JP7672500B2 - イオンミリング装置 - Google Patents

イオンミリング装置 Download PDF

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Publication number
JP7672500B2
JP7672500B2 JP2023550993A JP2023550993A JP7672500B2 JP 7672500 B2 JP7672500 B2 JP 7672500B2 JP 2023550993 A JP2023550993 A JP 2023550993A JP 2023550993 A JP2023550993 A JP 2023550993A JP 7672500 B2 JP7672500 B2 JP 7672500B2
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JP
Japan
Prior art keywords
rod
source
ion
electrode
ion source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023550993A
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English (en)
Japanese (ja)
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JPWO2023053437A1 (https=
Inventor
翔太 会田
久幸 高須
敦史 上野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Tech Corp filed Critical Hitachi High Tech Corp
Publication of JPWO2023053437A1 publication Critical patent/JPWO2023053437A1/ja
Application granted granted Critical
Publication of JP7672500B2 publication Critical patent/JP7672500B2/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31749—Focused ion beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Engineering & Computer Science (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Sampling And Sample Adjustment (AREA)
JP2023550993A 2021-10-01 2021-10-01 イオンミリング装置 Active JP7672500B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/036376 WO2023053437A1 (ja) 2021-10-01 2021-10-01 イオンミリング装置

Publications (2)

Publication Number Publication Date
JPWO2023053437A1 JPWO2023053437A1 (https=) 2023-04-06
JP7672500B2 true JP7672500B2 (ja) 2025-05-07

Family

ID=85782043

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023550993A Active JP7672500B2 (ja) 2021-10-01 2021-10-01 イオンミリング装置

Country Status (4)

Country Link
US (1) US20250003841A1 (https=)
JP (1) JP7672500B2 (https=)
KR (1) KR102919596B1 (https=)
WO (1) WO2023053437A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202142496U (zh) 2011-07-25 2012-02-08 中芯国际集成电路制造(上海)有限公司 离子注入机的分析器
WO2016189614A1 (ja) 2015-05-25 2016-12-01 株式会社日立ハイテクノロジーズ イオンミリング装置、及びイオンミリング方法
CN210207978U (zh) 2019-06-17 2020-03-31 德淮半导体有限公司 清洁装置及离子植入设备

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02148647A (ja) * 1988-11-30 1990-06-07 Nec Yamagata Ltd イオン注入装置のイオンソース洗浄治具及び洗浄方法
JP2708903B2 (ja) * 1989-07-31 1998-02-04 松下電器産業株式会社 イオンソースハウジング内壁のクリーニング方法およびクリーニング用治具
US7138629B2 (en) 2003-04-22 2006-11-21 Ebara Corporation Testing apparatus using charged particles and device manufacturing method using the testing apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202142496U (zh) 2011-07-25 2012-02-08 中芯国际集成电路制造(上海)有限公司 离子注入机的分析器
WO2016189614A1 (ja) 2015-05-25 2016-12-01 株式会社日立ハイテクノロジーズ イオンミリング装置、及びイオンミリング方法
CN210207978U (zh) 2019-06-17 2020-03-31 德淮半导体有限公司 清洁装置及离子植入设备

Also Published As

Publication number Publication date
KR20240046301A (ko) 2024-04-08
US20250003841A1 (en) 2025-01-02
KR102919596B1 (ko) 2026-01-29
WO2023053437A1 (ja) 2023-04-06
JPWO2023053437A1 (https=) 2023-04-06

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