JP7597785B2 - クランプ回路 - Google Patents

クランプ回路 Download PDF

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Publication number
JP7597785B2
JP7597785B2 JP2022501790A JP2022501790A JP7597785B2 JP 7597785 B2 JP7597785 B2 JP 7597785B2 JP 2022501790 A JP2022501790 A JP 2022501790A JP 2022501790 A JP2022501790 A JP 2022501790A JP 7597785 B2 JP7597785 B2 JP 7597785B2
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JP
Japan
Prior art keywords
mos transistor
semiconductor integrated
integrated circuit
voltage
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022501790A
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English (en)
Japanese (ja)
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JPWO2021166679A5 (https=
JPWO2021166679A1 (https=
Inventor
信 安坂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
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Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of JPWO2021166679A1 publication Critical patent/JPWO2021166679A1/ja
Publication of JPWO2021166679A5 publication Critical patent/JPWO2021166679A5/ja
Application granted granted Critical
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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/041—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage using a short-circuiting device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/08—Shaping pulses by limiting; by thresholding; by slicing, i.e. combined limiting and thresholding
    • H03K5/082—Shaping pulses by limiting; by thresholding; by slicing, i.e. combined limiting and thresholding with an adaptive threshold
    • H03K5/084—Shaping pulses by limiting; by thresholding; by slicing, i.e. combined limiting and thresholding with an adaptive threshold modified by switching, e.g. by a periodic signal or by a signal in synchronism with the transitions of the output signal
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/56—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08142—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
JP2022501790A 2020-02-19 2021-02-05 クランプ回路 Active JP7597785B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020025829 2020-02-19
JP2020025829 2020-02-19
PCT/JP2021/004310 WO2021166679A1 (ja) 2020-02-19 2021-02-05 クランプ回路

Publications (3)

Publication Number Publication Date
JPWO2021166679A1 JPWO2021166679A1 (https=) 2021-08-26
JPWO2021166679A5 JPWO2021166679A5 (https=) 2022-10-13
JP7597785B2 true JP7597785B2 (ja) 2024-12-10

Family

ID=77390785

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022501790A Active JP7597785B2 (ja) 2020-02-19 2021-02-05 クランプ回路

Country Status (4)

Country Link
US (1) US12136921B2 (https=)
JP (1) JP7597785B2 (https=)
DE (1) DE112021001123T5 (https=)
WO (1) WO2021166679A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102023108746B4 (de) * 2023-04-05 2024-12-12 Infineon Technologies Ag Klemm-Schaltkreise
JP2025124470A (ja) * 2024-02-14 2025-08-26 ミネベアパワーデバイス株式会社 半導体装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013090278A (ja) 2011-10-21 2013-05-13 Toshiba Corp 出力回路

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5232374A (en) * 1975-09-08 1977-03-11 Citizen Watch Co Ltd Electronic watch
US4663584B1 (en) * 1985-06-10 1996-05-21 Toshiba Kk Intermediate potential generation circuit
US4918336A (en) * 1987-05-19 1990-04-17 Gazelle Microcircuits, Inc. Capacitor coupled push pull logic circuit
JP2809768B2 (ja) * 1989-11-30 1998-10-15 株式会社東芝 基準電位発生回路
JP3124781B2 (ja) * 1990-03-30 2001-01-15 富士通株式会社 半導体集積回路装置
JP3780030B2 (ja) * 1995-06-12 2006-05-31 株式会社ルネサステクノロジ 発振回路およびｄｒａｍ
JP3022815B2 (ja) * 1997-07-24 2000-03-21 日本電気アイシーマイコンシステム株式会社 中間電位生成回路
JP3031313B2 (ja) * 1997-09-11 2000-04-10 日本電気株式会社 半導体回路
KR100362700B1 (ko) * 2000-02-03 2002-11-27 삼성전자 주식회사 반도체 메모리 장치의 전압 레귤레이터 회로
US6512394B1 (en) * 2002-03-14 2003-01-28 United Memories, Inc. Technique for efficient logic power gating with data retention in integrated circuit devices
JP4761458B2 (ja) * 2006-03-27 2011-08-31 セイコーインスツル株式会社 カスコード回路および半導体装置
JP5593904B2 (ja) 2010-07-16 2014-09-24 株式会社リコー 電圧クランプ回路およびこれを用いた集積回路
JP5771489B2 (ja) * 2011-09-15 2015-09-02 ルネサスエレクトロニクス株式会社 半導体装置
US9767861B2 (en) * 2015-07-28 2017-09-19 Synopsys, Inc. Regulated voltage supply with low power consumption and small chip area

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013090278A (ja) 2011-10-21 2013-05-13 Toshiba Corp 出力回路

Also Published As

Publication number Publication date
US12136921B2 (en) 2024-11-05
WO2021166679A1 (ja) 2021-08-26
DE112021001123T5 (de) 2022-12-22
US20230140757A1 (en) 2023-05-04
JPWO2021166679A1 (https=) 2021-08-26

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