JP7597081B2 - 電子デバイス用基板及びその製造方法 - Google Patents
電子デバイス用基板及びその製造方法 Download PDFInfo
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- JP7597081B2 JP7597081B2 JP2022097956A JP2022097956A JP7597081B2 JP 7597081 B2 JP7597081 B2 JP 7597081B2 JP 2022097956 A JP2022097956 A JP 2022097956A JP 2022097956 A JP2022097956 A JP 2022097956A JP 7597081 B2 JP7597081 B2 JP 7597081B2
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- 239000000758 substrate Substances 0.000 title claims description 296
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000013078 crystal Substances 0.000 claims description 212
- 229910052710 silicon Inorganic materials 0.000 claims description 179
- 239000010703 silicon Substances 0.000 claims description 179
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 170
- 150000004767 nitrides Chemical class 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 31
- 238000010438 heat treatment Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 13
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 238000003776 cleavage reaction Methods 0.000 description 14
- 230000007017 scission Effects 0.000 description 14
- 238000005336 cracking Methods 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 238000005452 bending Methods 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000008719 thickening Effects 0.000 description 2
- -1 and traditionally Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP22901010.3A EP4442870A1 (en) | 2021-12-01 | 2022-10-31 | Substrate for electronic device and production method therefor |
| KR1020247018471A KR20240117553A (ko) | 2021-12-01 | 2022-10-31 | 전자디바이스용 기판 및 그의 제조방법 |
| PCT/JP2022/040820 WO2023100577A1 (ja) | 2021-12-01 | 2022-10-31 | 電子デバイス用基板及びその製造方法 |
| CN202280079606.1A CN118414455A (zh) | 2021-12-01 | 2022-10-31 | 电子器件用基板及其制造方法 |
| US18/715,417 US20250031421A1 (en) | 2021-12-01 | 2022-10-31 | Substrate for electronic device and method for producing the same |
| TW111141769A TW202340552A (zh) | 2021-12-01 | 2022-11-02 | 電子元件用基板及其製造方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021195583 | 2021-12-01 | ||
| JP2021195583 | 2021-12-01 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2023081820A JP2023081820A (ja) | 2023-06-13 |
| JP2023081820A5 JP2023081820A5 (https=) | 2024-06-05 |
| JP7597081B2 true JP7597081B2 (ja) | 2024-12-10 |
Family
ID=86728127
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022097956A Active JP7597081B2 (ja) | 2021-12-01 | 2022-06-17 | 電子デバイス用基板及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP7597081B2 (https=) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017507478A (ja) | 2014-01-07 | 2017-03-16 | 蘇州晶湛半導体有限公司Ｅｎｋｒｉｓ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ，Ｉｎｃ． | 半導体基板、半導体デバイス、および半導体基板の製造方法 |
| JP2021027186A (ja) | 2019-08-06 | 2021-02-22 | 信越半導体株式会社 | 電子デバイス用基板およびその製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63193517A (ja) * | 1987-02-06 | 1988-08-10 | Nec Corp | 複合単結晶基板 |
| JPH07335511A (ja) * | 1994-06-13 | 1995-12-22 | Nippon Telegr & Teleph Corp <Ntt> | 張り合わせウエハ |
-
2022
- 2022-06-17 JP JP2022097956A patent/JP7597081B2/ja active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017507478A (ja) | 2014-01-07 | 2017-03-16 | 蘇州晶湛半導体有限公司Ｅｎｋｒｉｓ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ，Ｉｎｃ． | 半導体基板、半導体デバイス、および半導体基板の製造方法 |
| JP2021027186A (ja) | 2019-08-06 | 2021-02-22 | 信越半導体株式会社 | 電子デバイス用基板およびその製造方法 |
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| Publication number | Publication date |
|---|---|
| JP2023081820A (ja) | 2023-06-13 |
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