRESS, vol. 10, JPN6025015126, 10 April 2025 (2025-04-10), JP, pages 121001 - 1, ISSN: 0005577614 *
KOJIMA, K., ET AL.: "Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an A", APPLIED PHYSICS LETTERS, vol. 114, JPN6020044874, 7 January 2019 (2019-01-07), US, pages 011102 - 1, ISSN: 0005475205 *
LIAO, Y. ET. AL.,: "Deep Ultraviolet LEDs based on AlGaN Alloys by Plasma-assisted Molecular Beam Epitaxy", CLEO/QELS: 2010 LASER SCIENCE TO PHOTONIC APPLICATIONS, JPN6025015127, 2010, US, ISSN: 0005577613 *
MOUSTAKAS, T.D.: "Ultraviolet optoelectronic devices based on AlGaN alloys grown by molecular beam epitaxy", MRS COMMUNICATIONS, vol. VOLUME 6, ISSUE 3, JPN6025015125, 2016, pages 247 - 269, ISSN: 0005577615 *
NAGASAWA Y., ET. AL.,: "Detailed analysis of Ga-rich current pathways created in an n-Al0.7Ga0.3N layer grown on an AlN temp", APPLIED PHYSICS EXPRESS, vol. 13, JPN6024048531, 2020, JP, pages 124001 - 1, ISSN: 0005475207 *
NAGASAWA, Y. ET. AL.,: "Two-dimensional analysis of the nonuniform quantum yields of multiple quantum wells for AlGaN-based", JOURNAL OF APPLIED PHYSICS, vol. 126, JPN7025001658, December 2019 (2019-12-01), US, pages 215703 - 1, ISSN: 0005577612 *
NAGASAWA, Y., ET AL.: "Comparison of AlxGa1-xN multiple quantum wells designed for 265 and 285 nm deep-ultraviolet LEDs gro", APPLIED PHYSICS EXPRESS, vol. 12, JPN6020044876, 4 June 2019 (2019-06-04), JP, pages 064009 - 1, ISSN: 0005475206 *

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Publication number Publication date
TW202243282A (zh) 2022-11-01
JP7672778B2 (ja) 2025-05-08
WO2022149183A1 (ja) 2022-07-14

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