JP7592881B2 - アモルファス基板上の窒化ガリウム系半導体デバイス - Google Patents

アモルファス基板上の窒化ガリウム系半導体デバイス Download PDF

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Publication number
JP7592881B2
JP7592881B2 JP2023545181A JP2023545181A JP7592881B2 JP 7592881 B2 JP7592881 B2 JP 7592881B2 JP 2023545181 A JP2023545181 A JP 2023545181A JP 2023545181 A JP2023545181 A JP 2023545181A JP 7592881 B2 JP7592881 B2 JP 7592881B2
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layer
gallium nitride
conductive
auxiliary electrode
nitride based
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Japanese (ja)
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JPWO2023032583A1 (https=
Inventor
拓海 金城
眞澄 西村
逸 青木
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Japan Display Inc
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Japan Display Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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JP2023545181A 2021-09-03 2022-08-04 アモルファス基板上の窒化ガリウム系半導体デバイス Active JP7592881B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021144296 2021-09-03
JP2021144296 2021-09-03
PCT/JP2022/029875 WO2023032583A1 (ja) 2021-09-03 2022-08-04 アモルファス基板上の窒化ガリウム系半導体デバイス

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JPWO2023032583A1 JPWO2023032583A1 (https=) 2023-03-09
JP7592881B2 true JP7592881B2 (ja) 2024-12-02

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JP2023545181A Active JP7592881B2 (ja) 2021-09-03 2022-08-04 アモルファス基板上の窒化ガリウム系半導体デバイス

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US (1) US20240250214A1 (https=)
JP (1) JP7592881B2 (https=)
CN (1) CN117836959A (https=)
WO (1) WO2023032583A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025033154A1 (ja) * 2023-08-07 2025-02-13 株式会社ジャパンディスプレイ 窒化物半導体デバイスの製造方法および窒化物半導体デバイス

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020125821A1 (en) 2001-03-12 2002-09-12 University Of Cincinnati Electroluminescent display formed on glass with a thick film dielectric layer
JP2006310527A (ja) 2005-04-28 2006-11-09 Institute Of National Colleges Of Technology Japan アモルファス材料基板を用いた発光素子及びその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710280A (en) * 1980-06-23 1982-01-19 Futaba Corp Gan light emitting element
JPH08139361A (ja) * 1994-11-08 1996-05-31 Toshiba Corp 化合物半導体発光素子
JPH0936427A (ja) * 1995-07-18 1997-02-07 Showa Denko Kk 半導体装置及びその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020125821A1 (en) 2001-03-12 2002-09-12 University Of Cincinnati Electroluminescent display formed on glass with a thick film dielectric layer
JP2006310527A (ja) 2005-04-28 2006-11-09 Institute Of National Colleges Of Technology Japan アモルファス材料基板を用いた発光素子及びその製造方法

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Publication number Publication date
CN117836959A (zh) 2024-04-05
WO2023032583A1 (ja) 2023-03-09
JPWO2023032583A1 (https=) 2023-03-09
US20240250214A1 (en) 2024-07-25

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