JP7638930B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP7638930B2
JP7638930B2 JP2022086242A JP2022086242A JP7638930B2 JP 7638930 B2 JP7638930 B2 JP 7638930B2 JP 2022086242 A JP2022086242 A JP 2022086242A JP 2022086242 A JP2022086242 A JP 2022086242A JP 7638930 B2 JP7638930 B2 JP 7638930B2
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Japan
Prior art keywords
bias
power supply
electrode
plasma processing
period
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JP2022086242A
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English (en)
Japanese (ja)
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JP2022184788A (ja
Inventor
地塩 輿水
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2022086242A priority Critical patent/JP7638930B2/ja
Priority to CN202210600062.0A priority patent/CN115483083A/zh
Priority to US17/828,103 priority patent/US12300465B2/en
Priority to KR1020220066436A priority patent/KR20220162086A/ko
Priority to TW111120148A priority patent/TW202306441A/zh
Publication of JP2022184788A publication Critical patent/JP2022184788A/ja
Priority to JP2025025160A priority patent/JP2025075070A/ja
Application granted granted Critical
Publication of JP7638930B2 publication Critical patent/JP7638930B2/ja
Priority to US19/182,668 priority patent/US20250246408A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
JP2022086242A 2021-05-31 2022-05-26 プラズマ処理装置 Active JP7638930B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2022086242A JP7638930B2 (ja) 2021-05-31 2022-05-26 プラズマ処理装置
CN202210600062.0A CN115483083A (zh) 2021-05-31 2022-05-30 等离子体处理装置
KR1020220066436A KR20220162086A (ko) 2021-05-31 2022-05-31 플라스마 처리 장치
TW111120148A TW202306441A (zh) 2021-05-31 2022-05-31 電漿處理裝置
US17/828,103 US12300465B2 (en) 2021-05-31 2022-05-31 Plasma processing apparatus
JP2025025160A JP2025075070A (ja) 2021-05-31 2025-02-19 プラズマ処理装置
US19/182,668 US20250246408A1 (en) 2021-05-31 2025-04-18 Plasma processing apparatus

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021091015 2021-05-31
JP2021091015 2021-05-31
JP2022086242A JP7638930B2 (ja) 2021-05-31 2022-05-26 プラズマ処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025025160A Division JP2025075070A (ja) 2021-05-31 2025-02-19 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JP2022184788A JP2022184788A (ja) 2022-12-13
JP7638930B2 true JP7638930B2 (ja) 2025-03-04

Family

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JP2022086242A Active JP7638930B2 (ja) 2021-05-31 2022-05-26 プラズマ処理装置
JP2025025160A Pending JP2025075070A (ja) 2021-05-31 2025-02-19 プラズマ処理装置

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JP2025025160A Pending JP2025075070A (ja) 2021-05-31 2025-02-19 プラズマ処理装置

Country Status (5)

Country Link
US (2) US12300465B2 (https=)
JP (2) JP7638930B2 (https=)
KR (1) KR20220162086A (https=)
CN (1) CN115483083A (https=)
TW (1) TW202306441A (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7344821B2 (ja) * 2020-03-17 2023-09-14 東京エレクトロン株式会社 プラズマ処理装置
JP7450427B2 (ja) 2020-03-25 2024-03-15 東京エレクトロン株式会社 基板支持器及びプラズマ処理装置
JP7462803B2 (ja) * 2021-01-29 2024-04-05 東京エレクトロン株式会社 プラズマ処理装置及びソース高周波電力のソース周波数を制御する方法
JP7719860B2 (ja) * 2021-04-23 2025-08-06 東京エレクトロン株式会社 プラズマ処理装置及び基板処理方法
JP7761537B2 (ja) * 2022-07-20 2025-10-28 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2025526304A (ja) 2022-08-11 2025-08-13 エルジー エナジー ソリューション リミテッド コネクタモジュール
JP2024094874A (ja) * 2022-12-28 2024-07-10 東京エレクトロン株式会社 プラズマ処理装置
CN120642034A (zh) * 2023-02-14 2025-09-12 东京毅力科创株式会社 等离子体处理装置
KR20240161340A (ko) * 2023-05-04 2024-11-12 삼성전자주식회사 포커스 링 및 이를 포함하는 기판 처리 장치
JPWO2024252740A1 (https=) * 2023-06-05 2024-12-12
WO2025197664A1 (ja) * 2024-03-22 2025-09-25 東京エレクトロン株式会社 プラズマ処理装置、および静電チャック
JP7765772B1 (ja) * 2024-05-13 2025-11-07 東京エレクトロン株式会社 プラズマ処理装置及び基板支持器
WO2025238994A1 (ja) * 2024-05-13 2025-11-20 東京エレクトロン株式会社 プラズマ処理装置及び基板支持器

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008147659A (ja) 2006-12-11 2008-06-26 Tokyo Electron Ltd 弾道電子ビーム促進プラズマ処理システムにおける均一性制御方法及びシステム
JP2009231692A (ja) 2008-03-25 2009-10-08 Tokyo Electron Ltd プラズマ処理装置
JP2020004780A (ja) 2018-06-26 2020-01-09 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP2020096176A (ja) 2018-12-10 2020-06-18 東京エレクトロン株式会社 プラズマ処理装置及びエッチング方法
JP2021015930A (ja) 2019-07-16 2021-02-12 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP2021061390A (ja) 2019-10-02 2021-04-15 東京エレクトロン株式会社 プラズマ処理装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4833890B2 (ja) 2007-03-12 2011-12-07 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ分布補正方法
JP5657262B2 (ja) * 2009-03-27 2015-01-21 東京エレクトロン株式会社 プラズマ処理装置
JP5496568B2 (ja) * 2009-08-04 2014-05-21 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
WO2019065710A1 (ja) * 2017-09-29 2019-04-04 住友大阪セメント株式会社 静電チャック装置
JP7228989B2 (ja) * 2018-11-05 2023-02-27 東京エレクトロン株式会社 載置台、エッジリングの位置決め方法及び基板処理装置
JP7325294B2 (ja) * 2019-10-17 2023-08-14 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008147659A (ja) 2006-12-11 2008-06-26 Tokyo Electron Ltd 弾道電子ビーム促進プラズマ処理システムにおける均一性制御方法及びシステム
JP2009231692A (ja) 2008-03-25 2009-10-08 Tokyo Electron Ltd プラズマ処理装置
JP2020004780A (ja) 2018-06-26 2020-01-09 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP2020096176A (ja) 2018-12-10 2020-06-18 東京エレクトロン株式会社 プラズマ処理装置及びエッチング方法
JP2021015930A (ja) 2019-07-16 2021-02-12 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP2021061390A (ja) 2019-10-02 2021-04-15 東京エレクトロン株式会社 プラズマ処理装置

Also Published As

Publication number Publication date
JP2022184788A (ja) 2022-12-13
US12300465B2 (en) 2025-05-13
US20250246408A1 (en) 2025-07-31
TW202306441A (zh) 2023-02-01
JP2025075070A (ja) 2025-05-14
KR20220162086A (ko) 2022-12-07
US20220384150A1 (en) 2022-12-01
CN115483083A (zh) 2022-12-16

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