JP7604244B2 - 光電変換装置および機器 - Google Patents

光電変換装置および機器 Download PDF

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Publication number
JP7604244B2
JP7604244B2 JP2021007474A JP2021007474A JP7604244B2 JP 7604244 B2 JP7604244 B2 JP 7604244B2 JP 2021007474 A JP2021007474 A JP 2021007474A JP 2021007474 A JP2021007474 A JP 2021007474A JP 7604244 B2 JP7604244 B2 JP 7604244B2
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Japan
Prior art keywords
metal compound
layer
photoelectric conversion
film
conversion device
Prior art date
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Active
Application number
JP2021007474A
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English (en)
Japanese (ja)
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JP2022111806A5 (https=
JP2022111806A (ja
Inventor
芳栄 田中
拓海 荻野
勉 丹下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2021007474A priority Critical patent/JP7604244B2/ja
Priority to US17/575,504 priority patent/US12159946B2/en
Publication of JP2022111806A publication Critical patent/JP2022111806A/ja
Publication of JP2022111806A5 publication Critical patent/JP2022111806A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors

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  • Solid State Image Pick-Up Elements (AREA)
JP2021007474A 2021-01-20 2021-01-20 光電変換装置および機器 Active JP7604244B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2021007474A JP7604244B2 (ja) 2021-01-20 2021-01-20 光電変換装置および機器
US17/575,504 US12159946B2 (en) 2021-01-20 2022-01-13 Photoelectric conversion apparatus including metal film containing hydrogen and carbon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021007474A JP7604244B2 (ja) 2021-01-20 2021-01-20 光電変換装置および機器

Publications (3)

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JP2022111806A JP2022111806A (ja) 2022-08-01
JP2022111806A5 JP2022111806A5 (https=) 2024-01-19
JP7604244B2 true JP7604244B2 (ja) 2024-12-23

Family

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Family Applications (1)

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JP2021007474A Active JP7604244B2 (ja) 2021-01-20 2021-01-20 光電変換装置および機器

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US (1) US12159946B2 (https=)
JP (1) JP7604244B2 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11450646B1 (en) * 2012-12-22 2022-09-20 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013146973A1 (ja) 2012-03-30 2013-10-03 京セラ株式会社 太陽電池素子
JP2013219189A (ja) 2012-04-09 2013-10-24 Toshiba Corp 固体撮像装置および固体撮像装置の製造方法
JP2020010062A (ja) 2019-10-02 2020-01-16 キヤノン株式会社 光電変換装置、及び撮像システム

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4780931B2 (ja) 2003-05-13 2011-09-28 京セラ株式会社 光電変換装置および光発電装置
WO2013115275A1 (ja) 2012-01-30 2013-08-08 京セラ株式会社 光電変換素子の製造方法および光電変換素子
JP2016062998A (ja) 2014-09-16 2016-04-25 株式会社東芝 固体撮像装置
JP7214373B2 (ja) * 2018-06-04 2023-01-30 キヤノン株式会社 固体撮像素子及び固体撮像素子の製造方法、撮像システム
JP7414492B2 (ja) * 2019-11-29 2024-01-16 キヤノン株式会社 光電変換装置、光電変換装置の製造方法
TW202210653A (zh) * 2020-09-07 2022-03-16 日商半導體能源研究所股份有限公司 金屬氧化物膜、半導體裝置以及其製造方法
EP4092453A1 (en) * 2021-05-20 2022-11-23 Canon Kabushiki Kaisha Film, element, and equipment

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013146973A1 (ja) 2012-03-30 2013-10-03 京セラ株式会社 太陽電池素子
JP2013219189A (ja) 2012-04-09 2013-10-24 Toshiba Corp 固体撮像装置および固体撮像装置の製造方法
JP2020010062A (ja) 2019-10-02 2020-01-16 キヤノン株式会社 光電変換装置、及び撮像システム

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Publication number Publication date
JP2022111806A (ja) 2022-08-01
US12159946B2 (en) 2024-12-03
US20220231175A1 (en) 2022-07-21

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