JP7598029B2 - 半導体集積回路装置および半導体集積回路装置の製造方法 - Google Patents

半導体集積回路装置および半導体集積回路装置の製造方法 Download PDF

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JP7598029B2
JP7598029B2 JP2021550640A JP2021550640A JP7598029B2 JP 7598029 B2 JP7598029 B2 JP 7598029B2 JP 2021550640 A JP2021550640 A JP 2021550640A JP 2021550640 A JP2021550640 A JP 2021550640A JP 7598029 B2 JP7598029 B2 JP 7598029B2
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gate wiring
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淳司 岩堀
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Socionext Inc
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    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
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    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/853—Complementary IGFETs, e.g. CMOS comprising FinFETs
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    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6735—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes having gates fully surrounding the channels, e.g. gate-all-around
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    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
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    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
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JP2021550640A 2019-10-02 2020-09-23 半導体集積回路装置および半導体集積回路装置の製造方法 Active JP7598029B2 (ja)

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JP7640861B2 (ja) * 2019-10-18 2025-03-06 株式会社ソシオネクスト 半導体集積回路装置
WO2025158980A1 (ja) * 2024-01-24 2025-07-31 株式会社ソシオネクスト 半導体集積回路装置
WO2025158979A1 (ja) * 2024-01-24 2025-07-31 株式会社ソシオネクスト 半導体集積回路装置

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WO2018003634A1 (ja) 2016-07-01 2018-01-04 株式会社ソシオネクスト 半導体集積回路装置
WO2018025580A1 (ja) 2016-08-01 2018-02-08 株式会社ソシオネクスト 半導体集積回路装置
JP2018125542A (ja) 2012-11-07 2018-08-09 クゥアルコム・インコーポレイテッドＱｕａｌｃｏｍｍ Ｉｎｃｏｒｐｏｒａｔｅｄ 共用拡散標準セルの構造

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CN103311305B (zh) * 2013-06-13 2016-01-20 中国科学院半导体研究所 硅基横向纳米线多面栅晶体管及其制备方法
US9318607B2 (en) * 2013-07-12 2016-04-19 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
WO2017191799A1 (ja) * 2016-05-06 2017-11-09 株式会社ソシオネクスト 半導体集積回路装置
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TWI739879B (zh) * 2016-08-10 2021-09-21 日商東京威力科創股份有限公司 用於半導體裝置的延伸區域
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US10985161B2 (en) * 2019-05-31 2021-04-20 International Business Machines Corporation Single diffusion break isolation for gate-all-around field-effect transistor devices
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WO2018003634A1 (ja) 2016-07-01 2018-01-04 株式会社ソシオネクスト 半導体集積回路装置
WO2018025580A1 (ja) 2016-08-01 2018-02-08 株式会社ソシオネクスト 半導体集積回路装置

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CN114467175B (zh) 2025-04-29
JPWO2021065590A1 (https=) 2021-04-08
US20250040236A1 (en) 2025-01-30

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