JP7583046B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7583046B2
JP7583046B2 JP2022535980A JP2022535980A JP7583046B2 JP 7583046 B2 JP7583046 B2 JP 7583046B2 JP 2022535980 A JP2022535980 A JP 2022535980A JP 2022535980 A JP2022535980 A JP 2022535980A JP 7583046 B2 JP7583046 B2 JP 7583046B2
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Japan
Prior art keywords
circuit
transistor
insulator
conductor
oxide
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Japanese (ja)
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JPWO2022013677A1 (https=
JPWO2022013677A5 (https=
Inventor
佑樹 岡本
港 伊藤
宗広 上妻
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JPWO2022013677A1 publication Critical patent/JPWO2022013677A1/ja
Publication of JPWO2022013677A5 publication Critical patent/JPWO2022013677A5/ja
Priority to JP2024192009A priority Critical patent/JP7723821B2/ja
Application granted granted Critical
Publication of JP7583046B2 publication Critical patent/JP7583046B2/ja
Priority to JP2025129610A priority patent/JP2025169289A/ja
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F7/00—Methods or arrangements for processing data by operating upon the order or content of the data handled
    • G06F7/38—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation
    • G06F7/48—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state device; using unspecified devices
    • G06F7/57—Arithmetic logic units [ALU], i.e. arrangements or devices for performing two or more of the operations covered by groups G06F7/483 – G06F7/556 or for performing logical operations
    • G06F7/575—Basic arithmetic logic units, i.e. devices selectable to perform either addition, subtraction or one of several logical operations, using, at least partially, the same circuitry
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F7/00—Methods or arrangements for processing data by operating upon the order or content of the data handled
    • G06F7/38—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation
    • G06F7/48—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state device; using unspecified devices
    • G06F7/544—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state device; using unspecified devices for evaluating functions by calculation
    • G06F7/5443—Sum of products
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
    • G06F17/10—Complex mathematical operations
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F7/00—Methods or arrangements for processing data by operating upon the order or content of the data handled
    • G06F7/38—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation
    • G06F7/48—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state device; using unspecified devices
    • G06F7/52—Multiplying; Dividing
    • G06F7/523—Multiplying only
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06G—ANALOGUE COMPUTERS
    • G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
    • G06G7/48—Analogue computers for specific processes, systems or devices, e.g. simulators
    • G06G7/60—Analogue computers for specific processes, systems or devices, e.g. simulators for living beings, e.g. their nervous systems ; for problems in the medical field
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/54—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Computational Mathematics (AREA)
  • Mathematical Analysis (AREA)
  • Mathematical Optimization (AREA)
  • Pure & Applied Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Computing Systems (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Biomedical Technology (AREA)
  • Health & Medical Sciences (AREA)
  • Mathematical Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Data Mining & Analysis (AREA)
  • General Health & Medical Sciences (AREA)
  • Neurology (AREA)
  • Biophysics (AREA)
  • Molecular Biology (AREA)
  • Software Systems (AREA)
  • Computational Linguistics (AREA)
  • Evolutionary Computation (AREA)
  • Artificial Intelligence (AREA)
  • Databases & Information Systems (AREA)
  • Physiology (AREA)
  • Neurosurgery (AREA)
  • Algebra (AREA)
  • Semiconductor Memories (AREA)
  • Memory System (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Complex Calculations (AREA)
  • Non-Volatile Memory (AREA)
JP2022535980A 2020-07-17 2021-07-05 半導体装置 Active JP7583046B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2024192009A JP7723821B2 (ja) 2020-07-17 2024-10-31 半導体装置
JP2025129610A JP2025169289A (ja) 2020-07-17 2025-08-01 半導体装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2020122483 2020-07-17
JP2020122483 2020-07-17
JP2020200722 2020-12-03
JP2020200722 2020-12-03
PCT/IB2021/055989 WO2022013677A1 (ja) 2020-07-17 2021-07-05 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024192009A Division JP7723821B2 (ja) 2020-07-17 2024-10-31 半導体装置

Publications (3)

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JPWO2022013677A1 JPWO2022013677A1 (https=) 2022-01-20
JPWO2022013677A5 JPWO2022013677A5 (https=) 2024-06-27
JP7583046B2 true JP7583046B2 (ja) 2024-11-13

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JP2022535980A Active JP7583046B2 (ja) 2020-07-17 2021-07-05 半導体装置
JP2024192009A Active JP7723821B2 (ja) 2020-07-17 2024-10-31 半導体装置
JP2025129610A Pending JP2025169289A (ja) 2020-07-17 2025-08-01 半導体装置

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JP2024192009A Active JP7723821B2 (ja) 2020-07-17 2024-10-31 半導体装置
JP2025129610A Pending JP2025169289A (ja) 2020-07-17 2025-08-01 半導体装置

Country Status (5)

Country Link
US (1) US20230297339A1 (https=)
JP (3) JP7583046B2 (https=)
KR (1) KR20230038731A (https=)
CN (1) CN115735208A (https=)
WO (1) WO2022013677A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017228295A (ja) 2016-06-20 2017-12-28 東芝メモリ株式会社 演算装置
JP2019046375A (ja) 2017-09-06 2019-03-22 株式会社半導体エネルギー研究所 半導体装置、電子部品、及び電子機器
JP2020057306A (ja) 2018-10-04 2020-04-09 富士通株式会社 最適化装置及び最適化装置の制御方法
JP2020068048A (ja) 2018-10-18 2020-04-30 株式会社デンソー 人工ニューラルネットワーク回路及び人工ニューラルネットワーク回路における学習値切替方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6623947B2 (ja) 2016-06-17 2019-12-25 富士通株式会社 情報処理装置、イジング装置及び情報処理装置の制御方法
US20190122104A1 (en) 2017-10-19 2019-04-25 General Electric Company Building a binary neural network architecture

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017228295A (ja) 2016-06-20 2017-12-28 東芝メモリ株式会社 演算装置
JP2019046375A (ja) 2017-09-06 2019-03-22 株式会社半導体エネルギー研究所 半導体装置、電子部品、及び電子機器
JP2020057306A (ja) 2018-10-04 2020-04-09 富士通株式会社 最適化装置及び最適化装置の制御方法
JP2020068048A (ja) 2018-10-18 2020-04-30 株式会社デンソー 人工ニューラルネットワーク回路及び人工ニューラルネットワーク回路における学習値切替方法

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Publication number Publication date
JPWO2022013677A1 (https=) 2022-01-20
JP2025169289A (ja) 2025-11-12
CN115735208A (zh) 2023-03-03
JP2025013424A (ja) 2025-01-24
US20230297339A1 (en) 2023-09-21
WO2022013677A1 (ja) 2022-01-20
JP7723821B2 (ja) 2025-08-14
KR20230038731A (ko) 2023-03-21

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