JP7618098B2 - ウエハ載置台 - Google Patents

ウエハ載置台 Download PDF

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Publication number
JP7618098B2
JP7618098B2 JP2024509335A JP2024509335A JP7618098B2 JP 7618098 B2 JP7618098 B2 JP 7618098B2 JP 2024509335 A JP2024509335 A JP 2024509335A JP 2024509335 A JP2024509335 A JP 2024509335A JP 7618098 B2 JP7618098 B2 JP 7618098B2
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JP
Japan
Prior art keywords
conductive
gas passage
gas
plug
ceramic plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2024509335A
Other languages
English (en)
Japanese (ja)
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JPWO2024157518A1 (https=
JPWO2024157518A5 (https=
Inventor
靖也 井上
達也 久野
征樹 石川
太朗 宇佐美
鎌 中村
夏樹 平田
憲司 米本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Publication of JPWO2024157518A1 publication Critical patent/JPWO2024157518A1/ja
Publication of JPWO2024157518A5 publication Critical patent/JPWO2024157518A5/ja
Application granted granted Critical
Publication of JP7618098B2 publication Critical patent/JP7618098B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2024509335A 2023-01-26 2023-08-31 ウエハ載置台 Active JP7618098B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPPCT/JP2023/002417 2023-01-26
JP2023002417 2023-01-26
PCT/JP2023/031890 WO2024157518A1 (ja) 2023-01-26 2023-08-31 ウエハ載置台

Publications (3)

Publication Number Publication Date
JPWO2024157518A1 JPWO2024157518A1 (https=) 2024-08-02
JPWO2024157518A5 JPWO2024157518A5 (https=) 2024-12-24
JP7618098B2 true JP7618098B2 (ja) 2025-01-20

Family

ID=91970183

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024509335A Active JP7618098B2 (ja) 2023-01-26 2023-08-31 ウエハ載置台

Country Status (6)

Country Link
US (1) US20240297062A1 (https=)
JP (1) JP7618098B2 (https=)
KR (1) KR102772614B1 (https=)
CN (1) CN120513512A (https=)
TW (1) TW202431469A (https=)
WO (1) WO2024157518A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102810844B1 (ko) * 2023-02-06 2025-05-22 엔지케이 인슐레이터 엘티디 서셉터
WO2026058633A1 (ja) * 2024-09-12 2026-03-19 日本碍子株式会社 ウエハ載置台

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019519927A (ja) 2016-06-07 2019-07-11 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ガス孔に開口縮小プラグを有する大電力静電チャック
JP2020150071A (ja) 2019-03-12 2020-09-17 新光電気工業株式会社 基板固定装置
WO2021241645A1 (ja) 2020-05-28 2021-12-02 京セラ株式会社 通気性プラグ、基板支持アセンブリおよびシャワープレート

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090097229A (ko) * 2008-03-11 2009-09-16 전영재 반도체 및 ｌｃｄ 제조용 정전척
US8336891B2 (en) * 2008-03-11 2012-12-25 Ngk Insulators, Ltd. Electrostatic chuck
JP5984504B2 (ja) * 2012-05-21 2016-09-06 新光電気工業株式会社 静電チャック、静電チャックの製造方法
JP5633766B2 (ja) * 2013-03-29 2014-12-03 Toto株式会社 静電チャック
US10688750B2 (en) * 2017-10-03 2020-06-23 Applied Materials, Inc. Bonding structure of E chuck to aluminum base configuration
KR102188779B1 (ko) * 2018-10-15 2020-12-08 세메스 주식회사 기판 지지 장치 및 그 제조방법
JP7402411B2 (ja) 2018-10-30 2023-12-21 Toto株式会社 静電チャック
JP7600025B2 (ja) * 2021-04-23 2024-12-16 新光電気工業株式会社 静電吸着部材及び基板固定装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019519927A (ja) 2016-06-07 2019-07-11 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ガス孔に開口縮小プラグを有する大電力静電チャック
JP2020150071A (ja) 2019-03-12 2020-09-17 新光電気工業株式会社 基板固定装置
WO2021241645A1 (ja) 2020-05-28 2021-12-02 京セラ株式会社 通気性プラグ、基板支持アセンブリおよびシャワープレート

Also Published As

Publication number Publication date
KR102772614B1 (ko) 2025-02-26
US20240297062A1 (en) 2024-09-05
JPWO2024157518A1 (https=) 2024-08-02
WO2024157518A1 (ja) 2024-08-02
CN120513512A (zh) 2025-08-19
KR20240119246A (ko) 2024-08-06
TW202431469A (zh) 2024-08-01

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