JP7641972B2 - プラズマ処理システムのためのrf信号フィルタ構成 - Google Patents
プラズマ処理システムのためのrf信号フィルタ構成 Download PDFInfo
- Publication number
- JP7641972B2 JP7641972B2 JP2022547223A JP2022547223A JP7641972B2 JP 7641972 B2 JP7641972 B2 JP 7641972B2 JP 2022547223 A JP2022547223 A JP 2022547223A JP 2022547223 A JP2022547223 A JP 2022547223A JP 7641972 B2 JP7641972 B2 JP 7641972B2
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- signal
- plasma processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025027473A JP2025084822A (ja) | 2020-02-04 | 2025-02-25 | プラズマ処理システムのためのrf信号フィルタ構成 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202062970168P | 2020-02-04 | 2020-02-04 | |
| US62/970,168 | 2020-02-04 | ||
| PCT/US2021/015956 WO2021158451A1 (en) | 2020-02-04 | 2021-01-30 | Radiofrequency signal filter arrangement for plasma processing system |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025027473A Division JP2025084822A (ja) | 2020-02-04 | 2025-02-25 | プラズマ処理システムのためのrf信号フィルタ構成 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2023514548A JP2023514548A (ja) | 2023-04-06 |
| JP2023514548A5 JP2023514548A5 (https=) | 2024-01-31 |
| JP7641972B2 true JP7641972B2 (ja) | 2025-03-07 |
Family
ID=77200545
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022547223A Active JP7641972B2 (ja) | 2020-02-04 | 2021-01-30 | プラズマ処理システムのためのrf信号フィルタ構成 |
| JP2025027473A Pending JP2025084822A (ja) | 2020-02-04 | 2025-02-25 | プラズマ処理システムのためのrf信号フィルタ構成 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025027473A Pending JP2025084822A (ja) | 2020-02-04 | 2025-02-25 | プラズマ処理システムのためのrf信号フィルタ構成 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US12476082B2 (https=) |
| JP (2) | JP7641972B2 (https=) |
| KR (2) | KR20250161032A (https=) |
| CN (1) | CN115136278A (https=) |
| WO (1) | WO2021158451A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021158451A1 (en) * | 2020-02-04 | 2021-08-12 | Lam Research Corporation | Radiofrequency signal filter arrangement for plasma processing system |
| KR102824580B1 (ko) * | 2020-12-01 | 2025-06-23 | 삼성전자주식회사 | 플라즈마 공정 장치 및 이를 이용한 반도체 장치의 제조 방법 |
| KR102770730B1 (ko) * | 2021-12-30 | 2025-02-24 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011135052A (ja) | 2009-11-24 | 2011-07-07 | Tokyo Electron Ltd | プラズマ処理装置 |
| JP2014082449A (ja) | 2012-09-26 | 2014-05-08 | Toshiba Corp | プラズマ処理装置およびプラズマ処理方法 |
| JP2017228526A (ja) | 2016-06-22 | 2017-12-28 | ラム リサーチ コーポレーションLam Research Corporation | 結合リング内に電極を使用することによってエッジ領域におけるイオンの方向性を制御するためのシステム及び方法 |
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| US7196283B2 (en) * | 2000-03-17 | 2007-03-27 | Applied Materials, Inc. | Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface |
| US20040027781A1 (en) | 2002-08-12 | 2004-02-12 | Hiroji Hanawa | Low loss RF bias electrode for a plasma reactor with enhanced wafer edge RF coupling and highly efficient wafer cooling |
| US7059268B2 (en) * | 2002-12-20 | 2006-06-13 | Tokyo Electron Limited | Method, apparatus and magnet assembly for enhancing and localizing a capacitively coupled plasma |
| US20050221020A1 (en) * | 2004-03-30 | 2005-10-06 | Tokyo Electron Limited | Method of improving the wafer to wafer uniformity and defectivity of a deposited dielectric film |
| KR20060098292A (ko) * | 2005-03-11 | 2006-09-18 | 주식회사 에이디피엔지니어링 | Rf 전력 공급장치 |
| US8083890B2 (en) * | 2005-09-27 | 2011-12-27 | Lam Research Corporation | Gas modulation to control edge exclusion in a bevel edge etching plasma chamber |
| JP5031252B2 (ja) | 2006-03-30 | 2012-09-19 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US7611603B2 (en) * | 2006-03-31 | 2009-11-03 | Tokyo Electron Limited | Plasma processing apparatus having impedance varying electrodes |
| US7732728B2 (en) * | 2007-01-17 | 2010-06-08 | Lam Research Corporation | Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor |
| US7758764B2 (en) * | 2007-06-28 | 2010-07-20 | Lam Research Corporation | Methods and apparatus for substrate processing |
| US8563619B2 (en) * | 2007-06-28 | 2013-10-22 | Lam Research Corporation | Methods and arrangements for plasma processing system with tunable capacitance |
| US9017533B2 (en) * | 2008-07-15 | 2015-04-28 | Applied Materials, Inc. | Apparatus for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency RF impedance tuning |
| US8070925B2 (en) * | 2008-10-17 | 2011-12-06 | Applied Materials, Inc. | Physical vapor deposition reactor with circularly symmetric RF feed and DC feed to the sputter target |
| US20110005679A1 (en) | 2009-07-13 | 2011-01-13 | Applied Materials, Inc. | Plasma uniformity control through vhf cathode ground return with feedback stabilization of vhf cathode impedance |
| KR101151414B1 (ko) | 2010-02-23 | 2012-06-04 | 주식회사 플라즈마트 | 임피던스 정합 장치 |
| US9966236B2 (en) * | 2011-06-15 | 2018-05-08 | Lam Research Corporation | Powered grid for plasma chamber |
| US9177762B2 (en) * | 2011-11-16 | 2015-11-03 | Lam Research Corporation | System, method and apparatus of a wedge-shaped parallel plate plasma reactor for substrate processing |
| KR102011535B1 (ko) | 2011-11-24 | 2019-08-16 | 램 리써치 코포레이션 | 가요성 있는 대칭적 rf 복귀 스트랩을 갖는 플라즈마 프로세싱 챔버 |
| US9842725B2 (en) * | 2013-01-31 | 2017-12-12 | Lam Research Corporation | Using modeling to determine ion energy associated with a plasma system |
| CN104813440A (zh) * | 2012-09-26 | 2015-07-29 | 应用材料公司 | 于基板处理系统中控制温度 |
| JP6276919B2 (ja) | 2013-02-01 | 2018-02-07 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置および試料台 |
| CN105190843A (zh) * | 2013-03-15 | 2015-12-23 | 应用材料公司 | 在处理室中使用调节环来调节等离子体分布的装置和方法 |
| US10125422B2 (en) * | 2013-03-27 | 2018-11-13 | Applied Materials, Inc. | High impedance RF filter for heater with impedance tuning device |
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| US10153136B2 (en) * | 2015-08-04 | 2018-12-11 | Lam Research Corporation | Hollow RF feed with coaxial DC power feed |
| FR3058602B1 (fr) | 2016-11-08 | 2021-02-12 | Centre Nat Rech Scient | Circuit d'adaptation d'impedance entre un generateur et une charge a des frequences multiples, ensemble comportant un tel circuit et utlisation liee. |
| TWI765936B (zh) * | 2016-11-29 | 2022-06-01 | 美商東京威力科創Fsi股份有限公司 | 用以對處理腔室中之微電子基板進行處理的平移與旋轉夾頭 |
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-
2021
- 2021-01-30 WO PCT/US2021/015956 patent/WO2021158451A1/en not_active Ceased
- 2021-01-30 KR KR1020257035673A patent/KR20250161032A/ko active Pending
- 2021-01-30 JP JP2022547223A patent/JP7641972B2/ja active Active
- 2021-01-30 CN CN202180012677.5A patent/CN115136278A/zh active Pending
- 2021-01-30 US US17/793,372 patent/US12476082B2/en active Active
- 2021-01-30 KR KR1020227030614A patent/KR102878174B1/ko active Active
-
2025
- 2025-02-25 JP JP2025027473A patent/JP2025084822A/ja active Pending
- 2025-10-15 US US19/359,654 patent/US20260045452A1/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011135052A (ja) | 2009-11-24 | 2011-07-07 | Tokyo Electron Ltd | プラズマ処理装置 |
| JP2014082449A (ja) | 2012-09-26 | 2014-05-08 | Toshiba Corp | プラズマ処理装置およびプラズマ処理方法 |
| JP2017228526A (ja) | 2016-06-22 | 2017-12-28 | ラム リサーチ コーポレーションLam Research Corporation | 結合リング内に電極を使用することによってエッジ領域におけるイオンの方向性を制御するためのシステム及び方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2025084822A (ja) | 2025-06-03 |
| KR102878174B1 (ko) | 2025-10-28 |
| WO2021158451A1 (en) | 2021-08-12 |
| US20260045452A1 (en) | 2026-02-12 |
| US20230054699A1 (en) | 2023-02-23 |
| KR20220134688A (ko) | 2022-10-05 |
| KR20250161032A (ko) | 2025-11-14 |
| US12476082B2 (en) | 2025-11-18 |
| CN115136278A (zh) | 2022-09-30 |
| JP2023514548A (ja) | 2023-04-06 |
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