JP7575309B2 - 膜厚測定方法、ノッチ部の検出方法、および研磨装置 - Google Patents

膜厚測定方法、ノッチ部の検出方法、および研磨装置 Download PDF

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Publication number
JP7575309B2
JP7575309B2 JP2021043328A JP2021043328A JP7575309B2 JP 7575309 B2 JP7575309 B2 JP 7575309B2 JP 2021043328 A JP2021043328 A JP 2021043328A JP 2021043328 A JP2021043328 A JP 2021043328A JP 7575309 B2 JP7575309 B2 JP 7575309B2
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Japan
Prior art keywords
film thickness
polishing
substrate
polishing head
head
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JP2021043328A
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English (en)
Japanese (ja)
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JP2022143015A (ja
JP2022143015A5 (https=
Inventor
治 鍋谷
真吾 富樫
計介 並木
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Ebara Corp
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Ebara Corp
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Priority to JP2021043328A priority Critical patent/JP7575309B2/ja
Priority to US17/694,125 priority patent/US12183642B2/en
Publication of JP2022143015A publication Critical patent/JP2022143015A/ja
Publication of JP2022143015A5 publication Critical patent/JP2022143015A5/ja
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0472—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
JP2021043328A 2021-03-17 2021-03-17 膜厚測定方法、ノッチ部の検出方法、および研磨装置 Active JP7575309B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2021043328A JP7575309B2 (ja) 2021-03-17 2021-03-17 膜厚測定方法、ノッチ部の検出方法、および研磨装置
US17/694,125 US12183642B2 (en) 2021-03-17 2022-03-14 Film-thickness measuring method, method of detecting notch portion, and polishing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021043328A JP7575309B2 (ja) 2021-03-17 2021-03-17 膜厚測定方法、ノッチ部の検出方法、および研磨装置

Publications (3)

Publication Number Publication Date
JP2022143015A JP2022143015A (ja) 2022-10-03
JP2022143015A5 JP2022143015A5 (https=) 2023-10-24
JP7575309B2 true JP7575309B2 (ja) 2024-10-29

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JP2021043328A Active JP7575309B2 (ja) 2021-03-17 2021-03-17 膜厚測定方法、ノッチ部の検出方法、および研磨装置

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US (1) US12183642B2 (https=)
JP (1) JP7575309B2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7425411B2 (ja) * 2020-10-12 2024-01-31 株式会社Sumco キャリア測定装置、キャリア測定方法、及びキャリア管理方法
US20220395956A1 (en) * 2021-06-15 2022-12-15 Axus Technology, Llc Method and apparatus for in-situ monitoring of chemical mechanical planarization (cmp) processes
US20250108474A1 (en) * 2023-09-29 2025-04-03 Applied Materials, Inc. Finding substrate notch on substrate between platens in chemical mechanical polishing

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003168663A (ja) 2001-12-03 2003-06-13 Sumitomo Mitsubishi Silicon Corp ワックスレスマウント式研磨方法およびその装置
US20120164917A1 (en) 2010-12-27 2012-06-28 Itsuki Kobata Polishing apparatus and polishing method
JP2015020242A (ja) 2013-07-19 2015-02-02 株式会社荏原製作所 研磨装置および研磨状態監視方法
JP2018183820A (ja) 2017-04-24 2018-11-22 株式会社荏原製作所 基板の研磨装置
US20190134774A1 (en) 2017-11-06 2019-05-09 Ebara Corporation Polishing method and polishing apparatus

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4159558B2 (ja) 1995-10-09 2008-10-01 株式会社荏原製作所 ポリッシング装置
JPH1076464A (ja) * 1996-08-30 1998-03-24 Canon Inc 研磨方法及びそれを用いた研磨装置
TWI393209B (zh) * 2003-02-10 2013-04-11 荏原製作所股份有限公司 研磨基板之方法
TWI675721B (zh) * 2013-07-11 2019-11-01 日商荏原製作所股份有限公司 研磨裝置及研磨狀態監視方法
JP6266493B2 (ja) 2014-03-20 2018-01-24 株式会社荏原製作所 研磨装置及び研磨方法
JP2015217445A (ja) 2014-05-14 2015-12-07 株式会社荏原製作所 研磨装置
JP6795337B2 (ja) * 2016-06-29 2020-12-02 株式会社荏原製作所 膜厚信号処理装置、研磨装置、膜厚信号処理方法、及び、研磨方法
JP7178259B2 (ja) 2018-12-27 2022-11-25 株式会社荏原製作所 研磨装置および研磨方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003168663A (ja) 2001-12-03 2003-06-13 Sumitomo Mitsubishi Silicon Corp ワックスレスマウント式研磨方法およびその装置
US20120164917A1 (en) 2010-12-27 2012-06-28 Itsuki Kobata Polishing apparatus and polishing method
JP2012138442A (ja) 2010-12-27 2012-07-19 Ebara Corp ポリッシング装置およびポリッシング方法
JP2015020242A (ja) 2013-07-19 2015-02-02 株式会社荏原製作所 研磨装置および研磨状態監視方法
JP2018183820A (ja) 2017-04-24 2018-11-22 株式会社荏原製作所 基板の研磨装置
US20200130131A1 (en) 2017-04-24 2020-04-30 Ebara Corporation Polishing apparatus of substrate
US20190134774A1 (en) 2017-11-06 2019-05-09 Ebara Corporation Polishing method and polishing apparatus
JP2019084614A (ja) 2017-11-06 2019-06-06 株式会社荏原製作所 研磨方法および研磨装置

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Publication number Publication date
JP2022143015A (ja) 2022-10-03
US12183642B2 (en) 2024-12-31
US20220344221A1 (en) 2022-10-27

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