JP7640675B2 - ウエハの処理方法 - Google Patents

ウエハの処理方法 Download PDF

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Publication number
JP7640675B2
JP7640675B2 JP2023509120A JP2023509120A JP7640675B2 JP 7640675 B2 JP7640675 B2 JP 7640675B2 JP 2023509120 A JP2023509120 A JP 2023509120A JP 2023509120 A JP2023509120 A JP 2023509120A JP 7640675 B2 JP7640675 B2 JP 7640675B2
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Japan
Prior art keywords
wafer
support
temporary fixing
fixing material
peel strength
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JP2023509120A
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Japanese (ja)
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JPWO2022202653A1 (enrdf_load_stackoverflow
Inventor
崇 畦▲崎▼
佳一郎 春田
周穂 谷本
孝 鈴木
仁 木下
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MITSUI CHEMICALS ICT MATERIA, INC.
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MITSUI CHEMICALS ICT MATERIA, INC.
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/06—Interconnection of layers permitting easy separation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2023509120A 2021-03-26 2022-03-18 ウエハの処理方法 Active JP7640675B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021053518 2021-03-26
JP2021053518 2021-03-26
PCT/JP2022/012565 WO2022202653A1 (ja) 2021-03-26 2022-03-18 ウエハの処理方法

Publications (2)

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JPWO2022202653A1 JPWO2022202653A1 (enrdf_load_stackoverflow) 2022-09-29
JP7640675B2 true JP7640675B2 (ja) 2025-03-05

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JP2023509120A Active JP7640675B2 (ja) 2021-03-26 2022-03-18 ウエハの処理方法

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JP (1) JP7640675B2 (enrdf_load_stackoverflow)
TW (1) TW202249102A (enrdf_load_stackoverflow)
WO (1) WO2022202653A1 (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118119507A (zh) * 2021-10-27 2024-05-31 东洋纺株式会社 附有保护膜的无机基板与耐热高分子膜的层叠体

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014024861A1 (ja) 2012-08-10 2014-02-13 積水化学工業株式会社 ウエハの処理方法
JP2014072445A (ja) 2012-09-28 2014-04-21 Nitto Denko Corp 半導体装置の製造方法
JP2017079245A (ja) 2015-10-19 2017-04-27 信越化学工業株式会社 ウエハ加工体、ウエハ加工用仮接着材、及び薄型ウエハの製造方法
JP2019186470A (ja) 2018-04-16 2019-10-24 信越化学工業株式会社 回路付基板加工体及び回路付基板加工方法
JP2020038866A (ja) 2018-09-03 2020-03-12 信越化学工業株式会社 薄型ウエハの製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014024861A1 (ja) 2012-08-10 2014-02-13 積水化学工業株式会社 ウエハの処理方法
JP2014072445A (ja) 2012-09-28 2014-04-21 Nitto Denko Corp 半導体装置の製造方法
JP2017079245A (ja) 2015-10-19 2017-04-27 信越化学工業株式会社 ウエハ加工体、ウエハ加工用仮接着材、及び薄型ウエハの製造方法
JP2019186470A (ja) 2018-04-16 2019-10-24 信越化学工業株式会社 回路付基板加工体及び回路付基板加工方法
JP2020038866A (ja) 2018-09-03 2020-03-12 信越化学工業株式会社 薄型ウエハの製造方法

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Publication number Publication date
TW202249102A (zh) 2022-12-16
JPWO2022202653A1 (enrdf_load_stackoverflow) 2022-09-29
WO2022202653A1 (ja) 2022-09-29

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