CN115483083A - 等离子体处理装置 - Google Patents

等离子体处理装置 Download PDF

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Publication number
CN115483083A
CN115483083A CN202210600062.0A CN202210600062A CN115483083A CN 115483083 A CN115483083 A CN 115483083A CN 202210600062 A CN202210600062 A CN 202210600062A CN 115483083 A CN115483083 A CN 115483083A
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CN
China
Prior art keywords
bias
power supply
plasma processing
electrode
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202210600062.0A
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English (en)
Chinese (zh)
Inventor
舆水地盐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN115483083A publication Critical patent/CN115483083A/zh
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32137Radio frequency generated discharge controlling of the discharge by modulation of energy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32137Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146Amplitude modulation, includes pulsing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge
    • H01J37/32183Matching circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • H01J37/32541Shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • H01J37/32568Relative arrangement or disposition of electrodes; moving means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • H01J37/32642Focus rings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32091Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
CN202210600062.0A 2021-05-31 2022-05-30 等离子体处理装置 Pending CN115483083A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2021-091015 2021-05-31
JP2021091015 2021-05-31
JP2022-086242 2022-05-26
JP2022086242A JP7638930B2 (ja) 2021-05-31 2022-05-26 プラズマ処理装置

Publications (1)

Publication Number Publication Date
CN115483083A true CN115483083A (zh) 2022-12-16

Family

ID=84193329

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210600062.0A Pending CN115483083A (zh) 2021-05-31 2022-05-30 等离子体处理装置

Country Status (5)

Country Link
US (2) US12300465B2 (https=)
JP (2) JP7638930B2 (https=)
KR (1) KR20220162086A (https=)
CN (1) CN115483083A (https=)
TW (1) TW202306441A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121368945A (zh) * 2024-05-13 2026-01-20 东京毅力科创株式会社 等离子体处理装置和基片支承器

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7344821B2 (ja) * 2020-03-17 2023-09-14 東京エレクトロン株式会社 プラズマ処理装置
JP7450427B2 (ja) 2020-03-25 2024-03-15 東京エレクトロン株式会社 基板支持器及びプラズマ処理装置
JP7462803B2 (ja) * 2021-01-29 2024-04-05 東京エレクトロン株式会社 プラズマ処理装置及びソース高周波電力のソース周波数を制御する方法
JP7719860B2 (ja) * 2021-04-23 2025-08-06 東京エレクトロン株式会社 プラズマ処理装置及び基板処理方法
JP7761537B2 (ja) * 2022-07-20 2025-10-28 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2025526304A (ja) 2022-08-11 2025-08-13 エルジー エナジー ソリューション リミテッド コネクタモジュール
JP2024094874A (ja) * 2022-12-28 2024-07-10 東京エレクトロン株式会社 プラズマ処理装置
CN120642034A (zh) * 2023-02-14 2025-09-12 东京毅力科创株式会社 等离子体处理装置
KR20240161340A (ko) * 2023-05-04 2024-11-12 삼성전자주식회사 포커스 링 및 이를 포함하는 기판 처리 장치
JPWO2024252740A1 (https=) * 2023-06-05 2024-12-12
WO2025197664A1 (ja) * 2024-03-22 2025-09-25 東京エレクトロン株式会社 プラズマ処理装置、および静電チャック
WO2025238994A1 (ja) * 2024-05-13 2025-11-20 東京エレクトロン株式会社 プラズマ処理装置及び基板支持器

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7829469B2 (en) * 2006-12-11 2010-11-09 Tokyo Electron Limited Method and system for uniformity control in ballistic electron beam enhanced plasma processing system
JP4833890B2 (ja) 2007-03-12 2011-12-07 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ分布補正方法
JP5294669B2 (ja) * 2008-03-25 2013-09-18 東京エレクトロン株式会社 プラズマ処理装置
JP5657262B2 (ja) * 2009-03-27 2015-01-21 東京エレクトロン株式会社 プラズマ処理装置
JP5496568B2 (ja) * 2009-08-04 2014-05-21 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
WO2019065710A1 (ja) * 2017-09-29 2019-04-04 住友大阪セメント株式会社 静電チャック装置
JP7101546B2 (ja) * 2018-06-26 2022-07-15 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
JP7228989B2 (ja) * 2018-11-05 2023-02-27 東京エレクトロン株式会社 載置台、エッジリングの位置決め方法及び基板処理装置
JP7349329B2 (ja) * 2018-12-10 2023-09-22 東京エレクトロン株式会社 プラズマ処理装置及びエッチング方法
JP7278896B2 (ja) * 2019-07-16 2023-05-22 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP7361002B2 (ja) * 2019-10-02 2023-10-13 東京エレクトロン株式会社 プラズマ処理装置
JP7325294B2 (ja) * 2019-10-17 2023-08-14 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121368945A (zh) * 2024-05-13 2026-01-20 东京毅力科创株式会社 等离子体处理装置和基片支承器

Also Published As

Publication number Publication date
JP2022184788A (ja) 2022-12-13
JP7638930B2 (ja) 2025-03-04
US12300465B2 (en) 2025-05-13
US20250246408A1 (en) 2025-07-31
TW202306441A (zh) 2023-02-01
JP2025075070A (ja) 2025-05-14
KR20220162086A (ko) 2022-12-07
US20220384150A1 (en) 2022-12-01

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