CN117836959A - 无定形基板上的氮化镓系半导体器件 - Google Patents

无定形基板上的氮化镓系半导体器件 Download PDF

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Publication number
CN117836959A
CN117836959A CN202280057169.3A CN202280057169A CN117836959A CN 117836959 A CN117836959 A CN 117836959A CN 202280057169 A CN202280057169 A CN 202280057169A CN 117836959 A CN117836959 A CN 117836959A
Authority
CN
China
Prior art keywords
gallium nitride
layer
conductive alignment
auxiliary electrode
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280057169.3A
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English (en)
Chinese (zh)
Inventor
金城拓海
西村真澄
青木逸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Display Inc
Original Assignee
Japan Display Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Display Inc filed Critical Japan Display Inc
Publication of CN117836959A publication Critical patent/CN117836959A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Landscapes

  • Led Devices (AREA)
CN202280057169.3A 2021-09-03 2022-08-04 无定形基板上的氮化镓系半导体器件 Pending CN117836959A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-144296 2021-09-03
JP2021144296 2021-09-03
PCT/JP2022/029875 WO2023032583A1 (ja) 2021-09-03 2022-08-04 アモルファス基板上の窒化ガリウム系半導体デバイス

Publications (1)

Publication Number Publication Date
CN117836959A true CN117836959A (zh) 2024-04-05

Family

ID=85410974

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280057169.3A Pending CN117836959A (zh) 2021-09-03 2022-08-04 无定形基板上的氮化镓系半导体器件

Country Status (4)

Country Link
US (1) US20240250214A1 (https=)
JP (1) JP7592881B2 (https=)
CN (1) CN117836959A (https=)
WO (1) WO2023032583A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025033154A1 (ja) * 2023-08-07 2025-02-13 株式会社ジャパンディスプレイ 窒化物半導体デバイスの製造方法および窒化物半導体デバイス

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710280A (en) * 1980-06-23 1982-01-19 Futaba Corp Gan light emitting element
JPH08139361A (ja) * 1994-11-08 1996-05-31 Toshiba Corp 化合物半導体発光素子
JPH0936427A (ja) * 1995-07-18 1997-02-07 Showa Denko Kk 半導体装置及びその製造方法
US20020125821A1 (en) * 2001-03-12 2002-09-12 University Of Cincinnati Electroluminescent display formed on glass with a thick film dielectric layer
JP4590497B2 (ja) * 2005-04-28 2010-12-01 独立行政法人国立高等専門学校機構 アモルファス材料基板を用いた発光素子及びその製造方法

Also Published As

Publication number Publication date
WO2023032583A1 (ja) 2023-03-09
JPWO2023032583A1 (https=) 2023-03-09
JP7592881B2 (ja) 2024-12-02
US20240250214A1 (en) 2024-07-25

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