JP7582596B2 - カウンター回路、及びそれを含むイメージセンサ - Google Patents

カウンター回路、及びそれを含むイメージセンサ Download PDF

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Publication number
JP7582596B2
JP7582596B2 JP2020169542A JP2020169542A JP7582596B2 JP 7582596 B2 JP7582596 B2 JP 7582596B2 JP 2020169542 A JP2020169542 A JP 2020169542A JP 2020169542 A JP2020169542 A JP 2020169542A JP 7582596 B2 JP7582596 B2 JP 7582596B2
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Japan
Prior art keywords
signal
complement
control signal
inverted
counting
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JP2020169542A
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English (en)
Japanese (ja)
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JP2021069112A (ja
JP2021069112A5 (enExample
Inventor
磁賢 具
赫賢 李
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication of JP2021069112A5 publication Critical patent/JP2021069112A5/ja
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12—Analogue/digital converters
    • H03M1/14—Conversion in steps with each step involving the same or a different conversion means and delivering more than one bit
    • H03M1/16—Conversion in steps with each step involving the same or a different conversion means and delivering more than one bit with scale factor modification, i.e. by changing the amplification between the steps
    • H03M1/162—Conversion in steps with each step involving the same or a different conversion means and delivering more than one bit with scale factor modification, i.e. by changing the amplification between the steps the steps being performed sequentially in a single stage, i.e. recirculation type
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/745—Circuitry for generating timing or clock signals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12—Analogue/digital converters
    • H03M1/1205—Multiplexed conversion systems
    • H03M1/123—Simultaneous, i.e. using one converter per channel but with common control or reference circuits for multiple converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12—Analogue/digital converters
    • H03M1/124—Sampling or signal conditioning arrangements specially adapted for A/D converters
    • H03M1/129—Means for adapting the input signal to the range the converter can handle, e.g. limiting, pre-scaling ; Out-of-range indication
    • H03M1/1295—Clamping, i.e. adjusting the DC level of the input signal to a predetermined value
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12—Analogue/digital converters
    • H03M1/50—Analogue/digital converters with intermediate conversion to time interval
    • H03M1/56—Input signal compared with linear ramp
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/618—Noise processing, e.g. detecting, correcting, reducing or removing noise for random or high-frequency noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/7795—Circuitry for generating timing or clock signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Theoretical Computer Science (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2020169542A 2019-10-18 2020-10-07 カウンター回路、及びそれを含むイメージセンサ Active JP7582596B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2019-0129942 2019-10-18
KR1020190129942A KR102946263B1 (ko) 2019-10-18 2019-10-18 카운터 회로 및 그것을 포함하는 이미지 센서
US16/908,980 2020-06-23
US16/908,980 US11451731B2 (en) 2019-10-18 2020-06-23 Counter circuit and image sensor including the same

Publications (3)

Publication Number Publication Date
JP2021069112A JP2021069112A (ja) 2021-04-30
JP2021069112A5 JP2021069112A5 (enExample) 2023-09-20
JP7582596B2 true JP7582596B2 (ja) 2024-11-13

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020169542A Active JP7582596B2 (ja) 2019-10-18 2020-10-07 カウンター回路、及びそれを含むイメージセンサ

Country Status (4)

Country Link
US (1) US11451731B2 (enExample)
EP (1) EP3962070B1 (enExample)
JP (1) JP7582596B2 (enExample)
KR (1) KR102946263B1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024259802A1 (zh) * 2023-06-19 2024-12-26 思特威(上海)电子科技股份有限公司 图像传感器及其读出电路
TW202510513A (zh) * 2023-08-28 2025-03-01 南韓商三星電子股份有限公司 雙向計數器和產生輸出資料的方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009089066A (ja) 2007-09-28 2009-04-23 Sony Corp Ａ／ｄ変換回路、固体撮像素子、およびカメラシステム
US20100207798A1 (en) 2009-02-13 2010-08-19 Samsung Electronics Co., Ltd. Double data rate (DDR) counter, analog-to-digital converter (ADC) using the same, CMOS image sensor using the same and methods in DDR counter, ADC and CMOS image sensor
JP2011023887A (ja) 2009-07-14 2011-02-03 Toshiba Corp Ａ／ｄ変換器及びそれを備えた固体撮像装置

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
US3872466A (en) * 1973-07-19 1975-03-18 Analog Devices Inc Integrating analog-to-digital converter having digitally-derived offset error compensation and bipolar operation without zero discontinuity
KR101365408B1 (ko) 2009-03-03 2014-02-19 삼성전자주식회사 카운터 회로, 이를 포함하는 물리량 측정 장치 및 카운팅 방법
KR101647366B1 (ko) * 2009-09-25 2016-08-11 삼성전자주식회사 카운터 회로, 이를 포함하는 장치 및 카운팅 방법
US8586903B2 (en) 2009-11-23 2013-11-19 Samsung Electronics Co., Ltd. Counter circuits, analog to digital converters, image sensors and digital imaging systems including the same
US8969770B2 (en) 2011-05-02 2015-03-03 Semiconductor Components Industries, Llc Correlated double sampling to include a controller to increment and invert a count during a first period and a second period
US8576979B2 (en) 2011-10-11 2013-11-05 Omnivision Technologies, Inc. Arithmetic counter circuit, configuration and application for high performance CMOS image sensors
JP6019793B2 (ja) 2012-06-20 2016-11-02 ソニー株式会社 カウンタ、カウント方法、ａｄ変換装置、固体撮像素子、および電子装置
KR102135684B1 (ko) 2013-07-24 2020-07-20 삼성전자주식회사 카운터 회로, 이를 포함하는 아날로그-디지털 컨버터, 이미지 센서 및 이를 이용하는 상관 이중 샘플링 방법
KR102082288B1 (ko) 2013-12-12 2020-02-27 에스케이하이닉스 주식회사 이중 데이터 레이트 카운터 및 그를 이용한 아날로그-디지털 변환 장치와 씨모스 이미지 센서
US9960783B2 (en) 2015-09-18 2018-05-01 Taiwan Semiconductor Manufacturing Company Ltd. Conditional correlated multiple sampling single slope analog-to-digital converter, and associated image sensor system and method
US9774333B2 (en) 2015-10-14 2017-09-26 Stmicroelectronics (Grenoble 2) Sas Counter circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009089066A (ja) 2007-09-28 2009-04-23 Sony Corp Ａ／ｄ変換回路、固体撮像素子、およびカメラシステム
US20100207798A1 (en) 2009-02-13 2010-08-19 Samsung Electronics Co., Ltd. Double data rate (DDR) counter, analog-to-digital converter (ADC) using the same, CMOS image sensor using the same and methods in DDR counter, ADC and CMOS image sensor
JP2011023887A (ja) 2009-07-14 2011-02-03 Toshiba Corp Ａ／ｄ変換器及びそれを備えた固体撮像装置

Also Published As

Publication number Publication date
US20210120201A1 (en) 2021-04-22
EP3962070B1 (en) 2024-05-15
JP2021069112A (ja) 2021-04-30
EP3962070A1 (en) 2022-03-02
KR102946263B1 (ko) 2026-04-01
KR20210046897A (ko) 2021-04-29
US11451731B2 (en) 2022-09-20

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